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Increasing quantum confinement in semiconductor quantum dot (QD) systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build QD chains. Starting from 15 nm-thick and 65 nm-wide in-plane In0.53Ga0.47As nanowires on InP substrates, linear arrays of In0.53Ga0.47As QDs were grown on top, with tunable lengths and separations. Kelvin probe force microscopy performed at room temperature revealed a change of quantum confinement in chains with decreasing QD sizes, which was further emphasized by the spectral shift of quantum levels resolved in the conduction band with low temperature scanning tunneling spectroscopy. This approach, which allows the controlled formation of 25 nm-thick QDs with a minimum length and separation of 30 nm and 22 nm respectively, is suitable for the construction of scalable fermionic quantum lattices.
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We present the characterization of a pn-junction GaAs nanowire. For the characterization, current-voltage, electron-beam-induced current, cathodoluminescence, and electron holography measurements are used. We show that by combining information from these four methods, in combination with drift-diffusion modelling, we obtain a detailed picture of how the nanowire pn-junction is configured and how the recombination lifetime varies axially in the nanowire. We find (i) a constant doping concentration and 600 ps recombination lifetime in the n segment at the top part of the nanowire; (ii) a 200-300 nm long gradient in the p doping next to the pn-junction; and (iii) a strong gradient in the recombination lifetime on the p side, with 600 ps lifetime at the pn-junction, which drops to 10 ps at the bottom of the p segment closest to the substrate. We recommend such complementary characterization with multiple methods for nanowire-based optoelectronic devices.
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A method based on extraction of the effective absorption coefficient using Beer-Lambert's law on simulated transmissions is used to understand the optical absorption characteristics of semiconductor nanowire arrays. Three different semiconductor nanowire arrays, viz. silicon (Si), gallium arsenide (GaAs) and amorphous silicon (a-Si), are evaluated using the method. These semiconductors were chosen since two of them have similar real parts of the refractive index in the visible range, while the other two have comparable imaginary parts of the refractive index in the visible range. We examine the roles of the real and imaginary parts of the refractive index in enhancing the absorption characteristics in the nanowire arrays due to the excitation of radial and photonic Bloch modes. We observe that high absorption peaks at modal resonances correspond to the resonance peaks in reflections from the nanowire-air interface. Further, the wavelengths of these two peak resonances are slightly detuned according to the Kramers-Kronig relation for an oscillator system. The study confirms that the resonance wavelengths of radial HE modes are diameter and refractive index dependent. The study extends the understanding to the absorption characteristics due to the excitation of the photonic Bloch modes caused by near-field coupling. Excitation of Bloch modes leads to increased absorption and quality factor as compared to only radial mode excitation. We also conclude that the imaginary part of the refractive index of the semiconductor, influence the diameters at which Bloch modes are excited for a given lattice spacing. We observe that semiconductors with a higher bulk value of absorption coefficient need to be ordered more densely in the nanowire array to be able to excite the photonic crystal modes within the array. Interestingly, we see that for Si, GaAs and a-Si arrays with an equal diameter of 80 nm and lattice spacing of 400 nm, the peak absorption is almost the same, even though GaAs and a-Si are highly absorptive materials compared to Si. Thus, both radial and Bloch mode excitations can be used to design absorption profiles in a semiconductor nanowire array.
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Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.
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Thermal properties have an outsized impact on efficiency and sensitivity of devices with nanoscale structures, such as in integrated electronic circuits. A number of thermal conductivity measurements for semiconductor nanostructures exist, but are hindered by the diffraction limit of light, the need for transducer layers, the slow scan rate of probes, ultrathin sample requirements, or extensive fabrication. Here, we overcome these limitations by extracting nanoscale temperature maps from measurements of bandgap cathodoluminescence in GaN nanowires of <300 nm diameter with spatial resolution limited by the electron cascade. We use this thermometry method in three ways to determine the thermal conductivities of the nanowires in the range of 19-68 W/m·K, well below that of bulk GaN. The electron beam acts simultaneously as a temperature probe and as a controlled delta-function-like heat source to measure thermal conductivities using steady-state methods, and we introduce a frequency-domain method using pulsed electron beam excitation. The different thermal conductivity measurements we explore agree within error in uniformly doped wires. We show feasible methods for rapid, in situ, high-resolution thermal property measurements of integrated circuits and semiconductor nanodevices and enable electron-beam-based nanoscale phonon transport studies.
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Semiconductor nanowires offer a promising route of realizing nanolasers for the next generation of chip-scale optoelectronics and photonics applications. Established fabrication methods can produce vertical semiconductor nanowires which can themselves act both as a gain medium and as a Fabry-Pérot cavity for feedback. The lasing threshold in such nanowire lasers is affected by the modal confinement factor and end facet reflectivities, of which the substrate end reflectivity tends to be limited due to small refractive index contrast between the nanowire and substrate. These modal properties, however, also depend strongly on the modal field profiles. In this work, we use numerical simulations to investigate waveguide modes in vertical nanowire oligomers (that is, arrangements of few vertical nanowires close to each other) and their modal properties compared to single nanowire monomers. We solve for the oligomer waveguide eigenmodes which are understood as arising from interaction of monomer modes and further compute the reflectivity of these modes at the end facets of the nanowires. We consider either the nanowires or an additional coating layer as the gain medium. We show that both types of oligomers can exhibit modes with modal properties leading to reduced lasing threshold and also give directions for further research on the topic.
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In this work, the first observation of the space charge limited conduction mechanism (SCLC) in GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxial technique, and the effect of ultrahigh vacuum in-situ annealing have been investigated. The low onset voltage of the SCLC in the NW configuration has been advantageously exploited to extract trap density and trap distribution in the bandgap of this material system, using simple temperature dependent current-voltage measurements in both the ensemble and single nanowires. In-situ annealing in an ultra-high vacuum revealed significant reduction in the trap density from 1016 cm-3 in as-grown NWs to a low level of 7 * 1014 cm-3 and confining wider trap distribution to a single trap depth at 0.12 eV. A comparison of current conduction mechanism in the respective single nanowires using conductive atomic force microscopy (C-AFM) further confirms the SCLC mechanism identified in GaAsSb ensemble device to be intrinsic. Higher current observed in current mapping by C-AFM, increased 4K photoluminescence (PL) intensity along with reduced full-width half maxima and more symmetric PL spectra, reduced asymmetrical broadening and increased TO/LO mode in room temperature Raman spectra for in-situ annealed NWs again attest to effective annihilation of traps leading to the improved optical quality of NWs compared to as-grown NWs. Hence, the I-V-T analysis of the SCLC mechanism has been demonstrated to be a simple approach to obtain information on growth induced traps in the NWs.
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The growth of Sn-rich group-IV semiconductors at the nanoscale can enrich the understanding of the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge/GeSn core/shell nanowires by correlating the experimental observations with a theoretical interpretation based on a multiscale approach. We show that the cross-sectional morphology of Ge/GeSn core/shell nanowires changes from hexagonal to dodecagonal upon increasing the supply of the Sn precursor. This transformation strongly influences the Sn distribution as a higher Sn content is measured under the {112} growth front. Ab initio DFT calculations provide an atomic-scale explanation by showing that Sn incorporation is favored at the {112} surfaces, where the Ge bonds are tensile-strained. A phase-field continuum model was developed to reproduce the morphological transformation and the Sn distribution within the wire, shedding light on the complex growth mechanism and unveiling the relation between segregation and faceting. The tunability of the photoluminescence emission with the change in composition and morphology of the GeSn shell highlights the potential of the core/shell nanowire system for optoelectronic devices operating at mid-infrared wavelengths.
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Semiconductor nanowires are one of the most fascinating topics over the past few decades. As miniaturized coherent light sources, semiconductor nanowires have been attracting tremendous attention in recent years for scientific and technological interest as potential ultra-compact, low cost, high efficiency, and low power consumption. Among different types of lasers, one-dimensional nanowires are of great interest as a promising material for next-generation nanophotonics and nanoelectronics applications due to their unique optical and electrical properties. Semiconductor nanowire lasers with single-mode output are vital in a variety of practical applications ranging from signal processing, spectroscopy, displays, optical sensing, on-chip communications, and biological studies. This article reviews the basic technology and research progress of single-mode semiconductor nanowire lasers. Afterward, the key methods and development of the different types of coupling to achieved single-mode laser output are elaborated. Finally, the challenges faced by each scheme are summarized.
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The ability to tailor waveguide cavities and couple them with quantum emitters has developed a realm of nanophotonics encompassing, for example, highly efficient single photon generation or the control of giant photon nonlinearities. Opening new grounds by pushing the interaction of the waveguide cavity and integrated emitters further into the deep subwavelength regime, however, has been complicated by nonradiative losses due to the increasing importance of surface defects when decreasing cavity dimensions. Here, we show efficient suppression of nonradiative recombination for thin waveguide cavities using core-shell semiconductor nanowires. We experimentally reveal the advantages of such nanowires, which host mobile emitters, that is, free excitons, in a one-dimensional (1D) waveguide, highlighting the resulting potential for tunable, active, nanophotonic devices. In our experiment, controlling the nanowire waveguide diameter tunes the luminescence lifetime of excitons in the nanowires across 2 orders of magnitude up to 80 ns. At the smallest wire diameters, we show that this luminescence lifetime can be manipulated by engineering the dielectric environment of the nanowires. Exploiting this unique handle on the spontaneous emission of mobile emitters, we demonstrate an all-dielectric spatial control of the mobile emitters along the axis of the 1D nanowire waveguide.
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We have developed a novel fabrication method for flexible gas sensors for toxic gases based on sequential wet chemical reaction. In specific, zinc oxide (ZnO) nanowires were locally synthesized and directly integrated on a flexible polymer substrate using localized hydrothermal synthesis methods and their surfaces were selectively functionalized with palladium (Pd) nanoparticles using a liquid phase deposition process. Because the entire process is conducted at a low temperature in a mild precursor solution, it can be applied for flexible substrates. Furthermore, the surface of ZnO nanowires was sulfurized by hydrogen sulfide (H2S) gas to form zinc oxide/zinc sulfide (ZnO/ZnS) core-shell nanowires for stable sensing of H2S gas. The locally synthesized ZnO/ZnS core-shell nanowires enable an ultracompact-sized device, and Pd nanoparticles improve the sensing performance and reduce the operating temperature (200 °C). The device shows a high sensitivity [(Ggas - Gair)/Gair × 100% = 4491% to 10 ppm], fast response (response/recovery time <100 s) to hydrogen sulfide, and outstanding selectivity (>100 times) to other toxic gases (e.g., carbon monoxide, acetone, ethanol, and toluene). Moreover, vertically synthesized nanowires provide a long bending path, which reduces the mechanical stresses on the structure. The devices showed stable gas sensing performance under 9 mm positive radius of curvature and 5 mm negative radius of curvature. The mechanical robustness of the device was also verified by numerical simulations which showed dramatic decrease of maximum stress and strain to 4.2 and 5.0%, respectively.
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Developing highly efficient nanoscale coherent light sources is essential for advances in technological applications such as integrated photonic circuits, bioimaging, and sensing. An on-chip wavelength convertor based on second harmonic generation (SHG) would be a crucial step toward this goal, but the light-conversion efficiency would be low for small device dimensions. Here we demonstrate strongly enhanced SHG with a high conversion efficiency of 4 × 10-5 W-1 from a hybrid plasmonic waveguide consisting of a CdSe nanowire coupled with a Au film. The strong spatial overlap of the waveguide mode with the nonlinear material and momentum conservation between the incident and reflected modes are the key factors resulting in such high efficiency. The SHG emission angles vary linearly with excitation wavelength, indicating a nonlinear steering of coherent light emission at the subwavelength scale. Our work is promising for the realization of efficient and tunable nonlinear coherent sources and opens new approaches for efficient integrated nonlinear nanophotonic devices.
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Hybrid superconductor-semiconductor nanowires with Rashba spin-orbit coupling are arguably becoming the leading platform for the search of Majorana bound states (MBSs) in engineered topological superconductors. We perform a systematic numerical study of the low-energy Andreev spectrum and supercurrents in short and long superconductor-normal-superconductor junctions made of nanowires with strong Rashba spin-orbit coupling, where an external Zeeman field is applied perpendicular to the spin-orbit axis. In particular, we investigate the detailed evolution of the Andreev bound states from the trivial into the topological phase and their relation with the emergence of MBSs. Due to the finite length, the system hosts four MBSs, two at the inner part of the junction and two at the outer one. They hybridize and give rise to a finite energy splitting at a superconducting phase difference of π, a well-visible effect that can be traced back to the evolution of the energy spectrum with the Zeeman field: from the trivial phase with Andreev bound states into the topological phase with MBSs. Similarly, we carry out a detailed study of supercurrents for short and long junctions from the trivial to the topological phases. The supercurrent, calculated from the Andreev spectrum, is 2π-periodic in the trivial and topological phases. In the latter it exhibits a clear sawtooth profile at a phase difference of π when the energy splitting is negligible, signalling a strong dependence of current-phase curves on the length of the superconducting regions. Effects of temperature, scalar disorder and reduction of normal transmission on supercurrents are also discussed. Further, we identify the individual contribution of MBSs. In short junctions the MBSs determine the current-phase curves, while in long junctions the spectrum above the gap (quasi-continuum) introduces an important contribution.
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Silver iodide nanowires have been grown within tubular J-aggregates of the cyanine dye 3,3'-bis(2-sulfopropyl)-5,5',6,6'-tetrachloro-1,1'-dioctylbenzimida-carbo-cyanine (C8S3) from aqueous AgNO3 solutions. Crystal structure analysis by selected area electron diffraction (SAED), high resolution transmission electron microscopy (HRTEM) and energy-dispersive X-ray spectroscopy (EDXS) of single nanowires revealed that they are of silver iodide (AgI), while previously they were presumed to be of metallic silver. Iodine has not been added intentionally, but it is a remnant from the chemical synthesis of the dye and present in a dye:iodine ratio of almost 2:1, as revealed by inductively coupled plasma mass spectrometry (ICP-MS). The AgI wires grow as single crystals with lengths of several 10-100â¯nm and width of 6.5⯱â¯0.5â¯nm. The width and the orientation of the crystal relative to the aggregate axis are defined by the tubular structure of the templating dye aggregate. Caused by the nucleation at the tube wall the main growth is not along the usually preferred [0â¯0â¯0â¯1] direction but along the extension of the basal plane, which is furthermore tilted by an angle of 6°â¯±â¯2° against the main axis of the aggregate. This self-assembled system represents an organic-inorganic hybrid system with a well-defined semiconductor nanowire, AgI, that is strictly oriented with respect to the aggregated phase of conjugated molecules.
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The ability to control and structurally tune the optical resonances of semiconductor nanostructures has far-reaching implications for a wide range of optical applications, including photodetectors, (bio)sensors, and photovoltaics. Such control is commonly obtained by tailoring the nanostructure's geometry, material, or dielectric environment. Here, we combine insights from the field of coherent optics and metasurface mirrors to effectively turn Mie resonances on and off with high spatial control and in a polarization-dependent fashion. We illustrate this in an integrated device by manipulating the photocurrent spectra of a single-nanowire photodetector placed on a metasurface mirror. This approach can be generalized to control spectral, angle-dependent, absorption, and scattering properties of semiconductor nanostructures with an engineered metasurface and without a need to alter their geometric or materials properties.
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Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Al xIn1- xP nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite Al xIn1- xP using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.
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Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.
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Indium antimonide (InSb) enables diverse applications in electronics and optoelectronics. However, to date, there has not been a report on the synthesis of InSb nanowires (NWs) via a solution-phase strategy. Here, we demonstrate for the first time the preparation of high-quality InSb NWs with twinning superlattices from a mild solution-phase synthetic environment from the reaction of commercial triphenylantimony with tris(2,4-pentanedionato)-indium(III). This reaction occurs at low temperatures from 165 to 195 °C (optimized at â¼180 °C), which is the lowest temperature reported for the growth of InSb NWs to date. Investigations reveal that the InSb NWs are grown via a solution-liquid-solid (SLS) mechanism due to the catalysis of the initially formed indium droplets in the mild solution-phase reaction system. The twinning superlattices in the InSb NWs are determined with a pseudoperiodic length of â¼42 monolayers, which result from an oscillating self-catalytic growth related to the periodical fluctuation between reduction rate of In and Sb sources in the route. The optical pump-terahertz probe spectroscopic measurement suggests that the InSb NWs have potential for applications in high-speed optoelectronic nanodevices.
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Semiconductor nanowires are promising building blocks for next-generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically standing nanowires. In this work we provide a three-dimensional map of the light around vertical GaAs nanowires standing on a substrate by using fluorescence confocal microscopy, where the strong long-range disruption of the light path along the nanowire is illustrated. We find that the actual long-distance perturbation is much larger in size than calculated extinction cross sections. While the size of the perturbation remains similar, the intensity of the interaction changes dramatically over the visible spectrum. Numerical simulations allow us to distinguish the effects of scattering and absorption in the nanowire leading to these phenomena. This work provides a visual understanding of light absorption in semiconductor nanowire structures, which is of high interest for solar energy conversion applications.
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One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.