RESUMO
Herein, we report the synthesis, structural and microstructural characterization, and thermoelectric properties of AgSnm[Sb0.8Bi0.2]Te2+m and Br-doped telluride systems. These compounds were prepared by solid-state reaction at high temperature. Powder X-ray diffraction data reveal that these samples exhibit crystal structures related to the NaCl-type lattice. The microstructures and morphologies are investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDS), and high-resolution transmission electron microscopy (HRTEM). Positive values of the Seebeck coefficient (S) indicate that the transport properties are dominated by holes. The S of undoped AgSnm[Sb0.8Bi0.2]Te2+m ranges from +40 to 57 µV·K-1. Br-doped samples with m = 2 show S values of +74 µV·K-1 at RT, and the Seebeck coefficient increases almost linearly with increasing temperature. The total thermal conductivity (κtot) monotonically increases with increasing temperature (10-300 K). The κtot values of undoped AgSnm[Sb0.8Bi0.2]Te2+m are ~1.8 W m-1 K-1 (m = 4) and ~1.0 W m-1 K-1 (m = 2) at 300 K. The electrical conductivity (σ) decreases almost linearly with increasing temperature, indicating metal-like behavior. The ZT value increases as a function of temperature. A maximum ZT value of ~0.07 is achieved at room temperature for the Br-doped phase with m = 4.
RESUMO
Cs2AgBiBr6 is a potential lead-free double perovskite candidate for optoelectronic applications; however, its large and indirect band gap imposes limitations. Here, single crystals of Cs2AgBiBr6 are doped with Cu2+ cations to increase the absorption range from the visible region up to 0.5 eV in the near-infrared region. Inductively coupled plasma spectroscopy confirms the presence of 1.9% of copper in the Cs2AgBiBr6 structure. Structural and optical changes caused by Cu doping were studied by Raman spectroscopy combined with X-ray diffraction, heat capacity measurements, and low-temperature photoluminescence spectroscopy. Along with the 1.9 eV emission typical of the pristine Cs2AgBiBr6 single crystals, we report a novel low-energy emission at 0.9 eV related to deep defects. In the doped crystals, these peaks are quenched, and a new emission band at 1.3 eV is visible. This new emission band appears only above 120 K, showing that thermal energy is necessary to trigger the copper-related emission.