RESUMEN
The final structure and properties of layers grown by epitaxy techniques are determined in the very early stage of the process. This review describes one-dimensional models for epitaxial growth, emphasizing the basic theoretical concepts employed to analyze nucleation and aggregation phenomena in the submonolayer regime. The main findings regarding the evolution of quantities that define the properties of the system, such as monomer and island densities, and the associated island size, gap length, and capture zone distributions are discussed, as well as the analytical tools used to evaluate them. This review provides a concise overview of the most widely used algorithms for simulating growth processes, discusses relevant experimental results, and establishes connections with existing theoretical studies.
RESUMEN
Despite the remarkable theoretical applications of silicene, its synthesis remains a complex task, with epitaxial growth being one of the main routes involving depositing evaporated Si atoms onto a suitable substrate. Additionally, the requirement for a substrate to maintain the silicene stability poses several difficulties in accurately determining the growth mechanisms and the resulting structures, leading to conflicting results in the literature. In this study, large-scale molecular dynamics simulations are performed to uncover the growth mechanisms and characteristics of epitaxially grown silicene sheets on Au(111) and Au(110) substrates, considering different temperatures and Si deposition rates. The growth process has been found to initiate with the nucleation of several independent islands homogeneously distributed on the substrate surface, which gradually merge to form a complete silicene sheet. The results consistently demonstrate the presence of a buckled silicene structure, although this characteristic is notably reduced when using an Au(111) substrate. Furthermore, the analysis also focuses on the quality and growth mode of the silicene sheets, considering the influence of temperature and deposition rate. The findings reveal a prevalence of the Frank-van der Merwe growth mode, along with diverse forms of defects throughout the sheets.
RESUMEN
We explore the application of a two-step growth protocol to a one-dimensional colloidal model. The evolution of the system is described in terms of the time-dependence of both monomer and island densities,N1andN, while its structure is characterized by using distributions of the gap length, the capture zone, the inter-island distance, and the island length. Analytical results obtained from rate equations are compared with these from molecular dynamics simulations. Since the two-step growth protocol deals with nucleation and aggregation processes in two completely separated time regimes, it makes possible to gain better understanding and control on the island formation mechanism than the standard one-step protocol. The predicted features and advantages of the two-step process could be experimentally tested using deposition of colloidal spheres on pattern substrates.
RESUMEN
Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF4, H2 and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical deposition conditions, to determine if the conditions for producing µc-Si with the largest crystalline fraction (XC), will also result in epi-Si films that encompass the best quality and largest crystalline silicon (c-Si) fraction. Both characteristics are of importance for the development of thin film transistors (TFTs), thin film solar cells and novel 3D devices since epi-Si films can be grown or etched in a selective manner. Therefore, we have distinguished that the H2/SiF4 ratio affects the XC of µc-Si, the c-Si fraction in epi-Si films, and the structure of the epi-Si/c-Si interface. Raman and UV-Vis ellipsometry were used to evaluate the crystalline volume fraction (Xc) and composition of the deposited layers, while the structure of the films were inspected by high resolution transmission electron microscopy (HRTEM). Notably, the conditions for producing µc-Si with the largest XC are different in comparison to the fabrication conditions of epi-Si films with the best quality and largest c-Si fraction.