RESUMO
The performance and stability of metal halide perovskite solar cells strongly depend on precursor materials and deposition methods adopted during the perovskite layer preparation. There are often a number of different formation pathways available when preparing perovskite films. Since the precise pathway and intermediary mechanisms affect the resulting properties of the cells, in situ studies have been conducted to unravel the mechanisms involved in the formation and evolution of perovskite phases. These studies contributed to the development of procedures to improve the structural, morphological, and optoelectronic properties of the films and to move beyond spin-coating, with the use of scalable techniques. To explore the performance and degradation of devices, operando studies have been conducted on solar cells subjected to normal operating conditions, or stressed with humidity, high temperatures, and light radiation. This review presents an update of studies conducted in situ using a wide range of structural, imaging, and spectroscopic techniques, involving the formation/degradation of halide perovskites. Operando studies are also addressed, emphasizing the latest degradation results for perovskite solar cells. These works demonstrate the importance of in situ and operando studies to achieve the level of stability required for scale-up and consequent commercial deployment of these cells.
RESUMO
Herein, we report the synthesis and characterization of two Pt(II) coordination compounds, the new platinum(II)[N,N'-bis(salicylidene)-3,4-diaminobenzophenone)] ([Pt(sal-3,4-ben)]) and the already well-known platinum(II)[N,N'-bis(salicylidene)-o-phenylenediamine] ([Pt(salophen)]), along with their application as guests in a poly [9,9-dioctylfluorenyl-2,7-diyl] (PFO) conjugated polymer in all-solution processed single-layer white organic light-emitting diodes. Completely different performances were achieved: 2.2% and 15.3% of external quantum efficiencies; 2.8 cd A-1 and 12.1 cd A-1 of current efficiencies; and 3103 cd m-2 and 6224 cd m-2 of luminance for the [Pt(salophen)] and [Pt(sal-3,4-ben)] complexes, respectively. The Commission Internationale de l'Eclairage (CIE 1931) chromaticity color coordinates are (0.33, 0.33) for both 0.1% mol/mol Pt(II):PFO composites at between approximately 3.2 and 8 V. The optoelectronic properties of doped and neat PFO films have been investigated, using steady-state and time-resolved photoluminescence. Theoretical calculations at the level of relativistic density functional theory explained these results, based on the presence of the Pt(II) central ion's phosphorescence emission, considering spin-orbit coupling relationships. The overall results are explained, taking into account the active layer morphological properties, along with the device's electric balance and the emitter's efficiencies, according to deep-trap space-charge models. Considering the very simple structure of the device and the ease of synthesis of such compounds, the developed framework can offer a good trade-off for solution-deposited white organic light-emitting diodes (WOLEDs), with further applications in the field of lighting and signage.
RESUMO
Highly crystalline ZnO and Ga-modified zinc oxide (ZnO:Ga) nanoparticles containing 1, 3 and 5 atom% of Ga3+ were prepared by precipitation method at low temperature. The films were characterized by XRD, BET, XPS and SEM. No evidence of zinc gallate formation (ZnGa2O4), even in the samples containing 5 atom% of gallium, was detected by XRD. XPS data revealed that Ga is present into the ZnO matrix as Ga3+, according to the characteristic binding energies. The particle size decreased as the gallium level was increased as observed by SEM, which might be related to a faster hydrolysis reaction rate. The smaller particle size provided films with higher porosity and surface area, enabling a higher dye loading. When these films were applied to dye-sensitized solar cells (DSSCs) as photoelectrodes, the device based on ZnO:Ga 5 atom% presented an overall conversion efficiency of 6% (at 10 mW cm(-2)), a three-fold increase compared to the ZnO-based DSSCs under the same conditions. To our knowledge, this is one of the highest efficiencies reported so far for ZnO-based DSSCs. Transient absorption (TAS) study of the photoinduced dynamics of dye-sensitized ZnO:Ga films showed that the higher the gallium content, the higher the amount of dye cation formed, while no significant change on the recombination dynamics was observed. The study indicates that Ga-modification of nanocrystalline ZnO leads to an improvement of photocurrent and overall efficiency in the corresponding device.