RESUMEN
Indium-gallium-zinc oxide- and zinc oxynitride-based heterojunction phototransistors were successfully demonstrated to control the persistent photoconduction (PPC) effect and be also responded sensitively at the range from visible to near-infrared. ZnON plays a key role in extending the spectral response at various frequencies of operation. The devices show significantly different photoresponse and photorecovery characteristics depending on the number of stacked layers of IGZO and ZnON. After negative bias and illumination stress was applied to the devices for 1 h, tandem-structure-based phototransistors recovered remarkably better than single-component IGZO devices. We suggest that the improvements to photoresponse and photorecovery result from the presence of potential wells between two IGZO layers and the energy band alignment of the tandem structure.
RESUMEN
Amorphous oxide semiconductors have attracted attention in electronic device applications because of their high electrical uniformity over large areas, high mobility, and low-temperature process. However, photonic applications of oxide semiconductors are highly limited because of their larger band gap (over 3.0 eV). Here, we propose low band gap zinc oxynitride semiconductors not only because of their high electrical performance but also their high photoresponsivity in the vis-NIR regions. The optical band gap of zinc oxynitride films, which is in the range of 0.95-1.24 eV, could be controlled easily by changing oxygen and nitrogen ratios during reactive sputtering. Band gap tuned zinc oxynitride-based phototransistors showed significantly different photoresponse following both threshold voltage and drain current changes due to variation in nitrogen-related defect sites.