Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.

Skiba-Szymanska, Joanna; Jamil, Ayesha; Farrer, Ian; Ward, Martin B; Nicoll, Christine A; Ellis, David J P; Griffiths, Jonathan P; Anderson, David; Jones, Geb A C; Ritchie, David A; Shields, Andrew J

Skiba-Szymanska, Joanna; Jamil, Ayesha; Farrer, Ian; Ward, Martin B; Nicoll, Christine A; Ellis, David J P; Griffiths, Jonathan P; Anderson, David; Jones, Geb A C; Ritchie, David A; Shields, Andrew J.

Afiliación

Skiba-Szymanska J; Toshiba Research Europe Ltd, Cambridge Research Laboratory, Cambridge, UK. joanna.skiba@crl.toshiba.co.uk

Nanotechnology ; 22(6): 065302, 2011 Feb 11.

Article en En | MEDLINE | ID: mdl-21212488

RESUMEN

We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2011 Tipo del documento: Article Pais de publicación: Reino Unido

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