RESUMO
We studied the growth of Ge layers on Au(111) under ultra-high vacuum conditions from the submonolayer regime up to a few layers with Scanning Tunneling Microscopy (STM), Direct Recoiling Spectroscopy (DRS) and Low Energy Electron Diffraction (LEED). Most STM images for the thicker layers are consistent with a commensurate 5 × 8 arrangement. The high surface sensitivity of TOF-DRS allows us to confirm the coexistence of Au and Ge atoms in the top layer for all stages of growth. An estimation of the Au to Ge ratio at the surface of the thick layer gives about 1 Au atom per 2 Ge ones. When the growth is carried out at sample temperatures higher than about 420 K, a fraction of the deposited Ge atoms migrate into the bulk of Au. This incorporation of Ge into the bulk reduces the growth rate of the Ge films, making it more difficult to obtain films thicker than a few layers. After sputtering the Ge/Au surface, the segregation of bulk Ge atoms to the surface occurs for temperatures ≥600 K. The surface obtained after segregation of Ge reaches a stable condition (saturation) with an n × n symmetry with n on the order of 14.
RESUMO
A comparative study on the adsorption of buthanedithiol (BDT), hexanedithiol (HDT), and nonanedithiol (NDT) on Au(111) from ethanolic and n-hexane solutions and two different preparation procedures is presented. SAM characterization is based on reflection-absorption infrared spectroscopy, electrochemistry, X-ray photoelectron spectroscopy, and time of flight direct recoil spectroscopy. Results indicate that one can obtain a standing-up phase of dithiols and that the amount of the precursor lying-down phase decreases from BDT to NDT, irrespective of the solvent and self-assembly conditions. A good ordering of the hydrocarbon chains in the standing-up configuration is observed for HDT and NDT when the system is prepared in degassed n-hexane with all operations carried out in the dark. Disulfide bridges at the free SH terminal groups are formed for HDT and to a lesser extent for NDT prepared in ethanol in the presence of oxygen, but we found no evidence of ordered multilayer formation in our experiments. No disulfides were observed for BDT that only forms the lying-down phase. Our results demonstrate the key role of the chain length and the procedure (solvent nature and oxygen presence) in controlling the surface structure and chemistry of SAMs dithiols on Au(111).
RESUMO
We report a multi-technique study of the adsorption kinetics and self-assembly characteristics of EP-PTCDI grown on Ag(111) at UHV conditions and room temperature. Changes in the valence band characteristics for the mono and the multilayer film and the stability as a function of the annealing temperature are discussed. The results show that the molecules start to adsorb on the step edges forming ordered islands that grow to fully cover a monolayer. Further exposure results in the stacking of similarly ordered islands of several layers. The desorption experiment shows that the film is stable up to 150 degrees C where a rapid desorption of the multilayer takes place, followed by a decomposition of the molecules for temperatures higher than 170 degrees C.
RESUMO
We present a study of the growth and thermal stability of hexanethiol (C6) films on GaAs(110) by direct recoil spectroscopy with time-of-flight analysis. We compare our results with the better known case of C6 adsorption on Au(111). In contrast to the two-step adsorption kinetics observed for Au surfaces after lengthy exposures, data for C6 adsorption on the GaAs(110) surface are consistent with the formation of a single dense phase of C6 molecules at lower exposures. On the contrary, in solution preparation, dense phases can only be obtained on GaAs for long alkanethiols and after lengthy immersions. The C6 layer has a first desorption peak at 325 K, where partial desorption of the alkanethiol molecules takes place. Fits to the desorption curves result in a 1 eV adsorption energy, in agreement with a chemisorption process. Increasing the temperature to 500 K results in the S-C bond scission with only S remaining on the GaAs(110) surface. The possibility of forming dense, short-alkanethiol layers on semiconductor surfaces from the vapor phase could have a strong impact for a wide range of self-assembled monolayer applications, with only minimal care not to surpass room temperature once the layer has been formed in order to avoid molecular desorption.