RESUMEN
The surge in hazardous volatile organic liquid emissions driven by the rapid growth of the manufacturing industry has compelled a rising demand for gas sensors, which exhibit remarkable sensitivity, selectivity, and room temperature operation. Ternary metal oxide spinel has indeed garnered significant attention in chemi-resistive gas sensors due to their large reactive surface area, physicochemical, and other unique properties. In this work, we have studied chemically sprayed pristine and Cd 2+ incorporated Co2SnO4 thin film as a sensing layer under room temperature (300 K) conditions. The 5 wt% Cd 2+ incorporated Co2SnO4 films unveiled a high sensor response to dimethylamine (DMA) gas (S = Igas/Iair = 6153 at 1 ppm), which was boosted by 8.89-fold times compared to pristine Co2SnO4 film, due to the large reactive surface area and enhanced defective oxygen vacancies. It has superior selectivity towards DMA gas, good response time (154 s) / recovery time (90 s), superior pro-longevity (S = 6138) after 60 days, stable repeatability (7 cycles), excellent cross-selectivity, and relative humid resistance at 300 K. This research work provides insights on Cd 2+ incorporated Co2SnO4 thin films and their feasibility in real-time gas sensing devices.
RESUMEN
In this study, zinc-doped (α-Fe2O3:Zn), silver-doped (α-Fe2O3:Ag) and zinc/silver co-doped hematite (α-Fe2O3:Zn/Ag) nanostructures were synthesized by spray pyrolysis. The synthesized nanostructures were used as photoanodes in the photoelectrochemical (PEC) cell for water-splitting. A significant improvement in photocurrent density of 0.470 mAcm-2 at 1.23 V vs. reversible hydrogen electrode (RHE) was recorded for α-Fe2O3:Zn/Ag. The α-Fe2O3:Ag, α-Fe2O3:Zn and pristine hematite samples produced photocurrent densities of 0.270, 0.160, and 0.033 mAcm-2, respectively. Mott-Schottky analysis showed that α-Fe2O3:Zn/Ag had the highest free carrier density of 8.75 × 1020 cm-3, while pristine α-Fe2O3, α-Fe2O3:Zn, α-Fe2O3:Ag had carrier densities of 1.57 × 1019, 5.63 × 1020, and 6.91 × 1020 cm-3, respectively. Electrochemical impedance spectra revealed a low impedance for α-Fe2O3:Zn/Ag. X-ray diffraction confirmed the rhombohedral corundum structure of hematite. Scanning electron microscopy micrographs, on the other hand, showed uniformly distributed grains with an average size of <30 nm. The films were absorbing in the visible region with an absorption onset ranging from 652 to 590 nm, corresponding to a bandgap range of 1.9 to 2.1 eV. Global analysis of ultrafast transient absorption spectroscopy data revealed four decay lifetimes, with a reduction in the electron-hole recombination rate of the doped samples on a timescale of tens of picoseconds.
RESUMEN
Extremely thin absorber (ETA) solar cells made of ZnO/TiO2/Sb2S3 core-shell nanowire heterostructures, using P3HT as the hole-transporting material (HTM), are of high interest to surpass solar cell efficiencies of their planar counterpart at lower material cost. However, no dimensional optimization has been addressed in detail, as it raises material and technological critical issues. In this study, the thickness of the Sb2S3 shell grown by chemical spray pyrolysis is tuned from a couple of nanometers to several tens of nanometers, while switching from a partially to a fully crystallized shell. The Sb2S3 shell is highly pure, and the unwanted Sb2O3 phase was not formed. The low end of the thickness is limited by challenges in the crystallization of the Sb2S3 shell, as it is amorphous at nanoscale dimensions, resulting in the low optical absorption of visible photons. In contrast, the high end of the thickness is limited by the increased density of defects in the bulk of the Sb2S3 shell, degrading charge carrier dynamics, and by the incomplete immersion of the P3HT in the structure, resulting in the poor hole collection. The best ETA solar cell with a short-circuit current density of 12.1 mA/cm2, an open-circuit voltage of 502 mV, and a photovoltaic conversion efficiency of 2.83% is obtained for an intermediate thickness of the Sb2S3 shell. These findings highlight that the incorporation of both the absorber shell and HTM in the core-shell heterostructures relies on the spacing between individual nanowires. They further elaborate the intricate nature of the dimensional optimization of an ETA cell, as it requires a fine-balanced holistic approach to correlate all the dimensions of all the components in the heterostructures.
RESUMEN
The molybdenum trioxide (MoO3) thin films have been successfully deposited onto the glass substrates using chemical spray pyrolysis (CSP) deposition technique at various substrate temperatures ranging from 300°C to 450°C with an interval of 50°C. The effect of substrate temperature on the structural, morphological, optical and gas sensing properties of MoO3 thin films has been thoroughly investigated. X-ray diffraction analysis reveals that all the films have an orthorhombic crystal structure and are polycrystalline in nature. FE-SEM micrographs depict the formation of nanobelts-like morphology. AFM study reveals that the RMS surface roughness of MoO3 thin films increases from 8.6nm to 12nm with increase in substrate temperature from 300°C to 400°C and then decreases to 11.5nm for substrate temperature of 450°C. Optical results show that the band gap of MoO3 thin films decreases from 3.92eV to 3.44eV. The selectivity studies show that the gas response of various gases varies as NH3
RESUMEN
Chemical spray pyrolysis (CSP) is a fast wet-chemical deposition method in which an aerosol is guided by carrier gas onto a hot substrate where the decomposition of the precursor chemicals occurs. The aerosol is produced using an ultrasonic oscillator in a bath of precursor solution and guided by compressed air. The use of the ultrasonic CSP resulted in the growth of homogeneous and well-adhered layers that consist of submicron crystals of single-phase Sb2S3 with a bandgap of 1.6 eV if an abundance of sulfur source is present in the precursor solution (SbCl3/SC(NH2)2 = 1:6) sprayed onto the substrate at 250 °C in air. Solar cells with glass-ITO-TiO2-Sb2S3-P3HT-Au structure and an active area of 1 cm2 had an open circuit voltage of 630 mV, short circuit current density of 5 mA/cm2, a fill factor of 42% and a conversion efficiency of 1.3%. Conversion efficiencies up to 1.9% were obtained from solar cells with smaller areas.
RESUMEN
For the first time, a new facile approach based on simple and inexpensive chemical spray pyrolysis (CSP) technique is used to deposit Tungsten (W) doped nanocrystalline SnO2 thin films. The textural, optical, structural and sensing properties are investigated by GAXRD, UV spectroscopy, FESEM, AFM, and home-built sensing setup. The gas sensing results indicate that, as compared to pure SnO2, 1 wt % W-doping improves sensitivity along with better response (<2 s) and recovery time (<25 s) toward NO2 gas at operating temperatures of â¼225 °C. The optimal composition of 1 wt % W-doped films exhibit lowest crystallite size of the order of â¼8-10 nm with reduced energy band gap and large roughness values of 3.82 eV and 3.01 nm, respectively. Reduction in texture coefficient along highly dense (110) planes with concomitant increase along loosely packed (200) planes is found to have prominent effect on gas sensing properties of W-doped films.
RESUMEN
Solar cells consisting of an extremely thin In2S3/CuInS2 buffer/absorber layer uniformly covering planar ZnO were prepared entirely by chemical spray pyrolysis. Au nanoparticles (Au-NPs) were formed via thermal decomposition of a gold(III) chloride trihydrate (HAuCl4·3H2O) precursor by spraying 2 mmol/L of the aqueous precursor solution onto a substrate held at 260 °C. Current-voltage scans and external quantum efficiency spectra were used to evaluate the solar cell performance. This work investigates the effect of the location of the Au-NP layer deposition (front side vs rear side) in the solar cell and the effect of varying the volume (2.5-10 mL) of the sprayed Au precursor solution. A 63% increase (from 4.6 to 7.5 mA/cm(2)) of the short-circuit current density was observed when 2.5 mL of the precursor solution was deposited onto the rear side of the solar cell.