Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures.
Opt Lett
; 37(12): 2205-7, 2012 Jun 15.
Article
en En
| MEDLINE
| ID: mdl-22739856
The effect of using chirped multiple quantum-well (MQW) structures in InGaN green light-emitting diodes (LEDs) is numerically investigated. An active structure, which is with both thick QWs with low indium composition on the p-side and thin QWs with high indium composition next to the n-region, is presented in this study. The thickness and indium composition in each single QW is specifically tuned to emit the same green emission spectrum. Comparing with conventional active structure design of green LEDs, which is using uniform MQWs, the output power is increased by 27% at 20 mA, and by 15% at 100 mA current injections. This improvement is mainly attributed to the enhanced efficiency of carrier injection into QWs and the improved capability of carrier transport.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
Opt Lett
Año:
2012
Tipo del documento:
Article
País de afiliación:
Taiwán
Pais de publicación:
Estados Unidos