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A new tripodal tris(hydroxycoumarin) based Schiff base, HCTN was synthesized and characterized by FT-IR, 1H NMR, 13C NMR and ESI-HRMS. The probe, HCTN exhibits cyan emission in DMSO/HEPES buffer (9:1, v/v) which selectively detects Cu2+ ion via turn-off fluorescence. The quenching of the fluorescence was due to the binding of the probe, HCTN towards paramagnetic Cu2+ ion resulting in chelation enhanced quenching effect (CHEQ). From the spectroscopic results, the limit of detection of Cu2+ ion was obtained as very low as 0.40 × 10-9 M. The complexation of the metal ion, Cu2+ towards the probe HCTN was confirmed by the ESI-HRMS and Job's plot analysis which supports 1:1 binding stochiometric ratio. In order to validate the affinity of Cu2+ ion towards histidine, the HCTN+Cu2+ system was utilized for the detection of histidine via turn-on mode by the metal displacement approach. The detection limit of His was found to be 7.31 × 10-10 M. In addition to the above, the probe was utilized for various detection applications such as paper strips, cotton swabs, logic gates and thin film applications. The probe, HCTN extends its application to the confocal bioimaging to sense the Cu2+ and Histidine intracellularly.

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In the field of electronic and optoelectronic applications, two-dimensional materials are found to be the promising candidates for futuristic devices. For the detection of infrared light, MoTe2 possesses an appropriate bandgap for which p-MoTe2/n-Si heterojunctions are suits well for photodetectors. In this study, rapid thermal technique is used to grow MoTe2 thin films on silicon (Si) substrates. Molybdenum (Mo) thin films were deposited using sputtering system on Si substrate and Tellurium (Te) film was deposited on Mo film by thermal evaporation technique. The substrates with Mo/Te thin films are kept in a face-to-face manner inside the RTP furnace. The growth was carried out at a base pressure of 2 torr with the flow of 160 sccm argon gas at different temperatures ranging from 400 °C to 700 °C. The XRD peaks appeared around 2θ = 12.8°, 25.5°, 39.2°, 53.2° corresponding to (002), (004), (006) and (008) orientation of hexagonal 2H-MoTe2 structure. The characteristic Raman peaks of MoTe2,observed at ~119 cm-1 and ~172 cm-1,corresponds to in-plane E1g and out-of-plane A1g mode of MoTe2, whereas the prominent peaks of the in-plane E12g mode at ∼234 cm-1, and the out-of-plane B12g mode at ∼289 cm-1 are also observed. RMS roughness is found to be increasing with increasing growth temperature. The bandgap of MoTe2 is calculated using Tauc plot and found to be 0.91 eV. Electrical characterizations are carried out using current-voltage and current-time measurement, where the maximum responsivity and detectivity are found to be 127.37 mA/W and 85.21 × 107 Jones for growth temperature of 600 °C and IR wavelength illumination of 1060 nm. .

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ZnO film ultrasonic transducers for temperature and stress measurements with dual-mode wave excitation (longitudinal and shear) were deposited using the reactive RF magnetron sputtering technique on Si and stainless steel substrates and construction steel bolts. It was found that the position in the substrate plane had a significant effect on the structure and ultrasonic performance of the transducers. The transducers deposited at the center of the deposition zone demonstrated a straight columnar structure with a c-axis parallel to the substrate normal and the generation of longitudinal waves. The transducers deposited at the edge of the deposition zone demonstrated inclined columnar structures and the generation of dominant shear or longitudinal shear waves. Transducers deposited on the bolts with dual-wave excitation were used to study the effects of high temperatures in the range from 25 to 525 °C and tensile stress in the range from 0 to 268 MPa on ultrasonic response. Dependencies between changes in the relative time of flight and temperature or axial stress were obtained. The dependencies can be described by second-order functions of temperature and stress. An analysis of the contributions of thermal expansion, strain, and the speed of sound to changes in the time of flight was performed. At high temperatures, a decrease in the signal amplitude was observed due to the decreasing resistivity of the transducer. The ZnO ultrasonic transducers can be used up to temperatures of ~500 °C.

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Accurate measurement of the pretightening stress for bolts has great significance for improving the assembly quality and safety, especially in severe environments. In this study, AlN thin film transducers were deposited on GH4169 nickel base alloy bolts using the RF magnetron sputtering, enabling a systematic investigation into the correlation between structures and the intensity of ultrasonic echo signals. Employing the finite element method resulted in consistency with the experimental data, enabling further exploration of the enhancement mechanism. With the increasing thickness of both the piezoelectric layer and the electrode layer, the intensity of the ultrasonic echo signals saw a great enhancement. The maximum-intensity observed increase is 14.7 times greater than that of the thinnest layers. Specifically, the thicker piezoelectric layer improves its mechanical displacement, while the increased thickness of the electrode layer contributes to better densification. An electrode diameter of nearly 4 mm is optimal for an AlN thin film transducer of M8 bolts. For pretightening the stress measurement, the sample with a strong and stable echo signal shows a low measurement error of pretightening below ±2.50%.

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Wide-gap Cu(In,Ga)Se2 (CIGS) solar cells exhibit a superior match to the solar spectrum, resulting in a higher ideal efficiency (E ff). However, in reality, their device E ff is lower than that of narrow-gap CIGS solar cells. This study aims to identify the factors that limit the performance enhancement of wide-gap CIGS solar cells, focusing on the characteristics of the buffer layer. The influence of the thickness and doping concentration of the CdS layer on the built-in electric field and interfacial recombination of the heterojunction has been investigated through simulation. The simulation results indicate that when the doping concentration of the CdS layer is lower than or similar to that of the CGS layer, decreasing the thickness of the CdS layer (e.g., 10 nm) is beneficial for improving device performance. However, if it is higher than that of the CGS layer, increasing the thickness of the CdS layer (e.g., 50 nm) is conducive to improving device performance. The thickness of the CdS layer that maximizes the E ff of the wide-gap CGS device should be approximately 50 nm, and its doping concentration should be higher than that of the CGS layer. This optimization can simultaneously enhance the built-in electric field of the heterojunction and minimize its interfacial recombination, thereby improving the open-circuit voltage and E ff of wide-gap CGS devices.

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Renal sympathetic nerves play a crucial role in the pathogenesis of hypertension, and renal denervation (RDN) is a new solution for patients with refractory hypertension. However, current RDN techniques show inconsistent results in clinical application probably owing to incomplete endovascular ablation of the sympathetic nerves and a lack of measures to localize and assess efficacy. In this study, a closed-loop RDN system consisting of a sensing unit with a piezoelectric thin-film sensor (PTFS) and a treatment unit with a hollow Pd nanoparticle shell (PdNPS) with a diameter of 202.0 nm for photothermal neural ablation is constructed. The PTFS can monitor and collect arterial pulsation and blood pressure (BP) and direct PdNPS to maximize RDN. PdNPS maintains a local temperature of 58-62 °C under near-infrared-II irradiation (1,064 nm) to achieve effective RDN within a range of 90-120 s treatment window. Photothermal ablation significantly inhibits the activities of renal sympathetic nerves post-procedure and after one month and reduces the elevation of BP by > 50%. The novel closed-loop system enables safe and efficient targeting, dynamic monitoring, and ablation of the renal sympathetic nerves. This closed-loop system provides a new strategy for RDN technology and even for treating sympathetic nerve-related chronic diseases.

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Second-order nonlinearity gives rise to many distinctive physical phenomena, e.g., second-harmonic generation, which play an important role in fundamental science and various applications. Lithium niobate, one of the most widely used nonlinear crystals, exhibits strong second-order nonlinear effects and electro-optic properties. However, its moderate refractive index and etching sidewall angle limit its capability in confining light into nanoscales, thereby restricting its application in nanophotonics. Here, we exploit nanocavities formed by second-order circular Bragg gratings, which support resonant anapole modes, to achieve a 42 000-fold enhanced second-harmonic generation in thin-film lithium niobate. The nanocavity exhibits a record-high normalized conversion efficiency of 1.21 × 10-2 cm2/GW under the pump intensity of 1.9 MW/cm2. Besides, we also show s- and p-polarization-independent second-harmonic generation in elliptical Bragg nanocavities. This work could inspire the study of nonlinear optics at the nanoscale on thin-film lithium niobate, as well as other novel photonic platforms.

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Nanomaterials are known as the most promising materials of the 21st century, among which nanofibers have become a hot research and development topic in academia and industry due to their high aspect ratio, high specific surface area, high molecular orientation, high crystallinity, excellent mechanical properties, and many other advantages. Electrospinning is the most important preparation method for nanofibers and their thin membranes due to its controllability, versatility, low cost, and simplicity. Adding nanofillers such as ceramics, metals, and carbon materials to the electrospinning polymer solutions to prepare composites can further improve the mechanical strength and multi-functionality of nanofibers and their thin membranes and also provide possibilities for their widespread applications. Based on the rapid development in the field of polymer composite nanofibers, this review focuses on polyurethane (PU)-based composite nanofibers as the main representative and reviews their latest practical applications in many fields such as sound-absorbing materials, biomedical materials (including tissue engineering implants, drug delivery systems, wound dressings and other anti-bacterial materials, health materials, etc.), wearable sensing devices and energy harvesters, adsorbent materials, electromagnetic shielding materials, and reinforcement materials. Finally, a summary of their performance-application relationship and prospects for further development are given. This review is expected to provide some practical experience and theoretical guidance for further developments in related fields.

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Embedding quantum dots into porous matrices is a very beneficial approach for generating hybrid nanostructures with unique properties. In this contribution we explore strategies to dope nanoporous SiO2 thin films made by atomic layer deposition and selective wet chemical etching with precise control over pore size with CdSe quantum dots. Two distinct strategies were employed for quantum dot deposition: in situ growth of CdSe nanocrystals within the porous matrix via successive ionic layer adsorption reaction, and infiltration of pre-synthesized quantum dots. To address the impact of pore size, layers with 10 nm and 30 nm maximum pore diameter were used as the matrix. Our results show that though small pores are potentially accessible for the in situ approach, this strategy lacks controllability over the nanocrystal quality and size distribution. To dope layers with high-quality quantum dots with well-defined size distribution and optical properties, infiltration of preformed quantum dots is much more promising. It was observed that due to higher pore volume, 30 nm porous silica shows higher loading after treatment than the 10 nm porous silica matrix. This can be related to a better accessibility of the pores with higher pore size. The amount of infiltrated quantum dots can be influenced via drop-casting of additional solvents on a pre-drop-casted porous matrix as well as via varying the soaking time of a porous matrix in a quantum dot solution. Luminescent quantum dots deposited via this strategy keep their luminescent properties, and the resulting thin films with immobilized quantum dots are suited for integration into optoelectronic devices.

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HYPOTHESIS: The structural details of foams made with pea albumins are affected by the pH of the initial solution and followed heat treatment. EXPERIMENTS: An in situ, time-resolved investigation of foams prepared with pea albumins was conducted using small-angle neutron scattering (SANS) in combination with imaging and conductance measurements. Solutions were tested at pH three pH values (3, 4.5, and 8) before and after heating (90 °C for 1 and 5 min). FINDINGS: The characteristic structures present in the foam from the nano to the meso-scale differed during drainage depending on solution pH. Foams obtained at pH 3, had the largest bubble radius and thinnest plateau border, as well as the highest extent of liquid drainage. At pH 4.5, close to the isoelectric point of the proteins, foams displayed similar bubbles' behavior to those at pH 8, but with the largest film thickness. In this case, the proteins were extensively aggregated. Heating of the solutions prior to foaming did not significantly affect the foam aging regardless of pH. The quantification of specific surface areas and film thickness over time without sample disruption shows to be a powerful approach to designing foam structures.

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Oxide semiconductor thin-film transistors (TFTs) have shown great potential in emerging applications such as flexible displays, radio-frequency identification tags, sensors, and back-end-of-line compatible transistors for monolithic 3D integration beyond their well-established flat-plane display technology. To meet the requirements of these appealing applications, high current drivability is essential, necessitating exploration in materials science and device engineering. In this work, we report for the first time on a simple solution-based superacid (SA) treatment to enhance the current drivability of top-gate TiO2 TFTs with a gate-offset structure. The on-current of these transistors is limited by the relatively low mobility of TiO2 due to its d-orbital conduction nature. It is found that the on-current of TiO2 TFTs is nearly doubled via a quick dip in a SA solution at room temperature in ambient air. A series of experiments, including comparative I-V measurements of TFTs with different treatments and gate structures, C-V measurements, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and device simulation, were performed to uncover the underlying reason for the current enhancement. It is believed that the protons (H+) from SA are doped into the offset region of TiO2 TFTs, forming an electron double layer and thus boosting the on-current, with the top gate serving as a self-aligned mask for ionic doping. Furthermore, the ionic size and the proportion of the offset region to the channel play crucial roles in the effectiveness of ionic doping, while the position of the incorporated ions, whether in the channel or dielectric, may result in distinct shifts in the turn-on voltage (VON) and affect the functionality of ionic doping. This study provides a pathway for enhancing the current drivability of TiO2 TFTs via selective ionic doping enabled by SA treatment and deepens our understanding of ion incorporation in electronic devices. This approach could be applicable to other material systems and may also benefit TFTs with miniaturized dimensions, thus opening up unprecedented opportunities for TiO2 TFTs in future applications requiring high current drivability.

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Changes in bond types and the reversible switching process between metavalent and covalent bonds are related to the operating mechanism of the phase-change (PC) behavior. Thus, controlling the bonding characteristics is the key to improving the PC memory performance. In this study, we have controlled the bonding characteristics of GeTe/Sb2Te3 superlattices (SLs) via bismuth (Bi) doping. The incorporation of Bi into the GeTe sublayers tailors the metavalent bond. We observed significant improvement in device reliability, set speed, and power consumption induced upon increasing Bi incorporation. The introduction of Bi was found to suppress the change in density between the SET and RESET states, resulting in a significant increase in device reliability. The reduction in Peierls distortion, leading to a more octahedral-like atomic arrangement, intensifies electron-phonon coupling with increased bond polarizability, which are responsible for the fast set speed and low power consumption. This study demonstrates how the structural and thermodynamic changes in phase change materials alter phase change characteristics due to systematic changes of bonding and provides an important methodology for the development of PC devices.

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Vapor-deposited inverted perovskite solar cells utilizing self-assembled monolayer (SAM) as hole transport material have gained significant attention for their high efficiencies and compatibility with silicon/perovskite monolithic tandem devices. However, as a small molecule, the SAM layer suffers low thermal tolerance in comparison with other metal oxide or polymers, rendering poor efficiency in solar device with high-temperature (> 160 °C) fabricating procedures. In this study, a dual modification approach involving AlOx and F-doped phenyltrimethylammonium bromide (F-PTABr) layers is introduced to enhance the buried interface. The AlOx dielectric layer improves the interface contact and prevents the upward diffusion of SAM molecules during the vapor-solid reaction at 170 °C, while the F-PTABr layer regulates crystal growth and reduces the interfacial defects. As a result, the AlOx/F-PTABr-treated perovskite film exhibits a homogeneous, pinhole-free morphology with improved crystal quality compared to the control films. This leads to a champion power conversion efficiency of 21.53% for the inverted perovskite solar cells. Moreover, the encapsulated devices maintained 90% of the initial efficiency after 600 h of ageing at 85 °C in air, demonstrating promising potential for silicon/perovskite tandem application.

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This review critically assesses the determination of low molecular weight volatiles by different methods, providing context for the development of suitable techniques to determine volatile content in plant tissue and soil samples as well as the associated analytical challenges. Although sensitive analytical methods have been reported in recent decades, studies on their application in modern investigative techniques are lacking. Herein, the latest sampling methods in volatile biochemistry, current advancements in the understanding of these analytes, and the significance of these findings for other types of volatiles are summarized. Gas chromatography, high-performance liquid chromatography, ion chromatography, thin-film microextraction, and real-time monitoring techniques are discussed and critically determined. This review concerns the methods most suitable for future research in this area.

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Strontium aluminate, with suitable lattice parameters and environmentally friendly water solubility, has been strongly sought for use as a sacrificial layer in the preparation of freestanding perovskite oxide thin films in recent years. However, due to this material's inherent water solubility, the methods used for the preparation of epitaxial films have mainly been limited to high-vacuum techniques, which greatly limits these films' development. In this study, we prepared freestanding single-crystal perovskite oxide thin films on strontium aluminate using a simple, easy-to-develop, and low-cost chemical full-solution deposition technique. We demonstrate that a reasonable choice of solvent molecules can effectively reduce the damage to the strontium aluminate layer, allowing successful epitaxy of perovskite oxide thin films, such as 2-methoxyethanol and acetic acid. Molecular dynamics simulations further demonstrated that this is because of their stronger adsorption capacity on the strontium aluminate surface, which enables them to form an effective protective layer to inhibit the hydration reaction of strontium aluminate. Moreover, the freestanding film can still maintain stable ferroelectricity after release from the substrate, which provides an idea for the development of single-crystal perovskite oxide films and creates an opportunity for their development in the field of flexible electronic devices.

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Historically, knowledge of the molecular packing within the crystal structures of organic semiconductors has been instrumental in understanding their solid-state electronic properties. Nowadays, crystal structures are thus becoming increasingly important for enabling engineering properties, understanding polymorphism in bulk and in thin films, exploring dynamics and elucidating phase-transition mechanisms. This review article introduces the most salient and recent results of the field.

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Environmental-friendless and high-performance thermoelectrics play a significant role in exploring sustainable clean energy. Among them, AgSbTe2 thermoelectrics, benefiting from the disorder in the cation sublattice and interface scattering from secondary phases of Ag2Te and Sb2Te3, exhibit low thermal conductivity and a maximum figure-of-merit ZT of 2.6 at 573 K via optimizing electrical properties and addressing phase transition issues. Therefore, AgSbTe2 shows considerable potential as a promising medium-temperature thermoelectric material. Additionally, with the increasing demands for device integration and portability in the information age, the research on flexible and wearable AgSbTe2 thermoelectrics aligns with contemporary development needs, leading to a growing number of research findings. This work provides a detailed and timely review of AgSbTe2-based thermoelectrics from materials to devices. Principles and performance optimization strategies are highlighted for the thermoelectric performance enhancement in AgSbTe2. The current challenges and future research directions of AgSbTe2-based thermoelectrics are pointed out. This review will guide the development of high-performance AgSbTe2-based thermoelectrics for practical applications.

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To meet the needs of developing efficient extractive materials alongside the evolution of miniaturized sorbent-based sample preparation techniques, a mesoporous structure of g-C3N4 doped with sulfur as a heteroatom was achieved utilizing a bubble template approach while avoiding the severe conditions of other methods. In an effort to increase the number of adsorption sites, the resultant exfoliated structure was then modified with thymol-coumarin NADES as a natural sorbent modifier, followed by introduction into a nylon 6 polymer via an electrospinning process. X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, field-emission scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and Brunauer-Emmett-Teller (BET) surface area analysis validated S-doped g-C3N4 and composite production. The prepared electrospun fiber nanocomposite, entailing satisfactory processability, was then successfully utilized as a sorbent in on-chip thin film micro-solid-phase extraction of non-steroidal anti-inflammatory drugs (NSAIDs) from saliva samples prior to liquid chromatography-tandem mass spectrometry (LC-MS/MS) analysis. Utilizing a chip device, a thin film µ-SPE coupled with LC-MS/MS analysis yielded promising outcomes with reduced sample solution and organic solvents while extending lifetime of a thin film sorbent. The DES-modified S-doped g-C3N4 amount in electrospun was optimized, along with adsorption and desorption variables. Under optimal conditions, selected NSAIDs were found to have a linear range of 0.05-100.0 ng mL-1 with an R2 ≥ 0.997. The detection limits were ranged between 0.02 and 0.2 ng mL-1. The intra-day and inter-day precisions obtained were less than 6.0%. Relative recoveries were between 93.3 and 111.4%.

Asunto(s)

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Polymers have distinctive optical properties and facile fabrication methods that have been well-established. Therefore, they have immense potential for nanophotonic devices. Here, we demonstrate the temperature-sensing potential of SU8-meta-phenylenediamine (SU8-mPD), produced by epoxy amination of the SU-8 polymer. Its properties were examined through a series of molecular structural techniques and optical methods. Thin layers have demonstrated optical emission and absorption in the visible range around 420 and 520 nm, respectively, alongside a strong thermal responsivity, characterized by the 18 ppm °C-1 expansion coefficient. A photonic chip, comprising a thin 5-10 µm SU8-mPD layer, encased between parallel silver and/or gold thin film mirrors, has been fabricated. When pumped by an external light source, this assembly generates a pronounced fluorescent signal that is superimposed with the Fabry-Pérot (FP) resonant response. The chip undergoes mechanical deformation in response to temperature changes, thereby shifting the FP resonance and encoding temperature information into the fluorescence output spectrum. The time response of the device was estimated to be below 1 s for heating and a few seconds for cooling, opening a new avenue for optical sensing using SU8-based polymers. Thermoresponsive resonant structures, encompassing strong tunable fluorescent properties, can further enrich the functionalities of nanophotonic polymer-based platforms. This article is part of the theme issue 'Celebrating the 15th anniversary of the Royal Society Newton International Fellowship'.

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This review paper focuses on group IVB transition metal nitrides (TMNs) such as titanium nitride (TiN), zirconium nitride (ZrN), and hafnium nitride (HfN) and as alternative plasmonic materials to noble metals like gold and silver. It delves into the fabrication methods of these TMNs, particularly emphasizing thin film fabrication techniques like magnetron sputtering and atomic layer deposition, as well as nanostructure fabrication processes applied to these thin films. Overcoming the current fabrication and application-related challenges requires a deep understanding of the material properties, deposition techniques, and application requirements. Here, we discuss the impact of fabrication parameters on the properties of resulting films, highlighting the importance of aligning fabrication methods with practical application requirements for optimal performance. Additionally, we summarize and tabulate the most recent plasmonic applications of these TMNs in fields like biosensing, photovoltaic energy, and photocatalysis, contributing significantly to the current literature by consolidating knowledge on TMNs.