Sub 50 nm nano-patterns with carbon based spin-on organic hardmask.
J Nanosci Nanotechnol
; 12(4): 3364-8, 2012 Apr.
Article
en En
| MEDLINE
| ID: mdl-22849125
Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was compared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si3N4 layer. However, such a nano-structure was able to be formed by etching the Si3N4 layer using C-SOH as an etch mask.
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01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
J Nanosci Nanotechnol
Año:
2012
Tipo del documento:
Article
Pais de publicación:
Estados Unidos