RESUMO
In this work we explore the noise characteristics in lithographically-defined two terminal devices containing self-assembled InAs/InP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot.
Assuntos
Interpretação Estatística de Dados , Iluminação/instrumentação , Modelos Estatísticos , Pontos Quânticos , Simulação por Computador , Desenho Assistido por Computador , Desenho de Equipamento , Análise de Falha de Equipamento , Reprodutibilidade dos Testes , Sensibilidade e EspecificidadeRESUMO
This paper reports on the development of a magneto-optical scanning near-field optical microscope and the experimental near-field study of the domain structure for a model magnetic particle of 16 x 16 micro m(2) of a Co(70.4)Fe(4.6)Si(15)B(10) amorphous thin film, deposited on a silicon substrate. We present the topographic, optical and magneto-optical differential susceptibility (MODS) images of the particle. Imaging by using the local MODS reveals the domain structure. These images are also used for positioning the tip in order to acquire local hysteresis loops, with submicrometre spatial resolution.