Experimental study of single-electron phenomena in silicon nanocrystal memories.
J Nanosci Nanotechnol
; 7(1): 322-8, 2007 Jan.
Article
en En
| MEDLINE
| ID: mdl-17455498
In this paper we present experimental evidence for single-electron phenomena in solid-state memories based on silicon nanocrystals as storage elements. The stepwise evolution of the channel current of a written memory cell biased in the subthreshold regime is monitored by means of a purposely designed low noise acquisition system with a bandwidth of 1 kHz. Each channel current step-up is ascribed to a single-electron emission from the silicon nanocrystal to the silicon substrate and each current step-down is ascribed to a single-electron capture from the silicon substrate into the silicon nanocrystal. The effect of the measurement system bandwidth on the detection of single-electron events is discussed and a procedure for extracting the threshold voltage shift associated to these events is proposed. It is shown that single-electron charging and discharging events in a memory cell with an area of 4.5 x 10(-10) cm2 can cause threshold voltage shift at room-temperature of the order of several millivolts. Qualitative explanation for the observed threshold voltage shift distribution is given.
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Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Silicio
/
Equipos de Almacenamiento de Computador
/
Nanotecnología
/
Nanopartículas
Tipo de estudio:
Qualitative_research
Idioma:
En
Revista:
J Nanosci Nanotechnol
Año:
2007
Tipo del documento:
Article
País de afiliación:
Italia
Pais de publicación:
Estados Unidos