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MXenes are two-dimensional (2D) transition metal-based carbides, nitrides, and carbonitrides that are synthesized from its precursor MAX phase. The selective etching of the "A" from the MAX phase yields multi-functional MXenes that hold promise in a wide range of energy-based applications and biomedical applications. Based on its intended application, MXenes are prepared as multilayered sheets, monolayer flakes, and quantum dots. Conventionally, MXenes are prepared using hydrofluoric (HF) acid etching; however, the use of HF impedes its effective use in biomedical applications. This calls for the use of nontoxic HF-free synthesis protocols to prepare MXenes safe for biological use. Therefore, we have discussed a facile process to synthesize biocompatible, HF-free MXene nanosheets and quantum dots.

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In this work, the effect of etching the surface of polymer matrix nanocomposites with atmospheric pressure plasma targeting to achieve enhanced dielectric properties was investigated. Polymer nanocomposites, with varying reinforcing phase content, were modified by atmospheric-pressure plasma resulting in an increase in the surface filler's concentration. Polymethyl methacrylate (PMMA) matrix nanocomposites reinforced with zinc oxide (ZnO) nanoparticles were prepared and dielectrically studied as a function of the nanoparticle content and the plasma modified surfaces. The electrical response of the composite systems was studied by means of Broadband Dielectric Spectroscopy (BDS) over a wide range of temperatures and frequencies. The dielectric permittivity increased with the embedded phase content and with plasma surface treatment. Energy density followed the same trend as dielectric permittivity, and the plasma-treated nanocomposite with the higher ZnO content exhibited approximately 27% higher energy density compared to the unreinforced matrix.

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Since the discovery of graphene and its remarkable properties, researchers have actively explored advanced graphene-patterning technologies. While the etching process is pivotal in shaping graphene channels, existing etching techniques have limitations such as low speed, high cost, residue contamination, and rough edges. Therefore, the development of facile and efficient etching methods is necessary. This study entailed the development of a novel technique for patterning graphene through dry etching, utilizing selective photochemical reactions precisely targeted at single-layer graphene (SLG) surfaces. This process is facilitated by an excimer ultraviolet lamp emitting light at a wavelength of 172 nm. The effectiveness of this technique in selectively removing SLG over large areas, leaving the few-layer graphene intact and clean, was confirmed by various spectroscopic analyses. Furthermore, we explored the application of this technique to device fabrication, revealing its potential to enhance the electrical properties of SLG-based devices. One-dimensional (1D) edge contacts fabricated using this method not only exhibited enhanced electrical transport characteristics compared to two-dimensional contact devices but also demonstrated enhanced efficiency in fabricating conventional 1D-contacted devices. This study addresses the demand for advanced technologies suitable for next-generation graphene devices, providing a promising and versatile graphene-patterning approach with broad applicability and high efficiency.

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This study aimed to evaluate the microleakage of light-cured and self-cured adhesives on enamel surfaces selectively etched with Er, Cr: YSGG laser or 35% phosphoric acid. A total of 60 class V cavities were prepared 1 mm above the cemento-enamel junction (CEJ). The specimens were randomly divided into six groups. Group 1: Clearfil SE Bond with no conditioning, Group 2: Tokuyama Universal Bond with no conditioning, Group 3: Clearfil SE Bond conditioned with 35% phosphoric acid, Group 4: Tokuyama Universal Bond conditioned with 35% phosphoric acid, Group 5: Clearfil SE Bond conditioned with Er, Cr: YSGG laser and Group 6: Tokuyama Universal Bond conditioned with Er, Cr: YSGG laser. Microleakage was evaluated qualitatively (visually) and quantitatively (ImageJ). The data were analyzed using IBM SPSS V23 and submitted to Kruskal-Wallis and Wilcoxon tests. The significance level was set at p < 0.05. In all evaluation methods, the microleakage scores exhibit significant differences (p*<0.001). Group 1 and Group 3 exhibited similar and lower microleakage values than the Group 5. In the occlusal margin, the microleakage values were similar in Group 2, Group 4, and Group 6, whereas in the gingival margin Group 4 showed significantly lower leakage compared to Group 2. Regardless of the etching protocols and adhesive systems used, less microleakage was observed on the occlusal surface than on the gingival surface. Phosphoric acid etching provides better results than laser etching for enamel surface treatment on both occlusal and gingival surfaces.

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Selective oxidative etching is one of the most effective ways to prepare hollow nanostructures and nanocrystals with specific exposed facets. The mechanism of selective etching in noble metal nanostructures mainly relies on the different reactivity of metal components and the distinct surface energy of multimetallic nanostructures. Recently, phase engineering of nanomaterials (PEN) offers new opportunities for the preparation of unique heterostructures, including heterophase nanostructures. However, the synthesis of hollow multimetallic nanostructures based on crystal-phase-selective etching has been rarely studied. Here, a crystal-phase-selective etching method is reported to selectively etch the unconventional 4H and 2H phases in the heterophase Au nanostructures. Due to the coating of Pt-based alloy and the crystal-phase-selective etching of 4H-Au in 4H/face-centered cubic (fcc) Au nanowires, the well-defined ladder-like Au@PtAg nanoframes are prepared. In addition, the 2H-Au in the fcc-2H-fcc Au nanorods and 2H/fcc Au nanosheets can also be selectively etched using the same method. As a proof-of-concept application, the ladder-like Au@PtAg nanoframes are used for the electrocatalytic hydrogen evolution reaction (HER) in acidic media, showing excellent performance that is comparable to the commercial Pt/C catalyst.

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Magnesium metal batteries (MMBs), recognized as promising contenders for post-lithium battery technologies, face challenges such as uneven magnesium (Mg) plating and stripping behaviors, leading to uncontrollable dendrite growth and irreversible structural damage. Herein, we have developed a Mg foil featuring prominently exposed (002) facets and an architecture of nanosheet arrays (termed (002)-Mg), created through a one-step acid etching method. Specifically, the prominent exposure of Mg (002) facets, known for their inherently low surface and adsorption energies with Mg atoms, not only facilitates smooth nucleation and dense deposition but also significantly mitigates side reactions on the Mg anode. Moreover, the nanosheet arrays on the surface evenly distribute the electric field and Mg ion flux, enhancing Mg ion transfer kinetics. As a result, the fabricated (002)-Mg electrodes exhibit unprecedented long-cycle performance, lasting over 6000 h (>8 months) at a current density of 3 mA cm-2 for a capacity of 3 mAh cm-2. Furthermore, the corresponding pouch cells equipped with various electrolytes and cathodes demonstrate remarkable capacity and cycling stability, highlighting the superior electrochemical compatibility of the (002)-Mg electrode. This study provides new insights into the advancement of durable MMBs by modifying the crystal structure and morphology of Mg.

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MXenes have been attracting much attention since their introduction due to their amazing properties such as unique structure, good hydrophilicity, metal-grade electrical conductivity, rich surface chemistry, low ionic diffusion resistance, and excellent mechanical strength. It is noteworthy that different synthesis methods have a great influence on the structure and properties of MXenes. In recent years, some modification strategies of MXenes with unique insights have been developed with the increasing research. In summary, this paper reviews and summarizes the recent research progress of MXenes from the perspective of preparation processes (including hydrofluoric acid direct etching, fluoride/concentrated acid hybrid etching, fluoride melt etching, electrochemical etching, alkali-assisted etching and Lewis acid etching strategies), which can provide valuable guidance for the preparation and application of high-performance MXenes-based materials.

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Recently, zeolitic imidazolate frameworks (ZIFs) composites have emerged as promising precursors for synthesizing hollow-structured N-doped carbon-based noble-metal materials with diverse structures and compositions. Here, a strong/weak competitive coordination strategy is presented for synthesizing high-performance electrocatalysts with hollow features. During the competitive coordination process, the cubic zeolitic-imidazole framework-8 (Cube-8)@ZIF-67 with core-shell structures are transformed into Cube-8@ZIF-67@PF/POM with yolk-shell nanostructures employing phosphomolybdic acid (POM) and potassium ferricyanide (PF) as the strong chelator and the weak chelator, respectively. After calcination, the hollow Mo/Fe/Co@NC catalyst exhibits superior performance in both oxygen evolution reaction (OER) and oxygen reduction reaction (ORR). Interestingly, the Mo/Fe/Co@NC catalyst exhibits efficient electrocatalytic performance for Zn-air batteries (ZABs), with a high power density (≈150 mW cm-2) and superior cycling life (≈500 h) compared to commercial platinum/carbon (Pt/C) and ruthenium dioxide (RuO2) mixture benchmarks catalysts. In addition, the density functional theory further proves that after the introduction of Mo and Fe atoms, the adsorption energy with the adsorption intermediates is weakened by adjusting the d-band center, thus weakening the reaction barrier and promoting the reaction kinetics of OER. Undoubtedly, this study presents novel insights into the fabrication of ZIFs-derived hollow structure bifunctional oxygen electrocatalysts for clean-energy diverse applications.

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BACKGROUND: MXenes have attracted intensive attention owing to their unique twodimensional (2D) layered structure, high specific surface area, excellent conductivity, superior surface hydrophilicity, and chemical stability. In recent years, selective etching of the A element layers from MAX phases by fluorine-containing etchants (HF, LiF-HCl, etc) is a common method to prepare multilayered MXene nanomaterials (NMs) with plentiful surface terminations. At present, many studies have been reported on the use of fluorine-free etchants (NaOH, ZnCl2, etc) to etch MAX phases. The properties of MXene NMs are dependent on their structures. OBJECTIVE: The purpose of this review is to focus on a comprehensive and systematical survey on the preparation, structure modulation, and applications of MXene NMs in electrochemical energy storage devices, including supercapacitors, lithium-ion battery, sodium-ion battery, potassium-ion battery, and aluminum-ion battery. METHODS: Extensive information related to the preparation and applications of 2D MXene NMs for electrochemical energy storage and their associated patents were collected. This review highlights the recently reported 2D MXene NMs which are used in supercapacitor and various metal ion. RESULTS: It is found that the preparation methods have great impacts on the layer spacing and surface terminations of MXenes, consequently affecting their performance. Hence, this paper summarizes the research progress of the preparation strategies, layer spacing and surface termination modulation of MXene NMs. CONCLUSION: The applications of 2D MXene NMs in electrochemical energy storage are outlined. The forward-looking challenges and prospects for the development of MXenes are also proposed.

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CaO2 nanoparticles (CNPs) can produce toxic Ca2+ and H2O2 under acidic pH, which accounts for their intrinsic anticancer activity but at the same time raises safety concerns upon systemic exposure. Simultaneously realizing minimized Ca2+/H2O2 production and enhanced anticancer activity poses a dilemma. Herein, we introduce a "crystallinity gradient-based selective etching" (CGSE) strategy, which is realized by creating a crystallinity gradient in a CNP formed by self-assembled nanocrystals. The nanocrystals distributed in the outer layer have a higher crystallinity and thus are chemically more robust than those distributed in the inner layer, which can be selectively etched. CGSE not only leads to CNPs with tailored single- and double-shell hollow structures and metal-doped compositions but more surprisingly enables significantly enhanced anticancer activity as well as tumor growth inhibition under limited Ca2+/H2O2 production, which is attributed to an alkalinity-reinforced lysosome-dependent cell death pathway.

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The distribution of oxygen and aluminum vacancies across the hemispherical barrier oxide layer (BOL) of nanoporous anodic alumina (NAA) relies intrinsically on the electric field-driven flow of electrolytic species and the incorporation of electrolyte impurities during the growth of anodic oxide through anodization. This phenomenon provides new opportunities to engineer BOL's inherited ionic current rectification (ICR) fingerprints. NAA's characteristic ICR signals are associated with the space charge density gradient across BOL and electric field-induced ion migration through hopping from vacancy to vacancy. In this study, we engineer the intrinsic space charge density gradient of the BOL of NAA under a range of anodizing potentials in hard and mild anodization regimes. Real-time characterization of the ICR fingerprints of NAA during selective etching of the BOL makes it possible to unravel the distribution pattern of vacancies through rectification signals as a function of etching direction and time. Our analysis demonstrates that the space charge density gradient varies across the BOL of NAA, where the magnitude and distribution of the space charge density gradient are revealed to be critically determined by anodizing the electrolyte, regime, and potential. This study provides a comprehensive understanding of the engineering of ion transport behavior across blind-hole NAA membranes by tuning the distribution of defects across BOL through anodization conditions. This method has the potential to be harnessed for developing nanofluidic devices with tailored ionic rectification properties for energy generation and storage and sensing applications.

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MXenes are a large family of two-dimensional materials with a general formula Mn+1XnTz, where M is a transition metal, X = C and/or N, and Tz represents surface functional groups. MXenes are synthesized by etching A-elements from layered MAX phases with a composition of Mn+1AXn. As over 20 different chemical elements were shown to form A-layers in various MAX phases, we propose that they can provide an abundant source of very diverse MXene-based materials. The general strategy for A-modified MXenes relies on the synthesis of Mn+1A'1-xA″xXn MAX phase, in which the higher reactivity of the A'-element compared to that of A″ enables its selective etching, resulting in A″-modified Mn+1XnTz. In general, the A″-element could modify the interlayer spaces of MXene flakes in a form of metallic or oxide species, depending on its chemical identity and synthetic conditions. We demonstrate this strategy by synthesizing Sn-modified Ti3C2Tz MXene from the Ti3Al0.75Sn0.25C2 MAX phase, which was used as a model system. Although the incorporation of Sn in the A-layer of Ti3AlC2 decreases the MAX phase reactivity, we developed an etching procedure to completely remove Al and produce Sn-modified Ti3C2Tz MXene. The resulting MXene sheets were of very high quality and exhibited improved environmental stability, which we attribute to the effect of a uniform Sn modification. Finally, we demonstrate a peculiar electrostatic expansion of Sn-modified Ti3C2Tz accordions, which may find interesting applications in MXene-based nano-electromechanical systems. Overall, these results demonstrate that in addition to different combinations of M and X elements in MAX phases, an A-layer also provides opportunities for the synthesis of MXene-based materials.

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Nb2AlC/Nb2C MXene (NAC/NC) heterojunction photocatalysts with Schottky junctions were obtained by selective etching of the Al layer, resulting in 146.25 µmol·g-1 electrons and 15.28 µmol·g-1 holes stored in the heterojunction. The average conversion of NAC/NC thermally coupled photocatalytic reduction of CO2 under the simulated solar irradiation reached 110.15 µmol⋅g-1⋅h-1, and the CO selectivity reached over 92%, which was 1.49 and 1.74 times higher than that of pure Nb2AlC and Nb2C MXene, respectively. After light excitation, the localized surface plasmon resonance (LSPR) effect of holes distributed on the surface of Nb2C MXene crystals in the heterojunction will form high-energy thermal holes to dissociate H2 to H+ and reduce CO2 to form H2O at the same time. The high-energy electrons formed by the LSPR effect of Nb2C MXene and the conduction band electrons generated by the photoexcitation of Nb2C MXene can be migrated to Nb2AlC under the action of the interfacial Schottky junction to supplement the electrons needed for the LSPR effect of Nb2AlC, which continuously forms high-energy hot electrons to convert the adsorbed CO2 into *CO2-, b-HCO3, and HCOO. Subsequently, HCOO releases ⋅OH in a cyclic reaction to continuously reduce to form CO. The dual LSPR effect of Nb2AlC and Nb2C MXene is used to enhance the hydrogenation activity of thermally coupled photocatalytic reduction of CO2, which provides a new research idea for the application of MXene in thermally coupled photoreduction of CO2.

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High-quality few-layer M4 C3 Tx (M = V, Nb, Ta) MXenes are very important for applications and are necessary for clarifying their physicochemical properties. However, the difficulty in etching for themselves and the existence of MC/MC1-δ and M-Al alloy impurities in their M4 AlC3 precursors seriously hinder the achievement of defect-free few-layer M4 C3 Tx (M = V, Nb, Ta) MXenes nanosheets. Herein, three different defect-free few-layer M4 C3 Tx (M = V, Nb, Ta) nanosheets are obtained by using a universal synthesis strategy of calcination, selective etching, intercalation, and exfoliation. Comprehensive characterizations confirm their defect-free few-layer structure feature, large interlayer spacing (1.702-1.955 nm), types of functional groups (-OH, -F, -O), and abundant valance states (M5+ , M4+ , M3+ , M2+ , M0 ). M4 C3 Tx (M = V, Nb, Ta) free-standing films obtained by vacuum filtration of few-layer M4 C3 Tx inks show good hydrophilia, high thermostability, and conductivity. A roadmap on synthesis of defect-free few-layer M4 C3 Tx (M = V, Nb, Ta) nanosheets are proposed and three key points are summarized. This work provides detailed guidelines for the synthesis of other defect-free few-layer MXenes nanosheets, but also will stimulate extensive functional explorations for M4 C3 Tx (M = V, Nb, Ta) MXenes nanosheets in the future.

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Highly selective etching of silicon nitride over silicon oxide is one of the most important processes especially for the fabrication of vertical semiconductor devices including 3D NAND (Not And) devices. In this study, isotropic dry etching characteristics of SiNxand SiO2using ClF3/Cl2remote plasmas have been investigated. The increase of Cl2percent in ClF3/Cl2gas mixture increased etch selectivity of SiNxover SiO2while decreasing SiNxetch rate. By addition of 15% Cl to ClF3/Cl2, the etch selectivity higher than 500 could be obtained with the SiNxetch rate of ∼8 nm min-1, and the increase of Cl percent to 20% further increased the etch selectivity to higher than 1000. It was found that SiNxcan be etched through the reaction from Si-N to Si-F and Si-Cl (also from Si-Cl to Si-F) while SiO2can be etched only through the reaction from Si-O to Si-F, and which is also in extremely low reaction at room temperature. When SiNx/SiO2layer stack was etched using ClF3/Cl2(15%), extremely selective removal of SiNxlayer in the SiNx/SiO2layer stack could be obtained without noticeable etching of SiO2layer in the stack and without etch loading effect.

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Background and purpose The aesthetic requirements for the restoration of the primary anterior teeth of both the child and his parents increased recently, especially with the presence of materials with good mechanical properties capable of giving a good aesthetic shape. However, the challenge remains in the possibility of applying these materials to primary teeth, where the child's cooperation and ability to keep their mouth open during the completion of the restoration is an important challenge for the dentist. Therefore, this study aimed to evaluate the bonding of self-adhesive composite by studying the microleakage in primary canines. Materials and methods The studied sample consisted of 60 extracted primary canines that were divided into three equal groups (n=20) according to the type of restoration: group 1 (experimental) - self-adhesive composite alone, group 2 (experimental) - self-adhesive composite with selective enamel etching, and group 3 (control) - conventional composite with the self-etching bond and selective enamel etching. A Class V cavity was prepared at the cementoenamel junction, 2 mm deep and 1 mm in diameter. In this way, the gingival wall is dentine, while the incisal wall is enamel-dentine. Restorations were placed according to the group to which the tooth belongs. After that, all teeth were subjected to 500 cycles of thermocycling. Then, a methylene blue dye microleakage test was performed, and longitudinal sections of the teeth were made and studied under x20 magnification using a stereo microscope. Results In the gingival wall, the scores of microleakage in the conventional composite group after selective etching were lower than those of the self-adhesive composite groups, with a statistically significant difference. While in the incisal wall, there were no statistically significant differences in the frequencies of the scores of microleakage between the three groups. Conclusions Within the limitations of this study, the conventional composite bonded better to enamel and dentine than self-adhesive composite resin applied alone or after selective enamel etching. The bonding of the self-adhesive composite was lower than that of the conventional composite, and it is not recommended to use it in Class V restorations of primary anterior teeth.

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MXenes and MXene-based composite materials have potential applications in a wide range of areas due to their unique physical and chemical characteristics. At present, it is still a major challenge to develop a simple, safe, and efficient route to prepare MXenes without using fluorinated etchants. Herein, we design a facile method to prepare Ti3C2Tx MXene sheets by selectively etching Ti3AlC2 powders in an aqueous diluted H2SO4 solution with H2O2 as an oxidant. In a system of H2SO4 and H2O2, an aqueous H2SO4 solution with a concentration of 6 mol/L is a strongly acidic medium with no volatility, and 30% H2O2 acts as a strong green oxidizer without harmful by-products. The experimental process is safe and convenient to conduct in a beaker under a water bath of 40°C. The etching process can be completed in 1 h under the air atmosphere conditions. The experimental results confirmed that the etched Ti3AlC2 powders can be successfully separated into Ti3C2Tx nanosheets under ultrasound treatment without using any intercalation agent. The relevant etching mechanism is may be attributed to the synergy effect of H2SO4 and H2O2, which triggers sequential selective etching of Al layers from the Ti3AlC2 phase. It may provide a new green way to prepare MXene-based materials without using toxic HF or HF-containing etchants.

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In this paper, we investigate, using X-ray Bragg diffraction imaging and defect selective etching, a new type of extended defect that occurs in ammonothermally grown gallium nitride (GaN) single crystals. This hexagonal "honeycomb" shaped defect is composed of bundles of parallel threading edge dislocations located in the corners of the hexagon. The observed size of the honeycomb ranges from 0.05 mm to 2 mm and is clearly correlated with the number of dislocations located in each of the hexagon's corners: typically ~5 to 200, respectively. These dislocations are either grouped in areas that exhibit "diameters" of 100-250 µm, or they show up as straight long chain alignments of the same size that behave like limited subgrain boundaries. The lattice distortions associated with these hexagonally arranged dislocation bundles are extensively measured on one of these honeycombs using rocking curve imaging, and the ensemble of the results is discussed with the aim of providing clues about the origin of these "honeycombs".

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Owing to its low mechanical compliance, liquid metal is intrinsically suitable for stretchable electronics and future wearable devices. However, its invariable strain-resistance behavior according to the strain-induced geometrical deformation and the difficulty of circuit patterning limit the extensive use of liquid metal, especially for strain-insensitive wiring purposes. To overcome these limitations, herein, novel liquid-metal-based electrodes of fragmented eutectic gallium-indium alloy (EGaIn) and Ag nanowire (NW) backbone of which their entanglement is controlled by the laser-induced photothermal reaction to enable immediate and direct patterning of the stretchable electrode with spatially programmed strain-resistance characteristics are developed. The coexistence of fragmented EGaIn and AgNW backbone, that is, a biphasic metallic composite (BMC), primarily supports the uniform and durable formation of target layers on stretchable substrates. The laser-induced photothermal reaction not only promotes the adhesion between the BMC layer and substrates but also alters the structure of laser-irradiated BMC. By controlling the degree of entanglement between fragmented EGaIn and AgNW, the initial conductivity and local gauge factor are regulated and the electrode becomes effectively insensitive to applied strain. As the configuration developed in this study is compatible with both regimes of electrodes, it can open new routes for the rapid creation of complex stretchable circuitry through a single process.

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Wet chemical etching is essential not only for processing silicon (Si) wafers but also for forming diverse structures, significantly promoting the development of the semiconductor industry. However, tight control of etched topography at the nanoscale and even atom-scale in a controllable and reproducible fashion can be hardly achieved in either laboratory research or industrial production, seriously hindering further enhancement of high-performance Si-based electronic devices. Herein, the roles of mechanically driven defects in wet etching were systematically investigated toward promoting controllable wet etching of monocrystalline Si. The role of antietching of mechanically driven amorphous Si (a-Si) and the role of promoting etching of distorted Si (including dislocations and stacking faults) were revealed in anisotropic or isotropic etchants. It was also found that the nucleation of nanocrystals in the a-Si area with increasing contact pressure can lead to deactivation of the antietching mask, and the required contact pressure for deactivation in KOH and tetramethyl ammonium hydroxide solutions was much higher than that in HF/HNO3 mixtures. The selective etching mechanisms for every defect including a-Si, distorted Si, and nanocrystals were further addressed down to the atom-scale based on the proposed dissolution model. This study provides insights into deeply understanding the role of defects in wet etching and pushes forward the idea of controllable wet chemical etching in the Si-based semiconductor industry.