RESUMO
The topological properties of materials are, until now, associated with the features of their crystalline structure, although translational symmetry is not an explicit requirement of the topological phases. Recent studies of hopping models on random lattices have demonstrated that amorphous model systems show a nontrivial topology. Using ab initio calculations, we show that two-dimensional amorphous materials can also display topological insulator properties. More specifically, we present a realistic state-of-the-art study of the electronic and transport properties of amorphous bismuthene systems, showing that these materials are topological insulators. These systems are characterized by the topological index [Formula: see text]2 = 1 and bulk-edge duality, and their linear conductance is quantized, [Formula: see text], for Fermi energies within the topological gap. Our study opens the path to the experimental and theoretical investigation of amorphous topological insulator materials.
RESUMO
We have performed a systematic investigation of the nature of the nontrivial interface states in topological/normal insulator (TI/NI) heterostructures. On the basis of first principles and a recently developed scheme to construct ab initio effective Hamiltonian matrices from density functional theory calculations, we studied systems of realistic sizes with high accuracy and control over the relevant parameters such as TI and NI band alignment, NI gap, and spin-orbit coupling strength. Our results for IV-VI compounds show the interface gap tunability by appropriately controlling the NI thickness, which can be explored for device design. Also, we verified the preservation of an in-plane spin texture in the interface-gaped topological states.