RESUMO
Photo-patterning of polymer semiconductors using photo-crosslinkers has shown potential for organic circuit fabrication via solution processing techniques. However, the performance of patterning, including resolution (R), UV light exposure dose, sensitivity (S), and contrast (γ), remains unsatisfactory. In this study, a novel conjugated polymer based photo-crosslinker (PN3, Figure 1a) is reported for the first time, which entails phenyl-substituted azide groups in its side chains. Due to the potential π-π interactions between the conjugated backbone of PN3 and those of polymer semiconductors, PN3 exhibits superior miscibility with polymer semiconductors compared to the commonly used small molecule photo-crosslinker 4Bx (Figure 1a). Consequently, photo-patterning of polymer semiconductors with PN3 demonstrates improved performance with much lower UV light exposure dose, higher S and higher γ compared to 4Bx. By utilizing electron beam lithography, patterned arrays of polymer semiconductors with resolutions down to 500 nm and clearer edges are successfully fabricated using PN3. Furthermore, patterned arrays of PDPP4T, the p-type semiconductor (Figure 1b), after being doped, can function as source-drain electrodes for fabricating field-effect transistors (FETs) with comparable charge mobility and significantly lower sub-threshold swing value compared to those with gold electrodes.
RESUMO
Polymer semiconductors hold tremendous potential for applications in flexible devices, which is however hindered by the fact that they are usually processed by halogenated solvents rather than environmentally more friendly solvents. An effective strategy to boost the solubility of high-performance polymer semiconductors in nonhalogenated solvents such as tetrahydrofuran (THF) by appending hydroxyl groups in the side chains is herein presented. The results show that hydroxyl groups, which can be easily incorporated into the side chains, can significantly improve the solubility of typical p- and n-types as well as ambipolar polymer semiconductors in THF. Meanwhile, the thin films of these polymer semiconductors from the respective THF solutions show high charge mobilities. With THF as the processing and developing solvents these polymer semiconductors with hydroxyl groups in the side chains can be well photopatterned in the presence of the photo-crosslinker, and the charge mobilities of the patterned thin films are mostly maintained by comparing with those of the respective pristine thin films. Notably, THF is successfully utilized as the processing and developing solvent to achieve high-density photopatterning with ≈82 000 device arrays cm-2 for polymer semiconductors in which hydroxyl groups are appended in the side chains.
RESUMO
In recent decades, polymer semiconductors, extensively employed as charge transport layers in devices like organic field-effect transistors (OFETs), have undergone thorough investigation due to their capacity for large-area solution processing, making them promising for mass production. Research efforts have been twofold: enhancing the charge mobilities of polymer semiconductors and augmenting their mechanical properties to meet the demands of flexible devices. Significant progress has been made in both realms, propelling the practical application of polymer semiconductors in flexible electronics. However, integrating excellent semiconducting and mechanical properties into a single polymer still remains a significant challenge. This review intends to introduce the design strategies and discuss the properties of high-charge mobility stretchable conjugated polymers. In addition, another key challenge faced in this cutting-edge field is maintaining stable semiconducting performance during long-term mechanical deformations. Therefore, this review also discusses the development of healable polymer semiconductors as a promising avenue to improve the lifetime of stretchable device. In conclusion, challenges and outline future research perspectives in this interdisciplinary field are highlighted.
RESUMO
A perylene five-membered ring diimide, PDI39, was developed as a new electron-deficient building block for n-type semiconductors. The π-expanded conjugated molecules containing azulenes were synthesized from PDI39. These conjugated molecules show helical geometry and near-infrared absorption up to 810 nm.