Imaging Schottky barriers and ohmic contacts in PbS quantum dot devices.
Nano Lett
; 12(2): 569-75, 2012 Feb 08.
Article
en En
| MEDLINE
| ID: mdl-22250976
We fabricated planar PbS quantum dot devices with ohmic and Schottky type electrodes and characterized them using scanning photocurrent and photovoltage microscopies. The microscopy techniques used in this investigation allow for interrogation of the lateral depletion width and related photovoltaic properties in the planar Schottky type contacts. Titanium/QD contacts exhibited depletion widths that varied over a wide range as a function of bias voltage, while the gold/QD contacts showed ohmic behavior over the same voltage range.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Sulfuros
/
Transistores Electrónicos
/
Nanotecnología
/
Puntos Cuánticos
/
Plomo
Idioma:
En
Revista:
Nano Lett
Año:
2012
Tipo del documento:
Article
País de afiliación:
Estados Unidos
Pais de publicación:
Estados Unidos