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In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties of silicon. By integrating vapor-liquid-solid-grown nanowires into a micromechanical straining device, we demonstrate uniaxial tensile strain levels up to 9.5%. Thereby the triply degenerated phonon dispersion relation at the Γ-point of silicon disentangle and the longitudinal phonon modes are used to precisely determine the extent of mechanical strain. Simultaneous electrical transport measurements showed a significant enhancement in the electrical conductance. Aside from considerable reduction of the Si bulk resistivity due to strain-induced band gap narrowing, comparison with quasi-particle GW calculations further reveals that the effective Schottky barrier height at the electrical contacts undergoes a substantial reduction. For these reasons, nanowire devices with ultrastrained channels may be promising candidates for future applications of high-performance silicon-based devices.

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Tuning the interfacial Schottky barrier with van der Waals (vdW) contacts is an important solution for two-dimensional (2D) electronics. Here we report that the interlayer dipoles of 2D vdW superlattices (vdWSLs) can be used to engineer vdW contacts to 2D semiconductors. A bipolar WSe2 with Ba6Ta11S28 (BTS) vdW contact was employed to exhibit this strategy. Strong interlayer dipoles can be formed due to charge transfer between the Ba3TaS5 and TaS2 layers. Mechanical exfoliation breaks the superlattice and produces two distinguished surfaces with TaS2 and Ba3TaS5 terminations. The surfaces thus have opposite surface dipoles and consequently different work functions. Therefore, all the devices fall into two categories in accordance with the rectifying direction, which were verified by electrical measurements and scanning photocurrent microscopy. The growing vdWSL family along with the addition surface dipoles enables prospective vdW contact designs and have practical application in nanoelectronics and nano optoelectronics.

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Layered semiconductors of the V-VI group have attracted considerable attention in optoelectronic applications owing to their atomically thin structures. They offer thickness-dependent optical and electronic properties, promising ultrafast response time, and high sensitivity. Compared to the bulk, 2D bismuth selenide (Bi2Se3) is recently considered a highly promising material. In this study, 2D nanosheets are synthesized by prolonged sonication in two different solvents, such as N-methyl-2-pyrrolidone (NMP) and chitosan-acetic acid solution (CS-HAc), using the liquid-phase exfoliation (LPE) method. X-ray diffraction confirms the amorphous nature of exfoliated 2D nanosheets with maximum peak intensity at the same position (015) crystal plane as that obtained in its bulk counterpart. SEM confirms the thin 2D nanosheet-like morphology. Successful exfoliation of Bi2Se3 nanosheets up to five layers is achieved using CS-HAc solvent. The as-synthesized 2D nanosheets in different solvents are employed to fabricate the photodetector. At minimum selected power density, the photodetector fabricated using exfoliated ultrathin 2D nanosheets exhibits the highest range of responsivity, varying from 15 to 2.5 mA/W, and detectivity ranging from 2.83 × 109 to 6.37 × 107. Ultrathin 2D Bi2Se3 nanosheets have fast rise and fall times, ranging from 0.01 to 0.12 and 0.01 to 0.06 s, respectively, at different wavelengths. Ultrathin Bi2Se3 nanosheets have improved photodetection parameters as compared to multilayered nanosheets due to the high surface to volume ratio, reduced recombination and trapping of charge carrier, improved carrier confinement, and faster carrier transport due to the thin layer.

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The development of sensing technologies and miniaturization allows for the development of smart systems with elevated sensing performance. Silicon-based hydrogen sensors have received a lot of attention due to its electrical conductivity and the mechanical endurance. With this motivation, we have proposed a two-terminal silicon-based device in a crossbar architecture as a hydrogen gas sensing platform. In this work, we have adopted a multi-layer modeling approach to analyze the performance of the proposed system. Technology computer-aided design models have been used to capture device performance. A gas sensor model based on hydrogen adsorption on the Palladium surface and a crossbar model has been adopted to understand the Palladium work function variation with gas pressure and the performance of the proposed crossbar system respectively. We have shown the impact of parameters like interconnect resistance and array size on the whole system's performance. Finally, a comprehensive analysis has been provided for the design rule of this architecture. A fabrication process to spur future experimental works has also been added. This work will provide computational insight into the performance of a crossbar hydrogen sensor system, optimized against some critical parameters.

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The ambient ammonia synthesis coupled with distributed green hydrogen production technology can provide promising solutions for low-carbon NH3 production and H2 storage. Herein, we reported Ru-loaded defective pyrochlore K2 Ta2 O6-x with remarkable visible-light absorption and a very low work function, enabling effective visible-light-driven ammonia synthesis from N2 and H2 at low pressure down to 0.2 atm. The photocatalytic rate was 2.8 times higher than that of the best previously reported photocatalyst and the photo-thermal rate at 425 K was similar to that of Ru-loaded black TiO2 at 633 K. Compared to perovskite-type KTaO3-x with the same composition, the pyrochlore exhibited a 3.7-fold increase in intrinsic activity due to a higher photoexcited charge separation efficiency and a higher conduction band position. The interfacial Schottky barrier and spontaneous electron transfer between K2 Ta2 O6-x and Ru further improve photoexcited charge separation and accumulate energetic electrons to facilitate N2 activation.

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Super-high dielectric constant (k) AlOx/TiOy nanolaminates (ATO NLs) are deposited by an atomic layer deposition technique for application in next-generation electronics. Individual multilayers with uniform thicknesses are formed for the ATO NLs. With an increase in AlOx content in each ATO sublayer, the shape of the Raman spectrum has a tendency to approach that of a single AlOx layer. The effects of ATO NL deposition conditions on the electrical properties of the metal/ATO NL/metal capacitors were investigated. A lower deposition temperature, thicker ATO NL, and lower TiOy content in each ATO sublayer can lead to a lower leakage current and smaller loss tangent at 1 kHz for the capacitors. A higher deposition temperature, larger number of ATO interfaces, and higher TiOy content in each ATO sublayer are important for obtaining higher k values for the ATO NLs. With an increase in resistance in the capacitors, the ATO NLs vary from semiconductors to insulators and their k values have a tendency to decrease. For most of the capacitors, the capacitances reduce with increments in absolute measurement voltage. There are semi-circular shapes for the impedance spectra of the capacitors. By fitting them with the equivalent circuit, it is observed that with the increase in absolute voltage, both parallel resistance and capacitance decrease. The variation in the capacitance is explained well by a novel double-Schottky electrode contact model. The formation of super-high k values for the semiconducting ATO NLs is possibly attributed to the accumulation of charges.

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The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the Ilight /Idark ratio is improved to 103 and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.

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A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.

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In the frontier resistive micro-nano gas sensors, the change rate reliability between the measured quantity and output signals has long been puzzled by the ineluctable device-to-device and run-to-run disparities. Here, a neotype sensing data interpretation method to circumvent these signal inconsistencies is reported. The method is based on discovery of a strong linear relation between the initial resistance in air (Ra ) and the absolute change in resistance after exposure to target gas (Ra -Rg ). Metal oxide gas sensors based on a micro-hot-plate are employed as the model system. The study finds that such correlation has a wide universality, even for devices incorporated with different sensing materials or under different gas atmosphere. Furthermore, this rule can also be extensible to graphene-based interdigital microelectrode. In situ probe scanning analyses illuminate that the linear dependence is closely related to work function matching level between metal electrode and sensitive layer. The Schottky barrier at metal-semiconductor junctions is the prominent parameter, whose height (ϕB ) can fundamentally impact material/electrode contact resistance, thereby further affecting the realistic nature expression of sensing materials. Using this correlation, a calibration procedure is proposed and embed in a fully integrated pocket-size sensor prototype, whose response outcomes demonstrated high credibility as compared to commercial apparatus.

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Polarity-controlled growth of ZnO by chemical bath deposition provides a method for controlling the crystal orientation of vertical nanorod arrays. The ability to define the morphology and structure of the nanorods is essential to maximizing the performance of optical and electrical devices such as piezoelectric nanogenerators; however, well-defined Schottky contacts to the polar facets of the structures have yet to be explored. In this work, we demonstrate a process to fabricate metal-semiconductor-metal device structures from vertical arrays with Au contacts on the uppermost polar facets of the nanorods and show that the O-polar nanorods (∼0.44 eV) have a greater effective barrier height than the Zn-polar nanorods (∼0.37 eV). Oxygen plasma treatment is shown by cathodoluminescence spectroscopy to affect midgap defects associated with radiative emissions, which improves the Schottky contacts from weakly rectifying to strongly rectifying. Interestingly, the plasma treatment is shown to have a much greater effect in reducing the number of carriers in O-polar nanorods through quenching of the donor-type substitutional hydrogen on oxygen sites (HO) when compared to the zinc-vacancy-related hydrogen defect complexes (VZn-nH) in Zn-polar nanorods that evolve to lower-coordinated complexes. The effect on HO in the O-polar nanorods coincides with a large reduction in the visible-range defects, producing a lower conductivity and creating the larger effective barrier heights. This combination can allow radiative losses and charge leakage to be controlled, enhancing devices such as dynamic photodetectors, strain sensors, and light-emitting diodes while showing that the O-polar nanorods can outperform Zn-polar nanorods in such applications.

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2D transition metal carbides, known as MXenes, are transparent when the samples are thin enough. They are also excellent electrical conductors with metal-like carrier concentrations. Herein, these characteristics are exploited to replace gold (Au) in GaAs photodetectors. By simply spin-coating transparent Ti3 C2 -based MXene electrodes from aqueous suspensions onto GaAs patterned with a photoresist and lifted off with acetone, photodetectors that outperform more standard Au electrodes are fabricated. Both the Au- and MXene-based devices show rectifying contacts with comparable Schottky barrier heights and internal electric fields. The latter, however, exhibit significantly higher responsivities and quantum efficiencies, with similar dark currents, hence showing better dynamic range and detectivity, and similar sub-nanosecond response speeds compared to the Au-based devices. The simple fabrication process is readily integratable into microelectronic, photonic-integrated circuits and silicon photonics processes, with a wide range of applications from optical sensing to light detection and ranging and telecommunications.

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Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the simultaneous amplification of dark current. A gate-controlled graphene-silicon Schottky junction photodetector that exhibits a high on/off photoswitching ratio (≈104 ), a very high photoresponsivity (≈70 A W-1 ), and a low dark current in the order of µA cm-2 in a wide wavelength range (395-850 nm) is demonstrated. The photoresponsivity is ≈100 times higher than that of existing commercial photodetectors, and 7000 times higher than that of graphene-field-effect transistor-based photodetectors, while the dark current is similar to or lower than that of commercial photodetectors. This result can be explained by a unique gain mechanism originating from the difference in carrier transport characteristics of silicon and graphene.

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Ultrathin molecular layers of Fe(II) -terpyridine oligomers allow the fabrication of large-area crossbar junctions by conventional electrode vapor deposition. The junctions are electrically stable for over 2.5 years and operate over a wide range of temperatures (150-360 K) and voltages (±3 V) due to the high cohesive energy and packing density of the oligomer layer. Electrical measurements reveal ideal Richardson-Shottky emission in surprising agreement with electrochemical, optical, and photoemission data.

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A freestanding conducting polymer plate with one side forming a Schottky contact and the other side an Ohmic contact with two different metal electrodes can generate a DC voltage with an output current density as high as 218.6 µA cm(-2) upon mechanical deformation.

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A large array of Schottky UV photodetectors (PDs) based on vertical aligned ZnO nanowires is achieved. By introducing the piezo-phototronic effect, the performance of the PD array is enhanced up to seven times in photoreponsivity, six times in sensitivity, and 2.8 times in detection limit. The UV PD array may have applications in optoelectronic systems, adaptive optical computing, and communication.