RESUMO
We report on peculiar dynamic features of laser oscillation in a cavity with a semiconductor junction as the gain medium and an intracavity atomic absorber. The output face of the semiconductor is antireflection coated, and lasing action is achieved by using a diffraction grating to close the laser cavity. The spectral analysis of the laser emission evidences a stable emission with narrow linewidth when the oscillating frequency is resonant with the atomic absorber. We also observe frequency bistability and instability. The change between these regimes is controlled through the bias current in a very reproducible way.
RESUMO
The emission frequency of a diode laser submitted to a frequency-dependent optoelectronic feedback is observed to have more than one stable operation point together with a stable power emission. This is, to our knowledge, the first observation of bistability exclusively in the frequency of an optical system. The experiment was carried out with a semiconductor laser coupled to the cesium D2 line by an orthogonally polarized frequency-sensitive optical feedback.
RESUMO
We discuss the properties of selective reflection spectroscopy at the interface between a resonant vapor and a complex dense medium, such as a metallic film layered on a dielectric substrate. We show that in the approximation of a low-density vapor, the signal mixes up the absorptive and dispersive components of the "effective resonant susceptibility" of the vapor, with the mixture amount governed by simple laws of linear optics. Preliminary experiments performed at the interface between Cs vapor (D2, 852-nm line) and a silver-coated glass window are reported, that show qualitatively the effect of the atom-surface van der Waals interaction.