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Wearable thermoelectric generators provide a reliable power generation method for self-powered wearable electronic devices. However, there has been a lack of research regarding the comfort of wearable thermoelectric generators. Here we propose a design for a comfortable wearable thermoelectric generators system with high output power based on sandwiched thermoelectric model. This model paves the way for simultaneously optimizing comfort (skin temperature and pressure perception) and output power by systematically considering a variety of thermal resistive environments and bending states, the properties of the thermoelectric and encapsulation materials, and the device structure. To verify this strategy, we fabricate wearable thermoelectric generators using Mg-based thermoelectric materials. These materials have great potential for replacing traditional Bi2Te3-based materials and enable our wearable thermoelectric generators with a power density of 18.4 µWcm-2 under a wearing pressure of 0.8 kPa and with a skin temperature of 33 °C, ensuring the wearer's comfort.

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The binary boron-rich compounds α-Ir2B3-x and ß-Ir2B3-x, formerly denoted as α- and ß-Ir4B5, were synthesized via both arc melting followed by annealing at 800 °C (900 °C) and high-temperature thermal treatment of mixtures of the elements. X-ray structure analysis of α-Ir2B3-x was performed on a single crystal (space group C2/m, a = 10.5515(11) Å, b = 2.8842(3) Å, c = 6.0965(7) Å, ß = 91.121(9)°). The orthorhombic structure of ß-Ir2B3-x was confirmed by X-ray powder diffraction (space group Pnma; a = 10.7519(3) Å, b = 2.83193(7) Å, c = 6.0293(1) Å). The α-Ir2B3-x structure exhibits ordered arrangements of iridium atoms. The structure is composed of corrugated layers of boron hexagons (interlinked via external B-B bonds) alternating with two corrugated layers of iridium along the c-direction; an additional boron atom (Oc. 0.46(7)) is located between iridium layers in Ir6 trigonal prisms. The boron partial structure in ß-Ir2B3-x is composed of ribbons made up of slightly corrugated quadrilateral units running along the b-direction in the channels formed by 8 iridium atoms each. DFT calculations revealed a number of bands crossing the Fermi level, predicting metallic behaviors of the two compounds. ß-Ir2B3-x is characterized by a pseudogap around the Fermi level and a smaller eDOS of 0.6405 states per eV per f.u. at the Fermi level, as compared to the α-Ir2B3-x value of 1.405 states per eV per f.u. The calculated electron localization functions revealed strong covalent bonds between boron atoms in the core part of the B6 hexagons, metallic B-B bonds within the quadrilateral boron partial structure and mixed covalent and metallic interactions between iridium and boron atoms. Structural relationships of α-Ir2B3-x and ß-Ir2B3-x with ReB2-type structures as well as the common structural features with layered binary borides with CrB-type related structures have been discussed.

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Salmon milt extract (SME) is rich in nucleotides, especially deoxyribonucleoside monophosphates (dNMPs), which has the potential to exert anti-obesity effects. Sodium-dependent glucose transporter 1 (SGLT1) and glucose transporter 2 (GLUT2) are responsible for absorbing sugar from the small intestine. The purpose of this study was to examine the effects of SME on the functions of SGLT1 and GLUT2 and elucidate the mechanisms underlying the inhibition of glucose absorption by SME. We investigated the effect of SME on the expression and function of intestinal glucose transporters, using differentiated Caco-2 cells. SME treatment decreased the expression SGLT1 and GLUT2 mRNA and protein in Caco-2 cells. [14C]-Labelled methyl-α-D-glucopyranoside and [3H]-labelled 2-deoxy-D-glucose (DG) uptake into Caco-2 cells was significantly reduced by SME treatment. Similarly, the dNMP mixture containing the four mononucleotides 2'-deoxyadenosine 5'-monophosphate (dAMP), 2'-deoxyguanosine 5'-monophosphate (dGMP), 2'-deoxycytidine 5'-monophosphate (dCMP), and 2'-deoxythymidine 5'-monophosphate (dTMP) decreased SGLT1 and GLUT2 expression. dNMP mixture-induced reduction in the mRNA expression of these transporters was suppressed when exposed to the mixture without dTMP. Furthermore, dNMP mixture-induced alterations in the expression of hepatocyte nuclear factor (HNF)-1α and HNF1ß, which have been characterized as modulators of both transporters also showed a similar trend. dTMP treatment alone decreased GLUT2 expression, resulting in reduced [3H] DG uptake by Caco-2 cells. SME decreased the expression of HNF1α, HNF1ß, and its targets SGLT1 and GLUT2, resulting in reduced glucose uptake by Caco-2 cells. In addition, our results revealed that dTMP plays an important role in suppressing the expression of intestinal glucose transporters.

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GeTe-based alloys have been studied as promising TE materials in the midtemperature range as a lead-free alternate to PbTe due to their nontoxicity. Our previous study on GeTe1-xIx revealed that I-doping increases lattice anharmonicity and decreases the structural phase transition temperature, consequently enhancing the thermoelectric performance. Our current work elucidates the synergistic interplay between band convergence and lattice softening, resulting in an enhanced thermoelectric performance for Ge1-ySbyTe0.9I0.1 (y = 0.10, 0.12, 0.14, and 0.16). Sb doping in GeTe0.9I0.1 serves a double role: first, it leads to lattice softening, thereby reducing lattice thermal conductivity; second, it promotes a band convergence, thus a higher valley degeneracy. The presence of lattice softening is corroborated by an increase in the internal strain ratio observed in X-ray diffraction patterns. Doping also introduces phonon scattering centers, further diminishing lattice thermal conductivity. Additionally, variations in the electronic band structure are indicated by an increase in density of state effective mass and a decrease in carrier mobility with Sb concentration. Besides, Sb doping optimizes the carrier concentration efficiently. Through a two-band modeling and electronic band structure calculations, the valence band convergence due to Sb doping can be confirmed. Specifically, the energy difference between valence bands progressively narrows upon Sb doping in Ge1-ySbyTe0.9I0.1 (y = 0, 0.02, 0.05, 0.10, 0.12, 0.14, and 0.16). As a culmination of these effects, we have achieved a significant enhancement in zT for Ge1-ySbyTe0.9I0.1 (y = 0.10, 0.12, 0.14, and 0.16) across the entire range of measured temperatures. Notably, the sample with y = 0.12 exhibits the highest zT value of 1.70 at 723 K.

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Mg3Sb2-based thermoelectrics show great promise for next-generation thermoelectric power generators and coolers owing to their excellent figure of merit (zT) and earth-abundant composition elements. However, the complexity of the defect microstructure hinders the advancement of high performance. Here, the defect microstructure is modified via In doping and prolonged sintering time to realize the reduced structural disorder and microstructural evolution, synergistically optimizing electron and phonon transport via a delocalization effect. As a result, an excellent carrier mobility of ~174 cm2 V-1 s-1 and an ultralow κ l a t of ~0.42 W m-1 K-1 are realized in this system, leading to an ultrahigh zT of ~2.0 at 723 K. The corresponding single-leg module demonstrates a high conversion efficiency of ~12.6% with a 425 K temperature difference, and the two-pair module of Mg3Sb2/MgAgSb displays ~7.1% conversion efficiency with a 276 K temperature difference. This work paves a pathway to improve the thermoelectric performance of Mg3Sb2-based materials, and represents a significant step forward for the practical application of Mg3Sb2-based devices.

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The novel quaternary compound Rb0.2Ba0.4Cr5Se8 was synthesized and characterized in both single crystal and polycrystalline forms. Crystallizing in the monoclinic crystal system (space group C2/m, cell parameters a = 18.7071(4) Å, b = 3.6030(1) Å, c = 8.9637(3) Å, ß = 104.494(2)°) and isostructural to pseudo-hollandite compounds, it features mixed Rb and Ba occupancy within its one-dimensional channels. High-temperature X-ray diffraction revealed no decomposition up to 973 K, and the thermal expansion coefficient at 300 K was determined to be 2.6(1)·10-5 K-1. Spin-polarized density functional theory (DFT) calculations showed that the density of states for Rb0.2Ba0.4Cr5Se8 is more polarized than that of Ba0.5Cr5Se8, resulting in a higher Seebeck coefficient, which was experimentally confirmed to reach a peak value of 400 µV·K-1 at 620 K. Resistivity measurements indicated a degenerate semiconducting behavior below 550 K, with a resistivity peak of 100 mΩ·cm at that temperature, leading to a maximum power factor of 0.21 mW·m-1·K-2. Thermal conductivity measurements indicated low values around 0.8 W·m-1·K-1 in the 300-900 K range, resulting in a thermoelectric figure of merit of 0.22 at 873 K. Decorrelated transport properties observed in this double-inserted pseudo-hollandite compound make Rb0.2Ba0.4Cr5Se8 a good example of beneficial synergistic effects for higher thermoelectric performance.

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The efficiency of thermoelectric (TE) technology relies on the performance of TE materials. Substitution with heavy elements is an effective strategy in TE for enhancing phonon scattering without much affecting electrical transport properties. However, selecting suitable dopants to achieve a high TE figure-of-merit (ZT) poses a significant challenge. Thus, in this study, the efficacy of combined (Fe and Bi) co-substitution in CrSb2is investigated as a promising strategy to enhance ZT by lowering thermal conductivity. A series of co-substituted Cr1-xFexBiySb2-y(x= 0, 0.25, 0.50, 0.75, 1 andy= 0.10, 0.15, 0.20,0.25) samples were synthesized via furnace reaction followed by spark plasma sintering technique. Phase analysis and temperature dependence TE transport properties were systematically studied on synthesized samples. Furthermore, to analyze the impact of disorder induced by Bi/Fe substitution, electronic structure calculation was performed using the projector augmented-wave method. Notably, Cr0.75Fe0.25Bi0.15Sb1.85exhibited a low thermal conductivity of ∼2.5 W m-1K-1at 300 K, which reduced to half compared to that of pristine CrSb2(∼5 W m-1K-1). This reduction is attributed to the introduction of significant mass fluctuations and point defects along with the presence of Bi at grain boundaries by co-substitution. Consequently, a remarkable 90% enhancement inZT(∼0.021) at 350 K was achieved for Cr0.75Fe0.25Bi0.15Sb1.85compared to that of pristine CrSb2(ZT∼ 0.012). This study can provide valuable insights into the rational design of effective dopants in other TE materials also.

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Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco-friendly constituting elements. Here, adopting a unique synthesis route via chemical co-precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics ( P F max = $PF_{\text{max}} =$  21.5 µW cm-1 K-2 and z T max = $zT_{\text{max}} =$  0.5 at 1100 K in Zn 0.96 Al 0.04 O ${\rm Zn}_{0.96} {\rm Al}_{0.04}{\rm O}$ ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi-dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.

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In this work, Bi1-xPbxCu1-x SeO (x = 0, 0.02, 0.06, and 0.08) compounds were synthesized by a solid state reaction followed by spark plasma sintering. The effect of simultaneous Bi to Pb substitution and Cu vacancy introduction on thermoelectric properties was investigated systematically. The power factor was significantly enhanced, contributing to the increase in the zT value. As a result, the zTmax of 0.75 at 773 K was obtained for the Bi0.94Pb0.06Cu0.94SeO sample. To reveal the factors constraining the zTmax of Bi1-xPbxCuSeO-based oxyselenides, a further careful analysis of literature data was performed. We highlighted that for Pb-doped oxyselenides, the power factor is almost independent of the synthesis technique, while the lattice thermal conductivity is the main property determining zTmax and is highly affected by the synthesis method.

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Practical techniques to identify heat routes at the nanoscale are required for the thermal control of microelectronic, thermoelectric, and photonic devices. Nanoscale thermometry using various approaches has been extensively investigated, yet a reliable method has not been finalized. We developed an original technique using thermal waves induced by a pulsed convergent electron beam in a scanning transmission electron microscopy (STEM) mode at room temperature. By quantifying the relative phase delay at each irradiated position, we demonstrate the heat transport within various samples with a spatial resolution of ~10 nm and a temperature resolution of 0.01 K. Phonon-surface scatterings were quantitatively confirmed due to the suppression of thermal diffusivity. The phonon-grain boundary scatterings and ballistic phonon transport near the pulsed convergent electron beam were also visualized.

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Heterostructures of two-dimensional materials realise novel and enhanced physical phenomena, making them attractive research targets. Compared to inorganic materials, coordination nanosheets have virtually infinite combinations, leading to tunability of physical properties and are promising candidates for heterostructure fabrication. Although stacking of coordination materials into vertical heterostructures is widely reported, reports of lateral coordination material heterostructures are few. Here we show the successful fabrication of a seamless lateral heterojunction showing diode behaviour, by sequential and spatially limited immersion of a new metalladithiolene coordination nanosheet, Zn3 BHT, into aqueous Cu(II) and Fe(II) solutions. Upon immersion, the Zn centres in insulating Zn3 BHT are replaced by Cu or Fe ions, resulting in conductivity. The transmetallation is spatially confined, occurring only within the immersed area. We anticipate that our results will be a starting point towards exploring transmetallation of various two-dimensional materials to produce lateral heterojunctions, by providing a new and facile synthetic route.

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This article presents a comprehensive study on the synthesis and structural and thermal conductivity properties of cesium-inserted chromium tellurides of formula CsxCr5Te8. Single crystals of three different compositions (x = 0.73, 0.91, and 0.97) were successfully synthesized and suggested the existence of a solid solution in the range 0.73 < x < 1. Through a detailed single-crystal characterization, the complete structure of these compounds is determined, revealing a distinct B-type hollandite-like structural form derived from the hollandite structure, in contrast to the more commonly observed A-type pseudo-hollandite in AM5X8-type chalcogenides (A = cation, M = transition metal, and X = chalcogen). Periodic density functional theory calculations predict the Cs0.73Cr5Te8 composition as the most stable, with a metallic conductive behavior. The thermal conductivity of bulk CsxCr5Te8 samples is measured to be 1.4 W m-1 K-1 at 300 K and increases with temperature up to 2 W m-1 K-1 at 673 K.

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Thermoelectric materials seamlessly convert thermal into electrical energy, making them promising for power generation and cooling applications. Although historically the thermoelectric effect was first discovered in metals, state-of-the-art research focuses on semiconductors. Here, we discover unprecedented thermoelectric performance in metals and realize ultrahigh power factors up to 34 mW m-1 K-2 in binary NixAu1-x alloys, more than twice larger than in any bulk material above room temperature, reaching zTmax ∼ 0.5. In metallic NixAu1-x alloys, large Seebeck coefficients originate from electron-hole selective scattering of Au s electrons into more localized Ni d states. This intrinsic energy filtering effect owing to the unique band structure yields a strongly energy-dependent carrier mobility. While the metastable nature of the Ni-Au system as well as the high cost of Au pose some constraints for practical applications, our work challenges the common belief that good metals are bad thermoelectrics and presents an auspicious route toward high thermoelectric performance exploiting interband scattering.

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By the fine manipulation of the exceptional long-range germanium-telluride (Ge─Te) bonding through charge transfer engineering, we have achieved exceptional thermoelectric (TE) and mechanical properties in lead-free GeTe. This chemical bonding mechanism along with a semiordered zigzag nanostructure generates a notable increase of the average zT to a record value of ~1.73 in the temperature range of 323 to 773 K with ultrahigh maximum zT ~ 2.7. In addition, we significantly enhanced the Vickers microhardness numbers (Hv) to an extraordinarily high value of 247 Hv and effectively eliminated the thermal expansion fluctuation at the phase transition, which was problematic for application, by the present charge transfer engineering process and concomitant formation of microstructures. We further fabricated a single-leg TE generator and obtained a conversion efficiency of ~13.4% at the temperature difference of 463 K on a commercial instrument, which is located at the pinnacle of TE conversion.

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Bismuth telluride-based alloys possess the highest efficiencies for the low-temperature-range (<500 K) applications among thermoelectric materials. Despite significant advances in the efficiency of p-type Bi2Te3-based materials through engineering the electronic band structure by convergence of multiple bands, the n-type pair still suffers from poor efficiency due to a lower number of electron pockets near the conduction band edge than the valence band. To overcome the persistent low efficiency of n-type Bi2Te3-based materials, we have fabricated multiphase pseudobinary Bi2Te3-Bi2S3 compounds to take advantages of phonon scattering and energy filtering at interfaces, enhancing the efficiency of these materials. The energy barrier generated at the interface of the secondary phase of Bi14Te13S8 in the Bi2Te3 matrix resulted in a higher Seebeck coefficient and consequently a higher power factor in multiphase compounds than the single-phase alloys. This effect was combined with low thermal conductivity achieved through phonon scattering at the interfaces of finely structured multiphase compounds and resulted in a relatively high thermoelectric figure of merit of ∼0.7 over the 300-550 K temperature range for the multiphase sample of n-type Bi2Te2.75S0.25, double the efficiency of single-phase Bi2Te3. Our results inform an alternative alloy design to enhance the performance of thermoelectric materials.

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Two-dimensional materials have wide ranging applications in electronic devices and catalysts owing to their unique properties. Boron-based compounds, which exhibit a polymorphic nature, are an attractive choice for developing boron-based two-dimensional materials. Among them, rhombohedral boron monosulfide (r-BS) has recently attracted considerable attention owing to its unique layered structure similar to that of transition metal dichalcogenides and a layer-dependent bandgap. However, experimental evidence that clarifies the charge carrier type in the r-BS semiconductor is lacking. In this study, we synthesized r-BS and evaluated its performance as a semiconductor by measuring the Seebeck coefficient and photo-electrochemical responses. The properties unique to p-type semiconductors were observed in both measurements, indicating that the synthesized r-BS is a p-type semiconductor. Moreover, a distinct Fano resonance was observed in Fourier transform infrared absorption spectroscopy, which was ascribed to the Fano resonance between the E(2) (TO) phonon mode and electrons in the band structures of r-BS, indicating that the p-type carrier was intrinsically doped in the synthesized r-BS. These results demonstrate the potential future application prospects of r-BS.

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The crystallographic and transport properties of thin films fabricated by pulsed laser deposition and belonging to the Smy(FexNi1-x)4Sb12filled skutterudite system were studied with the aim to unveil the effect exerted by temperature and duration of thermal treatments on structural and thermoelectric features. The importance of annealing treatments in Ar atmosphere up to 523 K was recognized, and the thermal treatment performed at 473 K for 3 h was selected as the most effective in improving the material properties. With respect to the corresponding bulk compositions, a significant enhancement in phase purity, as well as an increase in electrical conductivity and a drop in room temperature thermal conductivity, were observed in annealed films. The low thermal conductivity, in particular, can be deemed as deriving from the reduced dimensionality and the consequent substrate/film interfacial stress, coupled with the nanometric grain size.

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GeTe is a promising mid-temperature thermoelectric compound but inevitably contains excessive Ge vacancies hindering its performance maximization. This work reveals that significant enhancement in the dimensionless figure of merit (ZT) could be realized by defect structure engineering from point defects to line and plane defects of Ge vacancies. The evolved defects including dislocations and nanodomains enhance phonon scattering to reduce lattice thermal conductivity in GeTe. The accumulation of cationic vacancies toward the formation of dislocations and planar defects weakens the scattering against electronic carriers, securing the carrier mobility and power factor. This synergistic effect on electronic and thermal transport properties remarkably increases the quality factor. As a result, a maximum ZT > 2.3 at 648 K and a record-high average ZT (300-798 K) were obtained for Bi0.07Ge0.90Te in lead-free GeTe-based compounds. This work demonstrates an important strategy for maximizing the thermoelectric performance of GeTe-based materials by engineering the defect structures, which could also be applied to other thermoelectric materials.

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Reducing the thermal conductivity (κ) of mesoporous N-doped titania (TiO2) is crucial for the development of TiO2-based materials that exhibit excellent electronic, photochemical, and thermoelectric properties. Mesopores can contribute to the reduction of κ via phonon scattering, and the scattering effect due to the randomness of crystal interfaces should be significantly reduced to clarify the role of mesopores in reducing thermal conductivity. Highly ordered mesoporous N-doped TiO2 comprising large crystallites was prepared with silica colloidal crystals as a template into which a Ti source was introduced, followed by calcination with urea. N-doped samples comprising large crystallites exhibiting random mesopores were also prepared and used for the investigation of the effects of the shape and arrangement of the mesopore on phonon scattering. The mesostructures of the two separately prepared N-doped TiO2 samples were retained after sintering at 873 K and 80 MPa to fabricate pellets. Furthermore, the effective suppression of the long mean-free-path phonon conduction by the thin pore walls at a nanometer scale thickness significantly reduced the thermal conductivities of both samples. The presence of ordered mesopores further contributed to the reduction of κ, which was probably due to the enhanced contribution of the backscattering of phonons caused by ordered pore wall surfaces.