RESUMO
Wide bandgap oxidized graphenes have garnered particular interest among the materials explored for these applications because of their exceptional semiconducting and optical properties. This study aims to investigate the tunability of the related properties in reduced graphene oxide (rGO) for potential use in energy conversion, storage, and optoelectronic devices. To accomplish this, we scrutinized crucial parameters of the synthesis process such as reduction time and temperature. Our findings demonstrate that controlling these parameters makes it possible to customize the optical bandgap of reduced graphene oxide within a range of roughly 2.2 eV-1.6 eV. Additionally, we observed that reduced graphene oxide has strong and superior absorption in the visible region, which is attributable to the existence of OFGs and defects. Notably, our results indicate that the absorption coefficients of reduced graphene oxide are up to almost three times higher (7426 ml mg-1 m-1) than those observed in dispersions of exfoliated graphene and graphene oxide (GO). To complement our findings, we employed several spectroscopic and morphological characterizations, including scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and electrical measurements. The implications of our results are significant for the development and design of future semiconductors for energy conversion and optoelectronic applications.
RESUMO
In this study, we investigate how changing important synthesis-related parameters can affect and control the optical characteristics of graphene oxide (GO) and reduced graphene oxide (rGO). These parameters include drying time and reduction time at two different temperatures. We obtain an understanding of their impact on optical transitions, optical bandgap, absorption coefficient, and absorbance spectrum width by analyzing these factors. Accordingly, GO has an optical bandgap of about 4 eV, which is decreased by the reduction process to 1.9 eV. Both GO and rGO display greater absorption in the visible spectrum, which improves photon capture and boosts efficiency in energy conversion applications. Additionally, our results show that GO and rGO have higher absorption coefficients than those previously reported for dispersions of exfoliated graphene. Defects in GO and rGO, as well as the presence of functional oxygen groups, are the main contributors to this increased absorption. Several measurements are carried out, including spectroscopic and morphological studies, to further support our findings.
RESUMO
The study of the optical properties of graphene oxide (GO) is crucial in designing functionalized GO materials with specific optical properties for various applications such as (bio) sensors, optoelectronics, and energy storage. The present work aims to investigate the electronic transitions, optical bandgap, and absorption coefficient of GO under different conditions. Specifically, the study examines the effects of drying times ranging from 0 to 120 h while maintaining a fixed temperature of 80°C and low temperatures ranging from 40â to 100â, with a constant drying time of 24 h. Our findings indicate that exposing the GO sample to a drying time of up to 120 h at 80°C can lead to a reduction in the optical bandgap, decreasing it from 4.09 to 2.76 eV. The π-π* transition was found to be the most affected, shifting from approximately 230 nm at 0 h to 244 nm after 120 h of drying time. Absorption coefficients of 3140-5507 ml mg-1 m-1 were measured, which are similar to those reported for exfoliated graphene dispersions but up to two times higher, confirming the improved optical properties of GO. Our findings can provide insights into determining the optimal temperature and duration required for transforming GO into its reduced form for a specific application through extrapolation. The study is complemented by analyzing the elemental composition, surface morphology change, and electrical properties.
RESUMO
Single layers of transition metal dichalcogenides (TMDCs), such as WSe2have gathered increasing attention due to their intense electron-hole interactions, being considered promising candidates for developing novel optical applications. Within the few-layer regime, these systems become highly sensitive to the surrounding environment, enabling the possibility of using a proper substrate to tune desired aspects of these atomically-thin semiconductors. In this scenario, the dielectric environment provided by the substrates exerts significant influence on electronic and optical properties of these layered materials, affecting the electronic band-gap and the exciton binding energy. However, the corresponding effect on the luminescence of TMDCs is still under discussion. To elucidate these impacts, we used a broad set of materials as substrates for single-layers of WSe2, enabling the observation of these effects over a wide range of electrical permittivities. Our results demonstrate that an increasing permittivity induces a systematic red-shift of the optical band-gap of WSe2, intrinsically related to a considerable reduction of the luminescence intensity. Moreover, we annealed the samples to ensure a tight coupling between WSe2and its substrates, reducing the effect of undesired adsorbates trapped in the interface. Ultimately, our findings reveal how critical the annealing temperature can be, indicating that above a certain threshold, the heating treatment can induce adverse impacts on the luminescence. Furthermore, our conclusions highlight the influence the dielectric properties of the substrate have on the luminescence of WSe2, showing that a low electrical permittivity favours preserving the native properties of the adjacent monolayer.