RESUMEN
Group III-V semiconductor multi-junction solar cells are widely used in concentrated-sun and space photovoltaic applications due to their unsurpassed power conversion efficiency and radiation hardness. To further increase the efficiency, new device architectures rely on better bandgap combinations over the mature GaInP/InGaAs/Ge technology, with Ge preferably replaced by a 1.0 eV subcell. Herein, we present a thin-film triple-junction solar cell AlGaAs/GaAs/GaAsBi with 1.0 eV dilute bismide. A compositionally step-graded InGaAs buffer layer is used to integrate high crystalline quality GaAsBi absorber. The solar cells, grown by molecular-beam epitaxy, achieve 19.1% efficiency at AM1.5G spectrum, 2.51 V open-circuit voltage, and 9.86 mA/cm2 short-circuit current density. Device analysis identifies several routes to significantly improve the performance of the GaAsBi subcell and of the overall solar cell. This study is the first to report on multi-junctions incorporating GaAsBi and is an addition to the research on the use of bismuth-containing III-V alloys in photonic device applications.
RESUMEN
Photovoltaic technology is currently at the heart of the energy transition in our pursuit to lean off fossil-fuel-based energy sources. Understanding the workings and trends of the technology is crucial, given the reality. With most conventional PV cells constrained by the Shockley-Queisser limit, new alternatives have been developed to surpass it. One of such variations are heterojunction cells, which, by combining different semiconductor materials, break free from the previous constraint, leveraging the advantages of both compounds. A subset of these cells are multi-junction cells, in their various configurations. These build upon the heterojunction concept, combining several junctions in a cell-a strategy that has placed them as the champions in terms of conversion efficiency. With the aim of modelling a multi-junction cell, several optic and optoelectronic models were developed using a Finite Element Tool. Following this, a study was conducted on the exciting and promising technology that are nanoantenna arrays, with the final goal of integrating both technologies. This research work aims to study the impact of the nanoantennas' inclusion in an absorbing layer. It is concluded that, using nanoantennas, it is possible to concentrate electromagnetic radiation near their interfaces. The field's profiles might be tuned using the nanoantennas' geometrical parameters, which may lead to an increase in the obtained current.
RESUMEN
We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the growth rate, background doping and morphology. It is shown that by adopting an innovative design of the MOVPE growth chamber and proper growth condition, the IV elements growth rate penalization due to As "carry over" can be eliminated and the background doping level in both IV and III-V semiconductors can be drastically reduced. In the temperature range 748-888 K, Ge and SiGe morphologies do not degrade when the semiconductors are grown in a III-V-contaminated MOVPE growth chamber. Critical morphology aspects have been identified for SiGeSn and III-Vs, when the MOVPE deposition takes place, respectively, in a As or Sn-contaminated MOVPE growth chamber. III-Vs morphologies are influenced by substrate type and orientation. The results are promising in view of the monolithic integration of group-IV with III-V compounds in multi-junction solar cells.
RESUMEN
An electroluminescence microscopy combined with a spectroscopy was developed to visually analyze multi-junction solar cells. Triple-junction solar cells with different conversion efficiencies were characterized by using this system. The results showed that the mechanical damages and material defects in solar cells can be clearly distinguished, indicating a high-resolution imaging. The external quantum efficiency (EQE) measurements demonstrated that different types of defects or damages impacted cell performance in various degrees and the electric leakage mostly degraded the EQE. Meanwhile, we analyzed the relationship between electroluminescence intensity and short-circuit current density J SC. The results indicated that the gray value of the electroluminescence image corresponding to the intensity was almost proportional to J SC. This technology provides a potential way to evaluate the current matching status of multi-junction solar cells.
RESUMEN
Multi-junction III-V solar cells are designed to have a much broader absorption of the solar spectrum than Si-based or single junctions, thus yield the highest conversion. The conversion efficiency can be further scaled with sun concentration. The ability of high conversion efficiencies makes multi-junction prime candidates for fine-tuning explorations aimed at getting closer to the theoretical efficiencies. In this paper, we report on electrostatic force microscopy (EFM) measurements of the built-in potential of multi-junction III-V semiconductor-based solar cells. Kelvin probe force microscopy (KPFM) was employed to qualitatively study the width and electrical properties of individual junctions, i.e., built-in potential, activity, and thickness of the p-n junctions. In addition, the voltage drops across individual solar cell p-n junctions were measured using Kelvin probe microscopy under various operation conditions: dark; illuminated; short-circuit; and biased. We present a method which enables the measurement of a working structure, while focusing on the electrical characteristics of an individual junction by virtue of selecting the spectral range of the illumination used. We show that these pragmatic studies can provide a feedback to improve photovoltaic device design, particularly of operation under a current mismatched situation. This new analysis technique offers additional insights into behavior of the multi-junction solar cell and shows promise for further progress in this field.