Origin of the residual acceptor ground-state splitting in silicon.
Phys Rev Lett
; 90(1): 016404, 2003 Jan 10.
Article
en En
| MEDLINE
| ID: mdl-12570637
The residual ground-state splitting of acceptors in high-quality silicon has been studied intensely by different experimental techniques for several decades. Recently, photoluminescence studies of isotopically pure silicon revealed the ground-state splitting to result from the random distribution of isotopes in natural silicon. Here we present a new model that explains these surprising experimental results, and discuss the implications for acceptor ground-state splittings observed in other isotopically mixed semiconductors, as well as for the acceptor ground state in semiconductor alloys.
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01-internacional
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MEDLINE
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En
Revista:
Phys Rev Lett
Año:
2003
Tipo del documento:
Article
Pais de publicación:
Estados Unidos