RESUMEN
Metallic bismuth (Bi) holds great promise in efficient conversion of carbon dioxide (CO2 ) into formate, yet the complicated synthetic routes and unobtrusive performance hinder the practical application. Herein, a facile galvanic-cell deposition method is proposed for the rapid and one-step synthesis of Bi nanodendrites. Compared to the traditional deposition method, it is found that the special galvanic-cell configuration can promote the exposure of low-angle grain boundaries. X-ray absorption spectroscopy, in situ characterizations and theoretical calculations indicate the electronical structures can be greatly tailored by the grain boundaries, which can facilitate the CO2 adsorption and intermediate formation. Consequently, the grain boundary-enriched Bi nanodendrites exhibit a high selectivity toward formate with an impressively high production rate of 557.2 µmol h-1 cm-2 at -0.94 V versus reversible hydrogen electrode, which outperforms most of the state-of-the-art Bi-based electrocatalysts with longer synthesis time. This work provides a straightforward method for rapidly fabricating active Bi electrocatalysts, and explicitly reveals the critical effect of grain boundary in Bi nanostructures on CO2 reduction.
RESUMEN
Nanolaminated structure with an average boundary spacing of 67 nm has been fabricated in copper by high-rate shear deformation at ambient temperature. The nanolaminated structure with an increased fraction of low angle grain boundaries exhibits a high microhardness of 2.1 GPa. The structure coarsening temperature is 180 K higher than that of its equiaxial nanograined counterpart. Formation of nanolaminated structure provides an alternative way to relax grain boundaries and to stabilize nanostructured metals with medium to low stacking faults energies besides activation of partial dislocations.
RESUMEN
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have revealed many novel properties of interest to future device applications. In particular, the presence of grain boundaries (GBs) can significantly influence the material properties of 2D TMDs. However, direct characterization of the electronic properties of the GB defects at the atomic scale remains extremely challenging. In this study, we employ scanning tunneling microscopy and spectroscopy to investigate the atomic and electronic structure of low-angle GBs of monolayer tungsten diselenide (WSe2) with misorientation angles of 3-6°. Butterfly features are observed along the GBs, with the periodicity depending on the misorientation angle. Density functional theory calculations show that these butterfly features correspond to gap states that arise in tetragonal dislocation cores and extend to distorted six-membered rings around the dislocation core. Understanding the nature of GB defects and their influence on transport and other device properties highlights the importance of defect engineering in future 2D device fabrication.