RESUMO
We study the transport properties of HgTe quantum wells with critical well thickness, where the band gap is closed and the low energy spectrum is described by a single Dirac cone. In this work, we examined both macroscopic and micron-sized (mesoscopic) samples. In micron-sized samples, we observe a magnetic-field-induced quantized resistance (~h/2e) at Landau filling factor ν=0, corresponding to the formation of helical edge states centered at the charge neutrality point (CNP). In macroscopic samples, the resistance near a zero Landau level (LL) reveals strong oscillations, which we attribute to scattering between the edge ν=0 state and bulk ν≠0 hole LL. We provide a model taking an empirical approach to construct a LL diagram based on a reservoir scenario, formed by the heavy holes.
RESUMO
The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron-3D hole scattering.