Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure.
Opt Express
; 20(7): 7035-9, 2012 Mar 26.
Article
en En
| MEDLINE
| ID: mdl-22453383
Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 W and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Procesamiento de Señales Asistido por Computador
/
Láseres de Semiconductores
/
Galio
/
Indio
Idioma:
En
Revista:
Opt Express
Asunto de la revista:
OFTALMOLOGIA
Año:
2012
Tipo del documento:
Article
Pais de publicación:
Estados Unidos