RESUMO
In this work we explore the noise characteristics in lithographically-defined two terminal devices containing self-assembled InAs/InP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot.
Assuntos
Interpretação Estatística de Dados , Iluminação/instrumentação , Modelos Estatísticos , Pontos Quânticos , Simulação por Computador , Desenho Assistido por Computador , Desenho de Equipamento , Análise de Falha de Equipamento , Reprodutibilidade dos Testes , Sensibilidade e EspecificidadeRESUMO
The structural and optical properties of high-quality crystalline strained InP nanowires are reported in this article. The nanowires were produced by the vapor-liquid-solid growth method in a chemical-beam epitaxy reactor, using 20 nm gold nanoparticles as catalysts. Polarization-resolved photoluminescence experiments were carried out to study the optical properties of the InP nanowires. These experiments revealed a large blue shift of 74 meV of the first electron-to-heavy hole optical transition in the nanowires, which cannot be solely explained by quantum size effects. The blue shift is mainly attributed to the presence of biaxial compressive strain in the inward radial direction of the InP nanowires. High-resolution transmission electron microscopy Electron and selected area electron diffraction experiments show that the nanowires have high crystal quality and grow along a [001] axes. These experiments also confirmed the presence of 1.8% compressive radial strain and 2% tensile longitudinal strain in the nanowires. A simple theoretical model including both quantum confinement and strain effects consistently describes the actual energy position of the InP nanowires optical emission.
Assuntos
Cristalização/métodos , Índio/química , Modelos Químicos , Modelos Moleculares , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Fosfinas/química , Fotoquímica/métodos , Simulação por Computador , Elasticidade , Índio/efeitos da radiação , Luminescência , Teste de Materiais , Conformação Molecular , Nanoestruturas/efeitos da radiação , Nanotecnologia/instrumentação , Nanotecnologia/métodos , Óptica e Fotônica , Tamanho da Partícula , Fosfinas/efeitos da radiação , Fotoquímica/instrumentação , Estresse Mecânico , Propriedades de SuperfícieRESUMO
Wet chemical methods involving ultrasound and amide solvents were used to purify and separate large bundles of single-walled carbon nanotubes (SWNTs) into individual nanotubes that could then be transported to silicon or mica substrates. The SWNTs studied were produced by the arc-discharge process. Dry oxidation was used in an initial step to remove amorphous carbon. Subsequently, two acid purification schemes were investigated (HCl- and HNO(3)-reflux) to remove the metal growth catalyst (Ni-Y). Finally, ultrasonic dispersion of isolated tubes into either N,N-dimethylformamide (DMF) or N-methyl-2-pyrrolidone (NMP) was carried out. Raman scattering, atomic force microscopy (AFM), and electron microscopy were used to study the evolution of the products. Raman scattering was used to probe possible wall damage during the chemical processing. We found that both HCl and HNO(3) could be used to successfully remove the Ni-Y below approximately 1 wt %. However, the HNO(3)-reflux produced significant wall damage (that could be reversed by vacuum annealing at 1000 degrees C). In the dispersion step, both amide solvents (DMF and NMP) produced a high degree of isolated tubes in the final product, and no damage during this dispersion step was observed. HNO(3)-refluxed tubes were found to disperse the best into the amide solvents, perhaps because of significant wall functionalization. AFM was used to study the filament diameter and length distributions in the final product, and interesting differences in these distributions were observed, depending on the chemical processing route.