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Photodetectors and gas sensors are vital in modern technology, spanning from environmental monitoring to biomedical diagnostics. This paper explores the UV detection and gas sensing properties of a zinc oxide (ZnO) nanorod array (ZNA) grown on silver nanowire mesh (AgNM) using a hydrothermal method. We examined the impact of different zinc acetate precursor concentrations on their properties. Results show the AgNM forms a network with high transparency (79%) and low sheet resistance (7.23 Ω/â¡). A sol-gel ZnO thin film was coated on this mesh, providing a seed layer with a hexagonal wurtzite structure. Increasing the precursor concentration alters the diameter, length, and area density of ZNAs, affecting their performance. The ZNA-AgNM-based photodetector shows enhanced dark current and photocurrent with increasing precursor concentration, achieving a maximum photoresponsivity of 114 A/W at 374 nm and a detectivity of 6.37 × 1014 Jones at 0.05 M zinc acetate. For gas sensing, the resistance of ZNA-AgNM-based sensors decreases with temperature, with the best hydrogen response (2.71) at 300 °C and 0.04 M precursor concentration. These findings highlight the potential of ZNA-AgNM for high-performance UV photodetectors and hydrogen gas sensors, offering an alternative way for the development of future sensing devices with enhanced performance and functionality.
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Traditional optical communication systems rely on single narrow-band PDs, which can expose confidential information and data to potential eavesdropping in free space. With advancements in technology, even optical communication in the UV spectrum, invisible to the sun, faces risks of interception. Consequently, broad-band PDs that combine optical encryption with algorithmic encryption hold significant promise for secure and reliable communication. This study presents a photodetector based on TiO2-α-Ga2O3 heterostructures, prepared via direct oxidation and hydrothermal reaction, demonstrating self-powered UVC/UVA broad-band detection capabilities. The PD exhibits response peaks at approximately 250 and 320 nm, with R of 42.16 and 59.88 mA/W and D* of 8.21 × 1013 and 9.56 × 1013 Jones, respectively. Leveraging the superior optical response characteristics of UVC and UVA wavelengths, this device has been employed to develop a communication system designed for data transmission. The proposed system features two independent channels: one for data transmission using UVC and another for key distribution using UVA. Secure communication is ensured through specialized encryption algorithms. In summary, this work offers a straightforward, cost-effective, and practical method for fabricating self-powered UVC/UVA broad-band PDs. This PD provides new insights into the development of multi-purpose, multi-band secure optical communication devices and holds promise for integration into multifunctional optoelectronic systems in the future.
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Self-powered ultraviolet photodetectors with bipolar photoresponse have great potential in the fields of ultraviolet optical communication, all-optical controlled artificial synapses, high-resolution ultraviolet imaging equipment, and multiband photoelectric detection. However, the current low optoelectronic performance limits the development of such polar switching devices. Here, we construct a self-powered ultraviolet photodetector based on GaN and In/Sn-doped Ga2O3 (IGTO) nanowires (NWs) pn junction structure. This unique nanowire/thin film structure allows GaN and IGTO to dominate the absorption of light at different wavelengths, resulting in a highly bipolar photoresponse. The device has a responsivity of 2.04 A/W and a normalized detectivity of 7.18 × 1013 Jones at 254 nm and a responsivity of -2.09 A/W and a normalized detectivity of -7 × 1013 Jones at 365 nm, both at zero bias. In addition, it has an extremely high Ilight/Idark ratio of 1.05 × 105 and ultrafast response times of 2.4/1.9 ms (at 254 nm) and 5.7/5.2 ms (at 365 nm). These excellent properties are attributed to the high specific surface area of the one-dimensional nanowire structure and the abundant voids generated by the nanowire network to enhance the absorption of light, and the p-n junction structure enables the rapid separation and transfer of photogenerated electron-hole pairs. Our findings provide a feasible strategy for high-performance wavelength-controlled polarity switching devices.
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This research explores the architecture and efficacy of GaN/AlxGa1-xN-based heterojunction phototransistors (HPTs) engineered with both a compositionally graded and a doping-graded base. Employing theoretical analysis along with empirical fabrication techniques, HPTs configured with an aluminum compositionally graded base were observed to exhibit a substantial enhancement in current gain. Specifically, theoretical models predicted a 12-fold increase, while experimental evaluations revealed an even more pronounced improvement of approximately 27.9 times compared to conventional GaN base structures. Similarly, HPTs incorporating a doping-graded base demonstrated significant gains, with theoretical predictions indicating a doubling of current gain and experimental assessments showing a 6.1-fold increase. The doping-graded base implements a strategic modulation of hole concentration, ranging from 3.8 × 1016 cm-3 at the base-emitter interface to 3.8 × 1017 cm-3 at the base-collector junction. This controlled gradation markedly contributes to the observed enhancements in current gain. The principal mechanism driving these improvements is identified as the increased electron drift within the base, propelled by the intrinsic electric field inherent to both the compositionally and doping-graded structures. These results highlight the potential of such graded base designs in enhancing the performance of GaN/AlxGa1-xN HPTs and provide crucial insights for the advancement of future phototransistor technologies.
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Two-dimensional (2D) semiconductors possess exceptional electronic, optical, and magnetic properties, making them highly desirable for widespread applications. However, conventional mechanical exfoliation and epitaxial growth methods are insufficient in meeting the demand for atomically thin films covering large areas while maintaining high quality. Herein, leveraging liquid metal oxidation reaction, we propose a motorized spin-coating exfoliation strategy to efficiently produce large-area 2D metal oxide (2DMO) semiconductors with high crystallinity, atomically thin thickness, and flat surfaces on diverse substrates. Moreover, we realized a 2D gallium oxide-based deep ultraviolet solar-blind photodetector featuring a metal-semiconductor-metal structure, showcasing high responsivity (8.24 A W-1) at 254 nm and excellent sensitivity (4.3 × 1012 cm Hz1/2 W-1). This novel liquid-metal-based spin-coating exfoliation strategy offers great potential for synthesizing atomically thin 2D semiconductors, opening new avenues for future functional electronic and optical applications.
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Ultraviolet photodetectors (UV PDs) have attracted significant attention due to their wide range of applications, such as underwater communication, biological analysis, and early fire warning systems. Indium oxide (In2O3) is a candidate for developing high-performance photoelectrochemical (PEC)-type UV PDs owing to its high UV absorption and good stability. However, the self-powered photoresponse of the previously reported In2O3-based PEC UV PDs is unsatisfactory. In this work, high-performance self-powered PEC UV PDs were constructed by using an In2O3 nanocube film (NCF) as a photoanode. In2O3 NCF photoanodes were synthesized on FTO by using hydrothermal methods with a calcining process. The influence of the electrolyte concentration, bias potential, and irradiation light on the photoresponse properties was systematically studied. In2O3 NCF PEC UV PDs exhibit outstanding self-powered photoresponses to 365 nm UV light with a high responsivity of 44.43 mA/W and fast response speed (20/30 ms) under zero bias potential, these results are superior to those of previously reported In2O3-based PEC UV PDs. The improved self-powered photoresponse is attributed to the higher photogenerated carrier separation efficiency and faster charge transport of the in-situ grown In2O3 NCF. In addition, these PDs exhibit excellent multicycle stability, maintaining the photocurrent at 98.69% of the initial value after 700 optical switching cycles. Therefore, our results prove the great promise of In2O3 in self-powered PEC UV PDs.
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Ultraviolet photodetectors (UPDs) based on low-dimensional halide perovskites have undergone rapid development. Here, regulation of the electronic configuration of low-dimensional hybrid perovskites are reported via organic cations for self-powered UPDs. For the first time, it is determine that the rational design of organic cation phenyl alkylammonium can effectively prevent phonon scattering thus increasing charge carrier extraction in low dimensional lead chlorine perovskite thin-films. As a result, the exciton-binding energy can be reduced to 62.91 meV in (PMA)2 PbCl4 perovskite films with a charge-carrier mobility of 0.335 cm2 V-1 s-1 . The fabricated (PMA)2 PbCl4 -based self-powered UPDs has achieved a high detectivity of 6.32 × 1013 jones with a low noise current of 0.35 pA Hz-1/2 under zero bias. A further demonstration of images with high UV to visible light rejection ratio under weak-light illumination of 70 nW cm-2 highlights the feasible potential application of low-dimensional perovskite.
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Wearable and flexible ß-Ga2O3-based semiconductor devices have attracted considerable attention, due to their outstanding performance and potential application in real-time optoelectronic monitoring and sensing. However, the unavailability of high-quality crystalline and flexible ß-Ga2O3 membranes limits the fabrication of relevant devices. Here, through lattice epitaxy engineering together with the freestanding method, we demonstrate the preparation of a robust bending-resistant and crystalline ß-Ga2O3 (-201) membrane. Based on this, we fabricate a flexible ß-Ga2O3 photodetector device that shows comparable performance in photocurrent responsivity and spectral selectivity to conventional rigid ß-Ga2O3 film-based devices. Moreover, based on the transferred ß-Ga2O3 membrane on a silicon wafer, the PEDOT:PSS/ß-Ga2O3 p-n heterojunction device with self-powered characteristic was constructed, further demonstrating its superior heterogeneous integration ability with other functional materials. Our results not only demonstrate the feasibility of obtaining a high-quality crystalline and flexible ß-Ga2O3 membrane for an integrated device but also provide a pathway to realize flexible optical and electronic applications for other semiconducting materials.
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ß-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1-x)2O3 (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3 leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1-x)2O3 can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In0.4Ga1.6O3 for high-performance MSM UV photodetectors.
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This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high photo-to-dark current ratio (PDCR) of 3.2 × 105. The quantum wells of the p-GaN/AlGaN and AlGaN/GaN heterojunctions can trap the holes and electrons excited by the UV illumination, thus efficiently triggering a photovoltaic effect and photoconductive effect, separately. Furthermore, the prepared photodetectors allow flexible adjustment of the static bias point, making it adaptable to different environments. Compared to traditional thin-film semi-transparent Ni/Au gates, indium tin oxide (ITO) exhibits higher transmittance. Under 355 nm illumination, the photodetector exhibited a super-high responsivity exceeding 3.5 × 104 A/W, and it could even exceed 106 A/W under 300 nm illumination. The well-designed UVPD combines both the advantages of the high-transmittance ITO gate and the structure of the commercialized p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), which opens a new possibility of fabricating large-scale, low-cost, and high-performance UVPDs in the future.
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TiO2 has great potential for application in UV photodetectors due to its excellent photoelectric response. In this work, composite nanomaterials of TiO2 nanotube arrays (TiO2 NTAs) and polyaniline (PANI) were successfully prepared on titanium sheets using an anodic oxidation electrochemical method. The results showed that the TiO2 NTA/PANI composite materials had excellent UV photosensitivity and responsiveness and good stability and reproducibility. This was mainly attributed to the p-n heterostructure formed inside the TiO2 NTA/PANI composites that hindered the recombination of photogenerated electron-hole pairs and improved their utilization of UV light. This work provides a theoretical basis for the application of metal oxides in UV photodetectors, which is important for the development of UV photodetectors.
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High-performance ultraviolet photodetectors have important scientific research significance and practical application value, which has been the focus of researchers. In this work, we have constructed a highly photosensitive UV photodetector with a unique "sandwich" structure, which was mainly composed of two layers of ZnO nanosheet arrays and one layer of polyaniline (PANI). The results showed that the UV current of ZnO/PANI devices was 100 times higher than that of pure ZnO devices under the same UV irradiation time. At a 365 nm wavelength, the device had excellent photocurrent responsiveness and photoconductivity. This high performance was attributed to the large specific surface area of ZnO nanosheets and the p-n junction formed between P-type PANI nano-porous film and N-type ZnO nanosheets. This provides a solid theoretical basis for the application of ZnO nanosheets in ultraviolet detection, and possesses significance for the development of ultraviolet photodetectors.
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A high-performance, low-voltage, transparent, metal-semiconductor-metal ultraviolet (UV) photodetector (PD) is proposed and experimentally demonstrated, based on gold (Au) asymmetric interdigitated (aIDT) electrodes with thicknesses well below 10 nm. A 7-nm-thick Au film, with a visible transmittance of 80.4% and a sheet resistance of 11.55 Ω/sq, is patterned into aIDT electrodes on a ZnO active layer, whose average visible transmittance is up to 74.3%. Meshing the pads further improves the overall transmittance of the device. Among all fabricated devices, the PD with the aIDT finger width ratio of 1:4 performs the best. Very low dark currents are achieved at 0, 0.5 and 1 V, allowing for high responsivities and specific detectivities to the UV light. It is also a fast device, especially under the biases of 0.5 and 1 V. The comprehensive performances are comparable and even superior to those of the reported devices. The asymmetric Schottky junctions induced by the aIDT electrodes under UV illumination are the main mechanism for the low-voltage operation of our transparent PD, which is promising to be applied widely.
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Here, we report a novel, feasible, and cost-effective method for the preparation of one-dimensional TiO2 nanowire arrays using a super-aligned carbon nanotube film as a template. Pure-anatase-phase TiO2 nanowires were scalably prepared in a suspended manner, and a high-performance ultraviolet (UV) photodetector was realized on a flexible substrate. The large surface area and one-dimensional nanostructure of the TiO2 nanowire array led to a high detectivity (1.35 × 1016 Jones) and an ultrahigh photo gain (2.6 × 104), respectively. A high photoresponsivity of 7.7 × 103 A/W was achieved under 7 µW/cm2 UV (λ = 365 nm) illumination at a 10 V bias voltage, which is much higher than those of commercial UV photodetectors. Additionally, by taking advantage of its anisotropic geometry, we found the TiO2 nanowire array showed polarized photodetection. The concept of using nanomaterial systems shows the potential for realization of nanostructured photodetectors for practical applications.
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Incorporating emerging ultrawide bandgap semiconductors with a metal-semiconductor-metal (MSM) architecture is highly desired for deep-ultraviolet (DUV) photodetection. However, synthesis-induced defects in semiconductors complicate the rational design of MSM DUV photodetectors due to their dual role as carrier donors and trap centers, leading to a commonly observed trade-off between responsivity and response time. Here, we demonstrate a simultaneous improvement of these two parameters in ε-Ga2O3 MSM photodetectors by establishing a low-defect diffusion barrier for directional carrier transport. Specifically, using a micrometer thickness far exceeding its effective light absorption depth, the ε-Ga2O3 MSM photodetector achieves over 18-fold enhancement of responsivity and simultaneous reduction of the response time, which exhibits a state-of-the-art photo-to-dark current ratio near 108, a superior responsivity of >1300 A/W, an ultrahigh detectivity of >1016 Jones, and a decay time of 123 ms. Combined depth-profile spectroscopic and microscopic analysis reveals the existence of a broad defective region near the lattice-mismatched interface followed by a more defect-free dark region, while the latter one serves as a diffusion barrier to assist frontward carrier transport for substantially enhancing the photodetector performance. This work reveals the critical role of the semiconductor defect profile in tuning carrier transport for fabricating high-performance MSM DUV photodetectors.
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Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In2O3)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In2O3-based PEC UV PDs for the first time. In2O3 microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In2O3 MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 1010 Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In2O3 MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In2O3 holds great promise in high-performance PEC UV PDs.
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In this work, we successfully assembled an organic-inorganic core-shell hybrid p-n heterojunction ultraviolet photodetector by the electropolymerization deposition of poly(3,4-ethylenedioxyselenophene) (PEDOS) on the surface of zinc oxide nanoarrays (ZnO NRs). The structures of composite were confirmed by FTIR, UV-Vis, XRD and XPS. Mott-Schottky analysis was used to study the p-n heterojunction structure. The photodetection properties of ZnO NRs/PEDOS heterojunction ultraviolet photodetector were systematically investigated current-voltage (I-V) and current-time (I-t) analysis under different bias voltages. The results showed that PEDOS films uniformly grew on ZnO NRs surface and core-shell structure was formed. The p-n heterojunction structure was formed with strong built-in electric field between ZnO NRs and PEDOS. Under the irradiation of UV light, the device showed a good rectification behavior. The responsivity, detection rate and the external quantum efficiency of the ultraviolet photodetector reached to 247.7 A/W, 3.41 × 1012 Jones and 84,000% at 2 V bias, respectively. The rise time (τr) and fall time (τf) of ZnO NRs/PEDOS UV photodetector were obviously shortened compared to ZnO UV photodetector. The results show that the introduction of PEDOS effectively improves the performance of the UV photodetector.
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One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting of 20 photodetector units, in which the photosensitive layer involves preprocessing commercial ε-Ga2O3 films with high temperature annealing, have been constructed by low-cost magnetron sputtering and mask processes. The ε-Ga2O3 ultraviolet photodetector unit shows excellent responsivity and detectivity of 6.18 A/W and 5 × 1013 Jones, respectively, an ultra-high light-to-dark ratio of 1.45 × 105, and a fast photoresponse speed (0.14/0.09 s). At the same time, the device also shows good solar-blind characteristics and stability. Based on this, we demonstrate an ε-Ga2O3-thin-film-based solar-blind ultraviolet detector array with high uniformity and high performance for solar-blind imaging in optoelectronic integration applications.
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Ultraviolet photodetectors (UVPDs) based on wide band gap semiconductors (WBSs) are important for various civil and military applications. However, the relatively harsh preparation conditions and the high cost are unfavorable for commercialization. In this work, we proposed a non-WBS UVPD by using a silicon nanowire (SiNW) array with a diameter of 45 nm as building blocks. Device analysis revealed that the small diameter SiNW array covered with monolayer graphene was sensitive to UV light but insensitive to both visible and infrared light illumination, with a typical rejection ratio of 25. Specifically, the responsivity, specific detectivity, and external quantum efficiency under 365 nm illumination were estimated to be 0.151 A/W, 1.37 × 1012 Jones, and 62%, respectively, which are comparable to or even better than other WBS UVPDs. Such an abnormal photoelectrical characteristic is related to the HE1m leaky mode resonance (LMR), which is able to shift the peak absorption spectrum from near-infrared to UV regions. It is also revealed that this LMR is highly dependent on the diameter and the period of the SiNW array. These results show narrow band gap semiconductor nanostructures as promising building blocks for the assembly of sensitive UV photodetectors, which are very important for various optoelectronic devices and systems.
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Recently, newly emerging halide perovskites have aroused intensive attention in photoelectric fields in virtue of their good properties, such as well-balanced carrier transport, large light absorption coefficient, tunable band gap, and low-temperature solution processing technique. Nevertheless, their future commercial development is severely hampered by lead toxicity and instability of such materials. In this work, one-dimensional Rb2CuBr3 single-crystal microwires (MWs) were prepared by antisolvent engineering, and they were further employed as absorbers to prepare sensitive ultraviolet (UV) photodetectors. The optical band gap of Rb2CuBr3 MWs is measured to be 3.83 eV, exhibiting an excellent UV absorption. The fabricated device demonstrates a remarkable UV light detection ability with a specific detectivity of 1.23 × 1011 Jones, responsivity of 113.64 mA W-1, and response speed of 69.31/87.55 ms under light illumination of 265 nm. Meanwhile, the proposed photodetector without any encapsulation shows outstanding stability and repeatability. After storing in ambient air for 2 weeks, the light detection ability remains basically unchanged. Further, a flexible photodetector was fabricated with the same structure, which demonstrates a remarkable bending endurance. These results confirm the great potential of Rb2CuBr3 for high-performance UV photodetectors, increasing the possibility for assembly of optoelectronic systems.