RESUMEN

We have investigated the plasma-enhanced chemical vapor deposition growth of the phosphorus-doped hydrogenated nanocrystalline silicon (n-nc-Si:H) film as an electron-selective layer in silicon heterojunction (SHJ) solar cells. The effect of power densities on the precursor gas dissociation are investigated using optical emission spectra and the crystalline fraction in n-nc-Si:H films are correlated with the dark conductivity. With thePdof 122 mW cm-2and ∼2% phosphorus doping, we observed Raman crystallinity of 53%, high dark conductivity of 43 S cm-1, and activation energy of ∼23 meV from the ∼30 nm n-nc-Si:H film. The n-nc-Si:H layer improves the textured c-Si surface passivation by two-fold to ∼2 ms compared to the phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) layers. An enhancement in the open-circuit voltage and external quantum efficiency (from >650 nm) due to the better passivation at the rear side of the cell after integrating the n-nc-Si:H layer compared to its n-a-Si:H counterpart. An improvement in the charge carrier transport is also observed with an increase in fill factor from ∼71% to ∼75%, mainly due to a reduction in electron-selective contact resistivity from ∼271 to ∼61 mΩ-cm2. Finally, with the relatively better c-Si surface passivation and carrier selectivity, a power conversion efficiency of ∼19.90% and pseudo-efficiency of ∼21.90% have been realized from the SHJ cells.

RESUMEN

Appropriate and rational management of the energy produced by renewable energy sources is one of the most urgent challenges for the global energy sector. This paper is devoted to the systematic experimental and theoretical studies of a modular solar charger based on silicon and dye-sensitized solar cells as an energy source, and supercapacitor as an energy bank. Using the MathCAD program, I-V characteristics were plotted for both a single cell and a photovoltaic module based on various series-to-parallel connections. To assess the surface quality of the modules, additional tests using a thermal imaging camera were carried out as well. The charging characteristics of the supercapacitor (two series-connected cells with a capacity of 300 F), were determined depending on the parameters of the photovoltaic module as well as considering the influence of the voltage balancing system and control system. The charge, discharge, and recharge characteristics were carefully analyzed to optimize the operating conditions, i.e. the number of photovoltaic cells. To evaluate the stability of parameters with operation time, and their temperature dependence (17-65 °C), solar modules were tested for ten days under Central European weather conditions. Importantly, a comparative analysis of solar chargers based on different configurations of photovoltaic cells showed an increase in electrical parameters for the proposed modular inorganic-organic concept compared to dye-sensitized solar cells produced alone on a rigid substrate. Finally, preliminary assumptions (requirements) were developed regarding the electrical and optical parameters for new dye-sensitized solar cells that could be used in the innovative solar charger instead of silicon cells along with a predicted role of artificial intelligence (AI) in these devices.

RESUMEN

A crystalline silicon (c-Si) solar cell with a polycrystalline silicon/SiOx (poly-Si/SiOx) structure, incorporating both electron and hole contacts, is an attractive choice for achieving ideal carrier selectivity and serving as a fundamental component in high-efficiency perovskite/Si tandem and interdigitated back-contact solar cells. However, our understanding of the carrier transport mechanism of hole contacts remains limited owing to insufficient studies dedicated to its investigation. There is also a lack of comparative studies on the poly-Si/SiOx electron and hole contacts for ideal carrier-selective solar cells. Therefore, this study aims to address these knowledge gaps by exploring the relationship among microstructural evolution, dopant in-diffusion, and the resulting carrier transport mechanism in both the electron and hole contacts of poly-Si/SiOx solar cells. Electron (n+ poly-Si/SiOx/substrate)- and hole (p+ poly-Si/SiOx/substrate)-selective passivating contacts are subjected to thermal annealing. Changes in the passivation properties and carrier transport mechanisms of these contacts are investigated during thermal annealing at various temperatures. Notably, the results demonstrate that the passivation properties and carrier transport mechanisms are strongly influenced by the microstructural evolution of the poly-Si/SiOx layer stack and dopant in-diffusion. Furthermore, electron and hole contacts exhibit common behaviors regarding microstructural evolution and dopant in-diffusion. However, the hole contacts exhibit relatively inferior electrical properties overall, mainly because both the SiOx interface and the p+ poly-Si are found to be highly defective. Moreover, boron in the hole contacts diffuses deeper than phosphorus in the electron contacts, resulting in deteriorated carrier collection. The experimental results are also supported by device simulation. Based on these findings, design rules are suggested for both electron and hole contacts, such as using thicker SiOx and/or annealing the solar cell at a temperature not exceeding the critical annealing temperature of the hole contacts.

RESUMEN

Organic electrochemical transistors (OECTs) have been increasingly explored for innovative electronic devices. However, they inherently demand two power suppliers, which is unfavorable for the utilization of portable and wearable systems with strict energy requirements. Herein, by assembling a monocrystalline silicon solar cell into the OECT circuit with light as fuel, we demonstrated the possibility of a self-powered and light-modulated operation of organic photoelectrochemical transistor (OPECT) optoelectronics. Exemplified by poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)-based depletion-mode and accumulation-mode OECTs, different light-addressable configurations were constructed, and the corresponding characteristics were systematically studied and compared. Different device behaviors with distinct characteristics could be achieved with the appropriate usage of light stimulation. Toward applications, optologics were designed with various parameters depending on the incident irradiance. Light-controlled OPECT unipolar inverters were further demonstrated and optimized with respect to the power source and resistance. This work features new OPECT optoelectronics combined with proper flexible substrates and solar cells for potential applications in portable and wearable devices. Electronic Supplementary Material: Supplementary material is available in the online version of this article at 10.1007/s40843-022-2295-8.

RESUMEN

A high-efficiency crystalline silicon-based solar cell in the visible and near-infrared regions is introduced in this paper. A textured TiO2 layer grown on top of the active silicon layer and a back reflector with gratings are used to enhance the solar cell performance. The given structure is simulated using the finite difference time domain (FDTD) method to determine the solar cell's performance. The simulation toolbox calculates the short circuit current density by solving Maxwell's equation, and the open-circuit voltage will be calculated numerically according to the material parameters. Hence, each simulation process calculates the fill factor and power conversion efficiency numerically. The optimization of the crystalline silicon active layer thickness and the dimensions of the back reflector grating are given in this work. The grating period structure of the Al back reflector is covered with a graphene layer to improve the absorption of the solar cell, where the periodicity, height, and width of the gratings are optimized. Furthermore, the optimum height of the textured TiO2 layer is simulated to produce the maximum efficiency using light absorption and short circuit current density. In addition, plasmonic nanoparticles are distributed on the textured surface to enhance the light absorption, with different radii, with radius 50, 75, 100, and 125 nm. The absorbed light energy for different nanoparticle materials, Au, Ag, Al, and Cu, are simulated and compared to determine the best performance. The obtained short circuit current density is 61.9 ma/cm2, open-circuit voltage is 0.6 V, fill factor is 0.83, and the power conversion efficiency is 30.6%. The proposed crystalline silicon solar cell improves the short circuit current density by almost 89% and the power conversion efficiency by almost 34%.

RESUMEN

This study reports an integrated device in which a lithium-ion battery (LIB) and Si solar cells are interconnected. The LIB is fabricated using the Li(Ni0.65Co0.15Mn0.20)O2 (NCM622) cathode and the Li4Ti5O12 (LTO) anode. The surface and shape morphologies of the NCM and LTO powders were investigated by field emission scanning electron microscopy (FE-SEM). In addition, the structural properties were thoroughly examined by X-ray diffraction (XRD). Further, their electrochemical characterization was carried out on a potentiostat. The specific discharge capacity of the NCM cathode (half-cell) was 188.09 mAh/g at 0.1 C current density. In further experiments, the NCM-LTO full-cell has also shown an excellent specific capacity of 160 mAh/g at a high current density of 1 C. Additionally, the capacity retention was outstanding, with 99.63% at 1 C after 50 cycles. Moreover, to meet the charging voltage requirements of the NCM-LTO full-cell, six Si solar cells were connected in series. The open-circuit voltage (VOC) and the short-circuit photocurrent density (JSC) for the Si solar cells were 3.37 V and 5.42 mA/cm2. The calculated fill factor (FF) and efficiency for the Si solar cells were 0.796 and 14.54%, respectively. Lastly, the integrated device has delivered a very high-power conversion-storage efficiency of 7.95%.

RESUMEN

Enhancement of the electromagnetic properties of metallic nanostructures constitute an extensive research field related to plasmonics. The latter term is derived from plasmons, which are quanta corresponding to longitudinal waves that are propagating in matter by the collective motion of electrons. Plasmonics are increasingly finding wide application in sensing, microscopy, optical communications, biophotonics, and light trapping enhancement for solar energy conversion. Although the plasmonics field has relatively a short history of development, it has led to substantial advancement in enhancing the absorption of the solar spectrum and charge carrier separation efficiency. Recently, huge developments have been made in understanding the basic parameters and mechanisms governing the application of plasmonics, including the effects of nanoparticles' size, arrangement, and geometry and how all these factors impact the dielectric field in the surrounding medium of the plasmons. This review article emphasizes recent developments, fundamentals, and fabrication techniques for plasmonic nanostructures while investigating their thermal effects and detailing light-trapping enhancement mechanisms. The mismatch effect of the front and back light grating for optimum light trapping is also discussed. Different arrangements of plasmonic nanostructures in photovoltaics for efficiency enhancement, plasmonics' limitations, and modeling performance are also deeply explored.

RESUMEN

In the current investigation, a series of NaCa1-x PO4 :xDy3+ (x = 0.1, 0.3, 0.5, 0.7, 1.0, 1.5 and 2 mol%) phosphors were synthesized using a solution combustion method and citric acid as fuel. The investigated results from the X-ray diffraction (XRD) pattern showed phase purity of the synthesized material and orthorhombic crystal structure with space group Pna21. Photoluminescence properties of the synthesized phosphors were investigated. The synthesized Dy3+ -activated phosphor displayed blue (482 nm) and yellow (576 nm) emission under near-ultraviolet or blue excitations. These emission bands were ascribed due to the 4 F9/2 →6 H15/2 and 4 F9/2 →6 H13/2 transitions of Dy3+ ions. Commission International de l'Eclairage chromaticity coordinates showed emission in the near-white region for the proposed phosphors under different excitations. In addition, the current-voltage (I-V) characteristics of the NaCa1-x PO4 :xDy3+ (x = 1.5 mol%) phosphor-coated silicon solar cell and an uncoated solar cell were investigated under a solar simulator. The I-V characteristics of the proposed phosphor-coated silicon solar cell showed enhancement in solar cell efficiency by ~7.92%. The entire studies and their outcomes showed that synthesized phosphors have potential as white light emitting diodes and for solar applications.

Asunto(s)

RESUMEN

Laser doping of silicon with the help of precursors is well established in photovoltaics. Upon illumination with the constant or pulsed laser beam, the silicon melts and doping atoms from the doping precursor diffuse into the melted silicon. With the proper laser parameters, after resolidification, the silicon is doped without any lattice defects. Depending on laser energy and on the kind of precursor, the precursor either melts or evaporates during the laser process. For high enough laser energies, even parts of the silicon's surface evaporate. Here, we present a unified model and simulation program, which considers all these cases. We exemplify our model with experiments and simulations of laser doping from a boron oxide precursor layer. In contrast to previous models, we are able to predict not only the width and depth of the patterns on the deformed silicon surface but also the doping profiles over a wide range of laser energies. In addition, we also show that the diffusion of the boron atoms in the molten Si is boosted by a thermally induced convection in the silicon melt: the Gaussian intensity distribution of the laser beam increases the temperature-gradient-induced surface tension gradient, causing the molten Si to circulate by Marangoni convection. Laser pulse energy densities above H > 2.8 J/cm2 lead not only to evaporation of the precursor, but also to a partial evaporation of the molten silicon. Without considering the evaporation of Si, it is not possible to correctly predict the doping profiles for high laser energies. About 50% of the evaporated materials recondense and resolidify on the wafer surface. The recondensed material from each laser pulse forms a dopant source for the subsequent laser pulses.

RESUMEN

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 °C which crystallizes the initially amorphous layer and diffuses dopants across the interfacial oxide into the wafer to facilitate charge transport, but it can also disrupt the SiOx layer necessary for wafer-surface passivation. To investigate the transport mechanism of the charge carriers through the selective contact and its changes during the annealing process, we utilize various characterization methods, such as transmission electron microscopy, micro Raman spectroscopy, and conductive atomic force microscopy. Combining the latter with a sequential removal of material, we assemble a tomographic reconstruction of the crystallized layer that reveals the presence of preferential vertical transport channels.

RESUMEN

High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiOx layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiOx layer, the charge carriers can cross this layer by tunneling (<2 nm SiOx thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiOx layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiOx contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiOx layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiOx layer. Our results show that the pinholes in the SiOx layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

RESUMEN

Silicon photovoltaic cells functionalized with water-splitting electrocatalysts are promising candidates for unassisted water splitting. In these devices, the total surface of silicon solar cells is covered with electrocatalysts, causing issues with (i) stabilizing silicon solar cells in water and (ii) device efficiency due to parasitic optical absorption in electrocatalysts. We describe and validate a water-splitting device concept using a crystalline silicon solar cell where the front side is covered with an insulating Si3N5 antireflection coating. The Ag contacts, fired through the antireflection coating, are removed and subsequently substituted with NiFe layered double hydroxide (LDH) or Cu/NiFe-LDH electrocatalysts. In this device, only the site of Ag contacts, nearly 2% of the total device area, is covered by the electrocatalyst. We found that this small area of the catalyst does not limit device performance and the addition of a Cu interlayer between Si and NiFe-LDH improves device performance and stability. The unassisted water-splitting efficiency of 11.31%, measured without separating the evolved gases, is achieved using a device composed of three series-connected silicon solar cells and an NiFe-LDH/Cu/Ni-foam counter electrode in a highly alkaline electrolyte.

RESUMEN

High-efficiency crystalline silicon (Si) solar cells require textured surfaces for efficient light trapping. However, passivation of a textured surface to reduce carrier recombination is difficult. Here, we relate the electrical properties of cells fabricated on a KOH-etched, random pyramidal-textured Si surface to the nanostructure of the passivated contact and the textured surface morphology. The effects of both microscopic pyramidal morphology and nanoscale surface roughness on passivated contacts consisting of polycrystalline Si (poly-Si) deposited on top of an ultrathin, 1.5-2.2 nm, SiOx layer are investigated. Using atomic force microscopy, we show a pyramid face, which is predominantly a Si(111) plane to be significantly rougher than a polished Si(111) surface. This roughness results in a nonuniform SiOx layer as determined by transmission electron microscopy of a poly-Si/SiOx contact. Our device measurements also show an overall more resistive and hence a thicker SiOx layer over the pyramidal surface as compared to a polished Si(111) surface, which we relate to increased surface roughness. Using electron-beam-induced current measurements of poly-Si/SiOx contacts, we further show that the SiOx layer near the pyramid valleys is preferentially more conducting and hence likely thinner than over pyramid tips, edges, and faces. Hence, both the microscopic pyramidal morphology and nanoscale roughness lead to a nonuniform SiOx layer, thus leading to poor poly-Si/SiOx contact passivation. Finally, we report >21% efficient and ≥80% fill-factor front/back poly-Si/SiOx solar cells on both single-side and double-side textured wafers without the use of transparent conductive oxide layers, and show that the poorer contact passivation on a textured surface is limited to boron-doped poly-Si/SiOx contacts.

RESUMEN

Tandem solar cells (SCs) based on perovskite and silicon represent an exciting possibility for a breakthrough in photovoltaics, enhancing SC power conversion efficiency (PCE) beyond the single-junction limit while keeping the production cost low. A critical aspect to push the tandem PCE close to its theoretical limit is the development of high-performing semitransparent perovskite top cells, which also allow suitable near-infrared transmission. Here, we have developed highly efficient semitransparent perovskite SCs (PSCs) based on both mesoporous and planar architectures, employing Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3 and FA0.87Cs0.13PbI2Br perovskites with band gaps of 1.58 and 1.72 eV, respectively, which achieved PCEs well above 17 and 14% by detailed control of the deposition methods, thickness, and optical transparency of the interlayers and the semitransparent electrode. By combining our champion 1.58 eV PSCs (PCE of 17.7%) with an industrial-relevant low-cost n-type Si SCs, a four-terminal (4T) tandem efficiency of 25.5% has been achieved. Moreover, for the first time, 4T tandem SCs' performances have been measured in the low light intensity regime, achieving a PCE of 26.6%, corresponding to revealing a relative improvement above 9% compared to the standard 1 sun illumination condition. These results are very promising for their implementation under field-operating conditions.

RESUMEN

Dopant-free carrier-selective contacts are becoming increasingly attractive for application in silicon solar cells because of the depositions for their fabrication being simpler and occurring at lower temperatures. However, these contacts are limited by poor thermal and environmental stability. In this contribution, the use of the conductive high work function of cuprous iodide, with its characteristic thermal and ambient stability, has enabled a hole-selective contact for p-type silicon solar cells because of the large conduction band offset and small valence offset at the CuI/p-Si interface. The contact resistivity (≈30 mΩ·cm2) of the Ag/CuI (20 nm)/p-Si contact after annealing to 200 °C represents the CuI-based hole-selective contact with low resistance and high thermal stability. Microscopic images and elemental mapping of the Ag/CuI/p-Si contact interface revealed that a nonuniform, continuous CuI layer separates the Ag electrode and p-type Si. Thermal treatment at 200 °C results in the intermixing of the Ag and CuI layers. As a result, the 200 °C thermal process improves the efficiency (20.7%) and stability of the p-Si solar cells featuring partial CuI hole-selective contact. Furthermore, the devices employing the CuI/Ag contact are thermally stable upon annealing to temperatures up to 350 °C. These results not only demonstrate the use of metal iodide instead of metal oxides as hole-selective contacts for efficient silicon solar cells but also have important implications regarding industrial feasibility and longevity for deployment in the field.

RESUMEN

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x, x < 3) with high stability and high performance is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm2). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x/Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x. Compared with the commercialized p-type solar cell, the novel CrO x-based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

RESUMEN

Solar cells, as promising devices for converting light into electricity, have a dramatically reduced performance on rainy days. Here, an energy harvesting structure that integrates a solar cell and a triboelectric nanogenerator (TENG) device is built to realize power generation from both sunlight and raindrops. A heterojunction silicon (Si) solar cell is integrated with a TENG by a mutual electrode of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film. Regarding the solar cell, imprinted PEDOT:PSS is used to reduce light reflection, which leads to an enhanced short-circuit current density. A single-electrode-mode water-drop TENG on the solar cell is built by combining imprinted polydimethylsiloxane (PDMS) as a triboelectric material combined with a PEDOT:PSS layer as an electrode. The increasing contact area between the imprinted PDMS and water drops greatly improves the output of the TENG with a peak short-circuit current of ∼33.0 nA and a peak open-circuit voltage of ∼2.14 V, respectively. The hybrid energy harvesting system integrated electrode configuration can combine the advantages of high current level of a solar cell and high voltage of a TENG device, promising an efficient approach to collect energy from the environment in different weather conditions.

RESUMEN

This paper demonstrates the application of a broadband luminescent downshifting (LDS) layer with multiple species of europium (Eu)-doped silicate phosphors using spin-on film technique to enhance the photovoltaic efficiency of crystalline silicon solar cells. The surface morphology of the deposited layer was examined using a scanning electron microscope (SEM). The chemical composition of the Eu-doped silicate phosphors was analyzed using energy-dispersive X-ray spectroscopy (EDS). The fluorescence emission of the Eu-doped silicate phosphors was characterized using photoluminescence (PL) measurements at room temperature. We also compared the optical reflectance and external quantum efficiency (EQE) response of cells with combinations of various Eu-doped phosphors species. The cell coated with two species of Eu-doped phosphors achieved a conversion efficiency enhancement (∆η) of 19.39%, far exceeding the ∆η = 15.08% of the cell with one species of Eu-doped phosphors and the ∆η = 8.51% of the reference cell with the same silicate layer without Eu-doped phosphors.

RESUMEN

In this study, we present a novel application of thin magnesium fluoride films to form electron-selective contacts to n-type crystalline silicon (c-Si). This allows the demonstration of a 20.1%-efficient c-Si solar cell. The electron-selective contact is composed of deposited layers of amorphous silicon (∼6.5 nm), magnesium fluoride (∼1 nm), and aluminum (∼300 nm). X-ray photoelectron spectroscopy reveals a work function of 3.5 eV at the MgF2/Al interface, significantly lower than that of aluminum itself (∼4.2 eV), enabling an Ohmic contact between the aluminum electrode and n-type c-Si. The optimized contact structure exhibits a contact resistivity of ∼76 mΩ·cm(2), sufficiently low for a full-area contact to solar cells, together with a very low contact recombination current density of ∼10 fA/cm(2). We demonstrate that electrodes functionalized with thin magnesium fluoride films significantly improve the performance of silicon solar cells. The novel contacts can potentially be implemented also in organic optoelectronic devices, including photovoltaics, thin film transistors, or light emitting diodes.

RESUMEN

Hybrid solar cells based on n-Si/poly(3,4-ethylenedioxythiophene):poly(styrene- sulfonate) (PEDOT:PSS) heterojunction promise to be a low cost photovoltaic technology by using simple device structure and easy fabrication process. However, due to the low conductivity of PEDOT:PSS, a metal grid deposited by vacuum evaporation method is still required to enhance the charge collection efficiency, which complicates the device fabrication process. Here, a solution-processed graphene oxide (GO)-welded silver nanowires (AgNWs) transparent conductive electrode (TCE) was employed to replace the vacuum deposited metal grid. A unique "sandwich" structure was developed by embedding an AgNW network between PEDOT:PSS and GO with a figure-of-merit of 8.6×10(-3) Ω(-1), which was even higher than that of sputtered indium tin oxide electrode (6.6×10(-3) Ω(-1)). A champion power conversion efficiency of 13.3% was achieved, because of the decreased series resistance of the TCEs as well as the enhanced built-in potential (Vbi) in the hybrid solar cells. The TCEs were obtained by facile low-temperature solution process method, which was compatible with cost-effective mass production technology.