Room-temperature polariton lasing in semiconductor microcavities.

Christopoulos, S; von Högersthal, G Baldassarri Höger; Grundy, A J D; Lagoudakis, P G; Kavokin, A V; Baumberg, J J; Christmann, G; Butté, R; Feltin, E; Carlin, J-F; Grandjean, N

Christopoulos, S; von Högersthal, G Baldassarri Höger; Grundy, A J D; Lagoudakis, P G; Kavokin, A V; Baumberg, J J; Christmann, G; Butté, R; Feltin, E; Carlin, J-F; Grandjean, N.

Afiliación

Christopoulos S; School of Physics and Astronomy, University of Southampton, Highfield, Southampton, SO17 1BJ, UK.

Phys Rev Lett ; 98(12): 126405, 2007 Mar 23.

Article en En | MEDLINE | ID: mdl-17501142

RESUMEN

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 microJ cm-2, 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/-5 degrees and spatial size around 5 microm.

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Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2007 Tipo del documento: Article Pais de publicación: Estados Unidos

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PubMed Links

Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2007 Tipo del documento: Article Pais de publicación: Estados Unidos