RESUMEN
The phase-transfer ligand exchange of PbS quantum dots (QDs) has substantially simplified device fabrication giving hope for future industrial exploitation. However, this technique when applied to QDs of large size (>4 nm) gives rise to inks with poor colloidal stability, thus hindering the development of QDs photodetectors in short-wavelength infrared range. Here, it is demonstrated that methylammonium lead iodide ligands can provide sufficient passivation of PbS QDs of size up to 6.7 nm, enabling inks with a minimum of ten-week shelf-life time, as proven by optical absorption and solution-small angle X-ray scattering. Furthermore, the maximum linear electron mobility of 4.7 × 10-2 cm2 V-1 s-1 is measured in field-effect transistors fabricated with fresh inks, while transistors fabricated with the same solution after ten-week storage retain 74% of the average starting electron mobility, demonstrating the outstanding quality both of the fresh and aged inks. Finally, photodetectors fabricated via blade-coating exhibit 76% external quantum efficiency at 1300 nm and 1.8 × 1012 Jones specific detectivity, values comparable with devices fabricated using ink with lower stability and wasteful methods such as spin-coating.
RESUMEN
Colloidal quantum dot (CQD) photodetectors (PDs) can detect wavelengths longer than the 1100 nm limit of silicon because of their highly tunable bandgaps. CQD PDs are acutely affected by the ligands that separate adjacent dots in a CQD-solid. Optimizing the exchange solution ligand concentration in the processing steps is crucial to achieving high photodetector performance. However, the complex mix of chemistry and optoelectronics involved in CQD PDs means that the effects of the exchange solution ligand concentration on device physics are poorly understood. Here we report direct correspondence between simulated and experimental transient photocurrent responses in CQD PDs. For both deficient and excess conditions, our model demonstrated the experimental changes to the transient photocurrent aligned with changes in trap state density. Combining transient photoluminescence, absorption, and photocurrent with this simulation model, we revealed that different mechanisms are responsible for the increased trap density induced by excess and deficient active layer ligand concentrations.
RESUMEN
Colloidal quantum dots (CQDs) have a unique advantage in realizing near-infrared (NIR) photodetection since their optical properties are readily tuned by the particle size, but CQD-based photodetectors (QPDs) presently show a high dark current density (Jd) and insufficient dynamic characteristics. To overcome these two problems, we synthesized and introduced two types of conjugated polymers (CPs) by replacing the p-type CQD layer in the QPDs. The low dielectric constant and insulating properties of CPs under dark conditions effectively suppressed the Jd in the QPDs. In addition, the energy-level alignment and high-hole mobility of the CPs facilitated hole transport. Therefore, both the responsivity and specific detectivity were highly enhanced in the CP-based QPDs. Notably, the dynamic characteristics of the QPDs, such as the -3 dB cut-off frequency and rising/falling response times, were significantly improved in the CP-based QPDs owing to the sizable molecular ordering and fast hole transport of the CP in the film state as well as the low trap density, well-aligned energy levels, and good interfacial contact in the CP-based devices.