RESUMO

The seed germination, as well as root and shoot growth effect of HKUST-1 MOF, and its derived linear polymer ([Cu2(OH)(BTC)(H2O)]n·2nH2O) were herein examined. These effects were studied for seven higher plant species: sweet corn (Zea mays L.), black bean (Phaseolus vulgaris L.), tomato (Solanum lycopersicum L.), lettuce (Lactuca sativa L.), celosia (Celosia argentea L.), Aztec marigold (Tagetes erecta L.), and gypsophila (Gypsophila paniculata L.). The studied concentrations of MOFs were 10, 100, 500, or 1000 mg/L, enhancing the percentage of germination and growth of plants in most species. In general, the growth of the root is lower compared to the controls due to the capacity of the MOF to adsorb water and provide micronutrients such as C, O, and Cu, acting as a reserve for the plant. Shoot system growths are more pronounced with HKUST-1 compared with control, and linear polymer, due to the 3D structure adsorbs major water contents. It was found that all studied species are tolerant not only to Cu released from the material, but more evident to Cu structured in MOFs, and this occurs at high concentrations compared to many other systems. Finally, copper fixation was not present, studied by EDX mapping, banning the possibility of metallic phytotoxicity to the tested cultivars.

Assuntos

Germinação , Estruturas Metalorgânicas , Cobre/farmacologia , Sementes , Plantas , Lactuca , Água

RESUMO

Recent progress in synthesizing and integrating surface-supported metal-organic frameworks (SURMOFs) has highlighted their potential in developing hybrid electronic devices with exceptional mechanical flexibility, film processability, and cost-effectiveness. However, the low electrical conductivity of SURMOFs has limited their use in devices. To address this, researchers have utilized the porosity of SURMOFs to enhance electrical conductivity by incorporating conductive materials. This study introduces a method to improve the electrical conductivity of HKUST-1 templates by in situ polymerization of conductive polypyrrole (PPy) chains within the SURMOF pores (named as PPy@HKUST-1). Nanomembrane-origami technology is employed for integration, allowing a rolled-up metallic nanomembrane to contact the HKUST-1 films without causing damage. After a 24 h loading period, the electrical conductivity at room temperature reaches approximately 5.10-6 S m-1 . The nanomembrane-based contact enables reliable electrical characterization even at low temperatures. Key parameters of PPy@HKUST-1 films, such as trap barrier height, dielectric constant, and tunneling barrier height, are determined using established conduction mechanisms. These findings represent a significant advancement in real-time control of SURMOF conductivity, opening pathways for innovative electronic-optoelectronic device development. This study demonstrates the potential of SURMOFs to revolutionize hybrid electronic devices by enhancing electrical conductivity through intelligent integration strategies.

RESUMO

Memristors (MRs) are considered promising devices with the enormous potential to replace complementary metal-oxide-semiconductor (CMOS) technology, which approaches the scale limit. Efforts to fabricate MRs-based hybrid materials may result in suitable operating parameters coupled to high mechanical flexibility and low cost. Metal-organic frameworks (MOFs) arise as a favorable candidate to cover such demands. The step-by-step growth of MOFs structures on functionalized surfaces, called surface-supported metal-organic frameworks (SURMOFs), opens the possibility for designing new applications in strategic fields such as electronics, optoelectronics, and energy harvesting. However, considering the MRs architecture, the typical high porosity of these hybrid materials may lead to short-circuited devices easily. In this sense, here, it is reported for the first time the integration of SURMOF films in rolled-up scalable-functional devices. A freestanding metallic nanomembrane provides a robust and self-adjusted top mechanical contact on the SURMOF layer. The electrical characterization reveals an ambipolar resistive switching mediated by the humidity level with low-power consumption. The electronic properties are investigated with density functional theory (DFT) calculations. Furthermore, the device concept is versatile, compatible with the current parallelism demands of integration, and transcends the challenge in contacting SURMOF films for scalable-functional devices.

RESUMO

The metal-organic framework (MOF) HKUST-1 was employed as an interaction matrix for fundamental loading studies of anthraquinone dyes. Chosen dyes were alizarin (A), alizarin S (AS), disperse blue 1 (B1), disperse blue 3 (B3), disperse blue 56 (B56) and purpurin (P). All materials were characterized by XRD, FTIR, TGA and SEM. Hence the interaction of dyes with the framework was characterized by theoretical-experimental differential analysis. One-pot loading strategy resulted in more efficient scavenging of dyes, and reached 100 % for B56 using 50 mg L-1 . SEM revealed important microstructural changes, the smaller crystals ranged 0.8-3 µm in size and almost all composite sizes were from this to higher values, reaching 70 µm, with varying shapes. Two composites were larger in size range (about 2500-1000 µm), and were shaped as rods, octahedrons and coffin lids. Indeed, the microstructure could be modulated depending on preparation conditions and type of loaded dye. For the higher loading series, N2 adsorption and XPS experiments were carried on to further evidence dye-MOF interactions. Ab initio prediction of structural properties for A@HKUST-1 and P@HKUST-1 were obtained by means of solid-state CRYSTAL14 code at the PBE0 level of theory. Computed findings evidenced two O→Cu coordinative bonds, one from O-ketone and the other from O-phenolate moiety as main interactions towards CuNET centers.