Generic nano-imprint process for fabrication of nanowire arrays.

Pierret, Aurélie; Hocevar, Moïra; Diedenhofen, Silke L; Algra, Rienk E; Vlieg, E; Timmering, Eugene C; Verschuuren, Marc A; Immink, George W G; Verheijen, Marcel A; Bakkers, Erik P A M

Pierret, Aurélie; Hocevar, Moïra; Diedenhofen, Silke L; Algra, Rienk E; Vlieg, E; Timmering, Eugene C; Verschuuren, Marc A; Immink, George W G; Verheijen, Marcel A; Bakkers, Erik P A M.

Afiliación

Pierret A; Philips Research Laboratories Eindhoven, High Tech Campus 11, AE Eindhoven, The Netherlands.

Nanotechnology ; 21(6): 065305, 2010 Feb 10.

Article en En | MEDLINE | ID: mdl-20057022

RESUMEN

A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 degrees C for InP and 700 degrees C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2010 Tipo del documento: Article País de afiliación: Países Bajos Pais de publicación: Reino Unido

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