Phosphorus doped Zn(1-x)Mg(x)O nanowire arrays.

Lin, S S; Hong, J I; Song, J H; Zhu, Y; He, H P; Xu, Z; Wei, Y G; Ding, Y; Snyder, R L; Wang, Z L

Lin, S S; Hong, J I; Song, J H; Zhu, Y; He, H P; Xu, Z; Wei, Y G; Ding, Y; Snyder, R L; Wang, Z L.

Afiliación

Lin SS; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.

Nano Lett ; 9(11): 3877-82, 2009 Nov.

Article en En | MEDLINE | ID: mdl-19757858

RESUMEN

We demonstrate the growth of phosphorus doped Zn(1-x)Mg(x)O nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn(0.92)Mg(0.08)O:P NWs are likely obtained in reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of approximately 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2009 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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