RESUMEN
Objective: Excessive hypertensive response to exercise testing is associated with adverse cardiovascular events such as left ventricular hypertrophy and atrial fibrillation (AF). In this study, we examined the relationship between electromechanical delay and excessive hypertensive response to exercise testing. Methods: Twenty-five people who had a hypertensive response to the exercise stress test and 28 people who were similar in age and gender with a normal blood pressure response in the exercise stress test as the control group were included in the study. Results: There was no statistical difference between the study groups in blood pressure holter values, conventional echocardiography findings, and exercise stress test findings. Lateral PA-TDI time (the time from the beginning of the P wave measured by tissue Doppler imaging to the beginning of the A' wave), left atrial electromechanical delay, and interatrial electromechanical delay were observed to be significantly longer in the hypertensive response group to exercise stress test compared with the control group (74.0±6.3 vs. 68.8±5.7, p=0.003; 24.7±7.0 vs. 19.6±7.1, p=0.013; 36.8±8.5 vs. 30.6±6.6, p=0.003, respectively). Conclusions: Early detection of electromechanical delay non-invasively may be useful in this patient group in predicting the development of new AF risk.
RESUMEN
Current state-of-the-art in situ transmission electron microscopy (TEM) characterization technology has been capable of statically or dynamically nanorobotic manipulating specimens, affording abundant atom-level material attributes. However, an insurmountable barrier between material attributes investigations and device-level application explorations exists due to immature in situ TEM manufacturing technology and sufficient external coupled stimulus. These limitations seriously prevent the development of in situ device-level TEM characterization. Herein, a representative in situ opto-electromechanical TEM characterization platform is put forward by integrating an ultra-flexible micro-cantilever chip with optical, mechanical, and electrical coupling fields for the first time. On this platform, static and dynamic in situ device-level TEM characterizations are implemented by utilizing molybdenum disulfide (MoS2 ) nanoflake as channel material. E-beam modulation behavior in MoS2 transistors is demonstrated at ultra-high e-beam acceleration voltage (300 kV), stemming from inelastic scattering electron doping into MoS2 nanoflakes. Moreover, in situ dynamic bending MoS2 nanodevices without/with laser irradiation reveals asymmetric piezoresistive properties based on electromechanical effects and secondary enhanced photocurrent based on opto-electromechanical coupling effects, accompanied by real-time monitoring atom-level characterization. This approach provides a step toward advanced in situ device-level TEM characterization technology with excellent perception ability and inspires in situ TEM characterization with ultra-sensitive force feedback and light sensing.