Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state.
Phys Rev Lett
; 97(8): 085501, 2006 Aug 25.
Article
en En
| MEDLINE
| ID: mdl-17026313
Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which we quantify for this alloy. As the InN fraction increases from 13% to 19%, the strain in AlInN films changes from tensile to compressive with lattice matching predicted to occur at [InN] = 17.1%.
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MEDLINE
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En
Revista:
Phys Rev Lett
Año:
2006
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Article
País de afiliación:
Portugal
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Estados Unidos