RESUMEN
The superior optical properties of colloidal quantum dots (QDs) have garnered significant broad interest from academia and industry owing to their successful application in self-emitting QD-based light-emitting diodes (QLEDs). In particular, active research is being conducted on QLEDs with top-emission device architectures (TQLEDs) owing to their advantages such as easy integration with conventional backplanes, high color purity, and excellent light extraction. However, due to the complicated optical phenomena and their highly sensitive optoelectrical properties to experimental variations, TQLEDs cannot be optimized easily for practical use. This review summarizes previous studies that have investigated top-emitting device structures and discusses ways to advance the performance of TQLEDs. First, theories relevant to the optoelectrical properties of TQLEDs are introduced. Second, advancements in device optimization are presented, where the underlying theories for each are considered. Finally, multilateral strategies for TQLEDs to enable their wider application to advanced industries are discussed. This work believes that this review can provide valuable insights for realizing commercial TQLEDs applicable to a broad range of applications.
RESUMEN
Perovskite light-emitting diodes (PeLEDs) have shown incalculable application potential in the fields of next-generation displays and light communication owing to the rapidly increased external quantum efficiencies (EQEs). However, most PeLEDs obtain a maximum EQE at small current density (J) region and suffer from severe efficiency roll-off in different extents. Herein, it is demonstrated that the dopant with large dipole moment like KBF4 facilitates the effective dielectric regulation of perovskite emissive layer. The increased dielectric constant lowers the exciton binding energy and suppresses the Auger recombination of the 2D/3D segregated perovskite structure, which improves the photoluminescence quantum yield remarkably at an excitation intensity up to 103 mW cm-2 . Accordingly, the top-emission PeLED that delivers a high maximum EQE above 20% is fabricated and can retain EQE > 10% at an extremely high J of 708 mA cm-2 . These results represent one of the most efficient top-emission PeLEDs with ultra-low efficiency roll-off, which provide a viable methodology for tuning the dielectric response of perovskite films for improved high radiance performance of perovskite electroluminescence devices.
RESUMEN
An electroluminescent quantum-dot light-emitting diode (QLED) device and a micro QLED device array with a top-emitting structure were demonstrated in this study. The QLED device was fabricated in the normal structure of [ITO/Ag/ITO anode]/PEDOT:PSS/PVK/QDs/[ZnO nanoparticles]/Ag/MoO3, in which the semi-transparent MoO3-capped Ag cathode and the reflective ITO/metal/ITO (IMI) anode were designed to form an optical microcavity. Compared with conventional bottom-emitting QLED, the microcavity-based top-emitting QLED possessed enhanced optical properties, e.g., ~500% luminance, ~300% current efficiency, and a narrower bandwidth. A 1.49 inch micro QLED panel with 86,400 top-emitting QLED devices in two different sizes (17 × 78 µm2 and 74 × 40.5 µm2) on a low-temperature polysilicon (LTPS) backplane was also fabricated, demonstrating the top-emitting QLED with microcavity as a promising structure in future micro display applications.
RESUMEN
The desire to enhance the efficiency of organic light-emitting devices (OLEDs) has driven to the investigation of advanced materials with fascinating properties. In this work, the efficiency of top-emission OLEDs (TEOLEDs) is enhanced by introducing ampicillin microstructures (Amp-MSs) with dual phases (α-/ß-phase) that induce photoluminescence (PL) and electroluminescence (EL). Moreover, Amp-MSs can adjust the charge balance by Fermi level (EF ) alignment, thereby decreasing the leakage current. The decrease in the wave-guided modes can enhance the light outcoupling through optical scattering. The resulting TEOLED demonstrates a record-high external quantum efficiency (EQE) (maximum: 68.7% and average: 63.4% at spectroradiometer; maximum: 44.8% and average: 42.6% at integrating sphere) with a wider color gamut (118%) owing to the redshift of the spectrum by J-aggregation. Deconvolution of the EL intensities is performed to clarify the contribution of Amp-MSs to the device EQE enhancement (optical scattering by Amp-MSs: 17.0%, PL by radiative energy transfer: 9.1%, and EL by J-aggregated excitons: 4.6%). The proposed TEOLED outperforms the existing frameworks in terms of device efficiency.
RESUMEN
Top-emitting quantum-dot light-emitting diodes (TQLEDs) with light emitted from the top semitransparent electrodes can improve the aperture ratio, efficiency, and color saturation of displays. However, because of the microcavity effect induced by the top semitransparent electrodes, the devices usually exhibit angular-dependent emission, which is unfavorable for display applications. In this study, highly transparent and conductive indium zinc oxide (IZO) is used as the top electrode to reduce the microcavity effect, thereby improving the angular color stability. By further applying a nanosphere scattering layer on the IZO top electrode, the trapped light is greatly extracted, and thus, the external quantum efficiencies (EQEs) are remarkably improved by 35, 50, and 133% for the red, green, and blue devices, respectively. The champion red TQLEDs exhibit a record EQE of 32.5% with angular-independent color emission. The demonstrated TQLEDs with high efficiency, high color stability, and a high aperture ratio could be the ideal candidates for QLED displays.
RESUMEN
A novel device structure for thermally activated delayed fluorescence (TADF) top emission organic light-emitting diodes (TEOLEDs) that improves the viewing angle characteristics and reduces the efficiency roll-off is presented. Furthermore, we describe the design and fabrication of a cavity-suppressing electrode (CSE), Ag (12 nm)/WO3 (65 nm)/Ag (12 nm) that can be used as a transparent cathode. While the TADF-TEOLED fabricated using the CSE exhibits higher external quantum efficiency (EQE) and improved angular dependency than the device fabricated using the microcavity-based Ag electrode, it suffers from low color purity and severe efficiency roll-off. These drawbacks can be reduced by using an optimized multi-quantum well emissive layer (MQW EML). The CSE-based TADF-TEOLED with an MQW EML fabricated herein exhibits a high EQE (18.05%), high color purity (full width at half maximum ~ 59 nm), reduced efficiency roll-off (~ 46% at 1000 cd m-2), and low angular dependence. These improvements can be attributed to the synergistic effect of the CSE and MQW EML. An optimized transparent CSE improves charge injection and light outcoupling with low angular dependence, and the MQW EML effectively confines charges and excitons, thereby improving the color purity and EQE significantly. The proposed approach facilitates the optimization of multiple output characteristics of TEOLEDs for future display applications.
RESUMEN
In this study, we report on the application of a dielectric/ultra-thin metal/dielectric (DMD) multilayer consisting of ytterbium (Yb)-doped molybdenum oxide (MoO3)/silver (Ag)/MoO3 stacked as the transparent cathode in top-emitting green quantum dot light-emitting diodes (QLED). By optimizing the Yb doping ratio, we have highly improved the electron injection ability from 0.01 to 0.35. In addition, the dielectric/ultra-thin metal/dielectric (DMD) cathode also shows a low sheet resistance of only 12.2 Ω/sq, which is superior to the resistance of the commercially-available indium tin oxide (ITO) electrode (~15 Ω/sq). The DMD multilayer exhibits a maximum transmittance of 75% and an average transmittance of 70% over the visible range of 400-700 nm. The optimized DMD-based G-QLED has a smaller current leakage at low driving voltage. The optimized DMD-based G-QLED enhances the current density than that of G-QLED with indium zinc oxide (IZO) as a cathode. The fabricated DMD-based G-QLED shows a low turn-on voltage of 2.2 V, a high current efficiency of 38 cd/A, and external quantum efficiency of 9.8. These findings support the fabricated DMD multilayer as a promising cathode for transparent top-emitting diodes.
RESUMEN
In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150 °C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure.