Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor.
Phys Rev Lett
; 102(3): 036601, 2009 Jan 23.
Article
en En
| MEDLINE
| ID: mdl-19257375
We report on spin injection experiments at a Co/Al2O3/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop DeltaV at the interface as high as 1.2 mV for a current density of 0.34 nA.microm(-2). This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al2O3/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers traveling back into the ferromagnetic contact reproduces accurately the experimental results.
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Colección:
01-internacional
Base de datos:
MEDLINE
Tipo de estudio:
Prognostic_studies
Idioma:
En
Revista:
Phys Rev Lett
Año:
2009
Tipo del documento:
Article
País de afiliación:
Francia
Pais de publicación:
Estados Unidos