Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures with hard x-ray photoelectron spectroscopy.

Sing, M; Berner, G; Goss, K; Müller, A; Ruff, A; Wetscherek, A; Thiel, S; Mannhart, J; Pauli, S A; Schneider, C W; Willmott, P R; Gorgoi, M; Schäfers, F; Claessen, R

Sing, M; Berner, G; Goss, K; Müller, A; Ruff, A; Wetscherek, A; Thiel, S; Mannhart, J; Pauli, S A; Schneider, C W; Willmott, P R; Gorgoi, M; Schäfers, F; Claessen, R.

Afiliación

Sing M; Experimentelle Physik 4, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany.

Phys Rev Lett ; 102(17): 176805, 2009 May 01.

Article en En | MEDLINE | ID: mdl-19518810

RESUMEN

The conducting interface of LaAlO3/SrTiO3 heterostructures has been studied by hard x-ray photoelectron spectroscopy. From the Ti 2p signal and its angle dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO3 overlayers. Our results point to an electronic reconstruction in the LaAlO3 overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.

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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2009 Tipo del documento: Article País de afiliación: Alemania Pais de publicación: Estados Unidos

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