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With the growth of additive manufacturing (AM), there has been increasing demand for fabricating conformal electronics that directly integrate with larger components to enable unique functionality. However, fabrication of conformal electronics is challenging because devices must merge with host substrates regardless of curvilinearity, topography, or substrate material. In this work, we employ aerosol jet (AJ) printing, an AM method for jet printing electronics using ink-based materials, and a custom-made lathe mechanism for mounting flexible substrates and 3D objects on a rotating axis. Using this method of lathe-based AJ printing, conformal electronics are printed around the circumference of rotational bodies with 3D curvilinear surfaces through cylindrical-coordinate motion. We characterize the diverse capabilities of lathe AJ (LAJ) printing and demonstrate flexible conformal electronics including multilayer carbon nanotube transistors. Lastly, a graphene sensor is conformally printed on an inflated catheter balloon for temperature and inflation monitoring, thus highlighting the versatilities of LAJ printing.

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First-principle calculations based on density functional theory are employed to investigate the impact of graphene insertion on the electronic properties and Schottky barrier of MoS2/metals (Mg, Al, In, Cu, Ag, Au, Pd, Ti, and Sc) without deteriorating the intrinsic properties of the MoS2 layer. The results reveal that the charge transfer mainly occurs at the interface between the graphene and metal layers, with smaller transfer at the interface between bi-layer garphene or between graphene and MoS2. And the tunneling barrier exists at the interface between graphene and MoS2, which hinders electron injection from graphene to MoS2. Importantly, the Schottky barrier height ( Φ SB,N ) decreases upon graphene insertion into MoS2/metal contacts. Specifically, for single-layer graphene, the Φ SB,N of MoS2 contacted with Mg, In, Sc, and Ti are - 0.116 eV, - 0.116 eV, - 0.014 eV, and - 0.116 eV, respectively. Furthermore, with bilayer graphene, when by inserting bi-layer graphene, the negative n-type Schottky barrier of - 0.086 eV, - 0.114 eV, - 0.059 eV, - 0.008 eV, and - 0.0636 eV are observed for MoS2 contacted with the respective metals, respectively. These findings provide a practical guidance for developing and designing high-performance transition metal dichalcogenide nanoelectronic devices.

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CONTEXT: Revealing the mechanism of intermolecular interactions in dinitroamine ammonium (ADN)-based liquid propellants and exploring the reasons for their performance changes, multi-perspective interaction analyses of ADN and ADN-water (H2O)-methanol (CH3OH) solutions have been conducted via theoretical methods. The band structure, density of states (DOS), surface electrostatic potential (ESP), Hirshfeld surface, reduced density gradient (RDG), AIM topological analysis, and detonation performance were studied and the results showed that both the ADN and ADN-H2O-CH3OH solutions had hydrogen bonds and van der Waals interactions. By introducing the small molecules H2O and CH3OH, the detonation performance of the ADN-H2O-CH3OH solution slightly decreased, but its sensitivity also decreased. Overall, the comprehensive performance of the ADN-H2O-CH3OH solution has improved, and the application range has expanded. These results are helpful for obtaining a deeper understanding of ADN-based liquid propellants at the atomic level and contribute to the development of new liquid propellants. METHODS: The ADN and ADN-H2O-CH3OH solutions were constructed by Amorphous cell module and optimized via GGA with PBE methods in the Dmol3 module of the Materials Studio, and their electronic properties were calculated. Hirshfeld surfaces were generated with CrystalExplorer 3.0. A topological analysis of a variety of molecular clusters was performed via QTAIM. The QTAIM and RDG analyses in this work were generated by Multiwfn 3.0.

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Historically, knowledge of the molecular packing within the crystal structures of organic semiconductors has been instrumental in understanding their solid-state electronic properties. Nowadays, crystal structures are thus becoming increasingly important for enabling engineering properties, understanding polymorphism in bulk and in thin films, exploring dynamics and elucidating phase-transition mechanisms. This review article introduces the most salient and recent results of the field.

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The interface connects the reinforced phase and the matrix of materials, with its microstructure and interfacial configurations directly impacting the overall performance of composites. In this study, utilizing seven atomic layers of Mg(0001) and Ti(0001) surface slab models, four different Mg(0001)/Ti(0001) interfaces with varying atomic stacking configurations were constructed. The calculated interface adhesion energy and electronic bonding information of the Mg(0001)/Ti(0001) interface reveal that the HCP2 interface configuration exhibits the best stability. Moreover, Si, Ca, Sc, V, Cr, Mn, Fe, Cu, Zn, Y, Zr, Nb, Mo, Sn, La, Ce, Nd, and Gd elements are introduced into the Mg/Ti interface layer or interfacial sublayer of the HCP2 configurations, and their interfacial segregation behavior is investigated systematically. The results indicate that Gd atom doping in the Mg(0001)/Ti(0001) interface exhibits the smallest heat of segregation, with a value of -5.83 eV. However, Ca and La atom doping in the Mg(0001)/Ti(0001) interface show larger heat of segregation, with values of 0.84 and 0.63 eV, respectively. This implies that the Gd atom exhibits a higher propensity to segregate at the interface, whereas the Ca and La atoms are less inclined to segregate. Moreover, the electronic density is thoroughly analyzed to elucidate the interfacial segregation behavior. The research findings presented in this paper offer valuable guidance and insights for designing the composition of magnesium-based composites.

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Recently, oriented external electric fields (OEEFs) have earned much attention due to the possibility of tuning the properties of electronic systems. From a theoretical perspective, one can resort to electronic structure calculations to understand how the direction and strength of OEEFs affect the properties of electronic systems. However, for multi-reference (MR) systems, calculations employing the popular Kohn-Sham density functional theory with the traditional semilocal and hybrid exchange-correlation energy functionals can yield erroneous results. Owing to its decent compromise between accuracy and efficiency for MR systems at the nanoscale (i.e., MR nanosystems), in this study, thermally assisted occupation density functional theory (TAO-DFT) is adopted to explore the electronic properties of n-acenes (n = 2-10), containing n linearly fused benzene rings, in OEEFs, where the OEEFs of various electric field strengths are applied along the long axes of n-acenes. According to our TAO-DFT calculations, the ground states of n-acenes in OEEFs are singlets for all the cases examined. The effect of OEEFs is shown to be significant on the vertical ionization potentials and vertical electron affinities of ground-state n-acenes with odd-number fused benzene rings. Moreover, the MR character of ground-state n-acenes in OEEFs increases with the increase in the acene length and/or the electric field strength.

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Two-dimensional semiconducting materials such as MoS2have gained significant attention for potential applications in electronic components due to their reduced dimensionality and exceptional electrical and optoelectronic properties. However, when reporting the performance of such 2D-based devices, one needs to consider the effect of the environment in which the characterization is carried out. Air exposure has a non-negligible impact on the electronic performance and vacuum thermal annealing is an established method to decrease the effects of adsorbates. Nevertheless, when measurements are performed in ambient conditions these effects arise again. In this work, we study the changes in the electrical and optoelectronic properties of single-layer MoS2-based devices at air exposure after thermal annealing treatment. Measurements are carried out in anin-situvacuum thermal annealing system, enabling the recording of electrical performance degradation over time. Moreover, this work shows how hexagonal boron nitride (hBN) capping improves device performance, both in vacuum and after venting, as well as stability, by decreasing the degradation speed by around six times. The results suggest that vacuum thermal annealing and hBN capping are methods to mitigate the effects of air environment on these devices.

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A two-dimensional crystalline allotrope of boron, Borophene, has attracted much interest lately because of its unique electrical characteristics and possible uses in electronic devices. This thorough analysis examines the opportunities and difficulties related to the bandgap creation in boron, which is essential for its incorporation into semiconductor technologies. An introduction to the structural features of Borophene is given at the outset of the text, emphasizing its fascinating hexagonal lattice and tunable electronic properties. The review thoroughly explores the range of techniques used in synthesizing Borophene, covering both theoretical and experimental methods. It assesses how growth conditions, post-synthesis treatments, and substrate interactions affect the establishment of the bandgap in Borophene. The study also looks at how strain engineering, flaws, and impurities affect the bandgap, highlighting the necessity of exact control over these elements to get desirable electrical properties. We go into great length about the difficulties in Borophene bandgap engineering, including stability, scalability, and repeatability problems. The study critically evaluates the current body of knowledge, pointing out knowledge gaps and suggesting possible directions for further research. In addition, the paper discusses how external elements like humidity and temperature affect the stability of Borophene electrical characteristics, which complicates practical application. To sum up, this thorough analysis offers insightful information about the development of the borophene bandgap formation and a road map for scientists and engineers hoping to utilize borophene to its maximum potential in the future generation of electronic devices. The difficulties in synthesis and the complex interaction of several factors influencing bandgap creation highlight the necessity of ongoing multidisciplinary work to realize the technological potential of borophene.

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Computing the ground state of interacting quantum matter is a long-standing challenge, especially for complex two-dimensional systems. Recent developments have highlighted the potential of neural quantum states to solve the quantum many-body problem by encoding the many-body wavefunction into artificial neural networks. However, this method has faced the critical limitation that existing optimization algorithms are not suitable for training modern large-scale deep network architectures. Here, we introduce a minimum-step stochastic-reconfiguration optimization algorithm, which allows us to train deep neural quantum states with up to 106 parameters. We demonstrate our method for paradigmatic frustrated spin-1/2 models on square and triangular lattices, for which our trained deep networks approach machine precision and yield improved variational energies compared to existing results. Equipped with our optimization algorithm, we find numerical evidence for gapless quantum-spin-liquid phases in the considered models, an open question to date. We present a method that captures the emergent complexity in quantum many-body problems through the expressive power of large-scale artificial neural networks.

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TiO2 is the most widely used material in photoelectrocatalytic systems. A key parameter to understand its efficacy in such systems is the band bending in the semiconductor layer. In this regard, knowledge on the band energetics at the semiconductor/current collector interface, especially for a nanosemiconductor electrode, is extremely vital as it will directly impact any charge transfer processes at its interface with the electrolyte. Since direct investigation of interfacial electronic features without compromising its structure is difficult, only seldom are attempts made to study the semiconductor/current collector interface specifically. This work utilizes ultraviolet photoelectron spectroscopy (UPS) to determine the valence band maximum (EVBM) and Fermi level (EF) at different depths in a nano-TiO2/TiN thin-film system reached using an Ar gas-clustered ion beam (GCIB). By combining UPS with GCIB depth profiling, we report an innovative approach for truly mapping the energy band structure across a nanosemiconductor/current collector interface. By coupling it with X-ray photoelectron spectroscopy (XPS), correlations among chemistry, chemical bonding, and electronic properties for the nano-TiO2/TiN interface could also be studied. The effects of TiO2 in situ electrochemical reduction in aqueous electrolytes are also investigated where UPS confirmed a decrease in the semiconductor work function (WF) and an associated increase in n-type Ti3+ centers of nano-TiO2 electrodes post use in a 0.2 M potassium chloride solution. We report the use of UPS to precisely determine the energy band diagrams for a nano-TiO2/TiN thin-film interface and confirm the increase in TiO2 n-type dopant concentrations during electrocatalysis, promoting a much more comprehensive and intuitive understanding of the TiO2 activation mechanism by proton intercalation and therefore further optimizing the design process of efficient photocatalytic materials for solar conversion.

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The performance and efficacy of dyes, which are crucial photon-harvesting components in dye-sensitized solar cells (DSSCs), must be meticulously analysed at the molecular level. This research focuses on a theoretical investigation of dye characteristics rather than the synthesis of novel compounds. Using Density Functional Theory (DFT) and Time-Dependent DFT (TD-DFT), we have analysed six D-π-A structure dyes designed with pyrene as the π-bridge and various functional groups as donors. Our study examines their geometrical, electronic, optical, electronic localization, and electrochemical properties. The findings reveal that these theoretically designed D-π-A dyes show significant improvements in light-harvesting efficiency, open-circuit photovoltage, electron injection efficiency, and overall photovoltaic performance. The analysis indicates effective electron injection from each dye into the conduction band of TiO2, followed by efficient regeneration and enhanced intra- and intermolecular charge transfer properties. The incorporation of pyrene as a π-bridge and the use of different functional groups as donors are crucial for facilitating electron transfer from the donor to the acceptor region. Among the dyes studied, the D-π-D modified dye demonstrates superior theoretical performance, attributed to its higher energy levels of the lowest unoccupied molecular orbital and greater oscillator strengths for excited states. This results in improved intramolecular electron transfer and electron injection into the conduction band of TiO2, followed by effective regeneration. Overall, our study highlights the potential of these theoretically modeled dyes as highly promising sensitizers for DSSCs, due to their exceptional optical and electronic properties and impressive photovoltaic parameters. These findings position these molecular structures as strong candidates for future applications in organic DSSCs.

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The development of a wearable, easy-to-fabricate, and stable intelligent minisystem is highly desired for the closed-loop management of diabetes. Conventional systems always suffer from large size, high cost, low stability, or complex fabrication. Here, we show for the first time a wearable, rapidly manufacturable, stability-enhancing microneedle patch for diabetes management. The patch consists of a graphene composite ink-printed sensor on hollow microneedles, a polyethylene glycol (PEG)-functionalized electroosmotic micropump integrated with the microneedles, and a printed circuit board for precise and intelligent control of the sensor and pump to detect interstitial glucose and deliver insulin through the hollow channels. Via synthesizing and printing the graphene composite ink, the sensor fabrication process is fast and the sensing electrodes are stable. The PEG functionalization enables the micropump a significantly higher stability in delivering insulin, extending its lifetime from days to weeks. The patch successfully demonstrated excellent blood glucose control in diabetic rats. This work may introduce a new paradigm for building new closed-loop systems and shows great promise for widespread use in patients with diabetes.

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This work demonstrates a thorough investigation into the synthesis and characterization of bismuth ferric oxide (BFO) photocatalyst for microwave-induced photodegradation of organic pollutants in greywater. Microwave (MW) irradiation was executed to enhance the generation of reactive oxygen species, contributing to the catalytic effectiveness of the synthesized photocatalyst. Through an efficient ultrasound-assisted synthesis process, perovskite BFO nanoparticles with a rhombohedral crystal structure and a crystallite size of around 15 nm were successfully manufactured. Comprehensive characterization employing various analytical techniques including X-ray diffraction (XRD), Energy Dispersive X-ray Analysis (EDAX), Fourier Transform Infrared and Raman Spectroscopy, UV-Visible Diffuse Reflectance Spectroscopy (UVDRS), photoluminescence spectroscopy, Scanning Electron Microscopy (SEM), and Brunauer-Emmett-Teller (BET) studies provided insights into the structural, elemental, spectral, optical, morphological, and surface area properties of the nanoparticles. The UV-vis spectroscopy and Tauc's plot were employed to elucidate the band structure of the photocatalyst, providing insights into its essential electronic properties for catalytic applications. With a narrow optical band gap of 2.13 eV, the synthesized photocatalyst demonstrated suitability for optical applications and exhibited substantial catalytic activity in the microwave-induced photocatalytic degradation of greywater. Remarkably, it achieved a 93.5% reduction in total organic carbon (TOC) within 180 min under moderate 50-W illumination. Refining process parameters through optimization studies notably augmented degradation efficiency. Scavenging investigations validated the efficient mineralization of total organic carbon content. Kinetic assessments provided mechanistic insights into improved catalytic activity of BFO, which was attributed to a changed band structure that allows for fast charge transfer across interfacial layers. Moreover, the stability and reusability of the BFO photocatalyst were assessed over five cycles, highlighting its potential practical application as an efficient and reusable photocatalyst for greywater treatment. These findings underscore the promising prospects of BFO in addressing environmental challenges and advancing sustainable wastewater treatment technologies.

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In the modern era, the major problem is solving energy production and consumption. For this purpose, perovskite materials meet these issues and fulfill energy production at a low cost. Density functional theory and the Cambridge Serial Total Energy Package (CASTEP) are used to examine the characteristics of the cubic inorganic perovskites RPbBr3 (R = Cs, Hg, and Ga). In the context of the generalized gradient approximation (GGA), the ultrasoft pseudo-potential plane wave technique and the Perdew-Burke-Ernzerhof exchange-correlation functional are used for investigations. Structural, mechanical, electronics, and optical properties are investigated using CASTEP code. According to structural properties, compounds have a cubic nature with space 221 (Pm3m). Compounds formation energy (- 3.46, - 2.21, and - 3.14 eV)of (CsPbBr3, HgPbBr3, and GaPbBr3) and phonon calculations are studied and find that compounds are stable. The results of our investigation show that the compounds have narrow bandgaps of direct kind, with 1.85 eV for CsPbBr3, 1.56 eV for HgPbBr3, and 1.71 eV for GaPbBr3, respectively, indicating that they may be used to improve conductivity. Additionally, anisotropy (2.135, 3.651, 10.602), Pugh's ratio (1.87, 2.25, 2.14), and Poison's ratio (0.27, 0.31, 0.29) are traits that the compounds (CsPbBr3, HgPbBr3, GaPbBr3) display a ductile nature. The CsPbBr3 compound showed significant optical conductivity and absorption in terms of their optical properties, especially in the visible region, which makes them suitable for use in solar cell applications as well as for LED applications.

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The multi-tier G W+EDMFT scheme is an ab-initio method for calculating the electronic structure of correlated materials. While the approach is free from ad-hoc parameters, it requires a selection of appropriate energy windows for describing low-energy and strongly correlated physics. In this study, we test the consistency of the multi-tier description by considering different low-energy windows for a series of cubic SrXO3 (X = V, Cr, Mn) perovskites. Specifically, we compare the 3-orbital t 2g model, the 5-orbital t 2g + e g model, the 12-orbital t 2g + O p model, and (in the case of SrVO3) the 14-orbital t 2g + e g + O p model and compare the results to available photoemission and X-ray absorption measurements. The multi-tier method yields consistent results for the t 2g and t 2g + e g low-energy windows, while the models with O p states produce stronger correlation effects and mostly agree well with experiment, especially in the unoccupied part of the spectrum. We also discuss the consistency between the fermionic and bosonic spectral functions and the physical origin of satellite features, and present momentum-resolved charge susceptibilities.

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Hole spins in Ge/SiGe heterostructures have emerged as an interesting qubit platform with favourable properties such as fast electrical control and noise-resilient operation at sweet spots. However, commonly observed gate-induced electrostatic disorder, drifts, and hysteresis hinder reproducible tune-up of SiGe-based quantum dot arrays. Here, we study Hall bar and quantum dot devices fabricated on Ge/SiGe heterostructures and present a consistent model for the origin of gate hysteresis and its impact on transport metrics and charge noise. As we push the accumulation voltages more negative, we observe non-monotonous changes in the low-density transport metrics, attributed to the induced gradual filling of a spatially varying density of charge traps at the SiGe-oxide interface. With each gate voltage push, we find local activation of a transient low-frequency charge noise component that completely vanishes again after 30 hours. Our results highlight the resilience of the SiGe material platform to interface-trap-induced disorder and noise and pave the way for reproducible tuning of larger multi-dot systems.

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We investigate the energy spectra and optical absorption of a 3D quantum dot-double quantum ring structure of GaAs/Al0.3Ga0.7As with adjustable geometrical parameters. In the effective mass approximation, we perform 3D numerical computations using as height profile a superposition of three Gaussian functions. Independent variations of height and width of the dot and of the rings and also of the dot-rings distance determine particular responses, useful in practical applications. We consider that a suitable manipulation of the geometrical parameters of this type of quantum coupling offer a variety of responses and, more important, the possibility of a fine adjusting in energy spectra and in the opportunity of choosing definite absorption domains, properties required for the improvement of the performances of optoelectronic devices.

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The remarkable electronic properties of monolayer MoTe2 make it a very adaptable material for use in optoelectronic and nano-electronic applications. MoTe2 growth often exhibits intrinsic defects, which significantly influence the material's characteristics. In this work, we conducted a thorough investigation of the electronic characteristics of intrinsic defects, including point defects, in monolayer MoTe2 using first-principles calculations based on density functional theory (DFT). Our findings indicate that the presence of point defects leads to the formation of n-type properties as the Fermi level situates above the conduction band. Our first-principles density functional theory calculation revealed an appearance of donor level in the band gap close to the conduction band in MoTe2. Our study signifies that the formation energy of a vacancy in a Te atom is lower than that of both a vacancy in a Mo atom and two vacancies in Te atom. This suggests that during the synthesis process, it is more probable for Te atom vacancies to be created. A defect in the pristine monolayer of MoTe2 leads to a slight decrease in the band gap, causing a transition from a direct band gap semiconductor to an indirect band gap semiconductor. The results of our study indicate that the presence of vacancy defects may modify the electronic properties of monolayer MoTe2, suggesting its potential as a new platform for electronic applications. Hence, our analysis offers significant theoretical backing for defect engineering in MoTe2 monolayers and other 2D materials, a critical aspect in the advancement of nanoscale devices with the desired functionality.

The study explores the electronic properties of monolayer MoTe2, revealing intrinsic defects that can enhance its potential for electronic applications and providing theoretical support for defect engineering in 2D materials.

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CONTEXT AND RESULTS: The structure, electronic and optical properties of single-layer transition metallic chalcogenides ZrX3 (X = S, Se, Te) have been studied by density functional theory. The electron energy dispersion curve shows that ZrX3 has semiconductor properties, in which the conduction band is mainly contributed by the correlated states of the Zr-d orbital, and the valence band is mainly contributed by the correlated states of the X-p orbital. It is found that b-axis and biaxial strain have great influence on the bandgap and the shift of density of states is also large. At the same time, the peak value of density of states increases greatly when biaxial strain is applied. It is of guiding significance for selecting suitable substrates to prepare two-dimensional ZrX3 materials to study their electronic properties. The calculation of optical constants confirms that ZrX3 has strong optical anisotropy. In the visible range, the light absorption efficiency of ZrX3 in the direction of electric field polarization [100] is higher than that in the direction of [010]. The reflectance spectral results show that ZrS3 and ZrSe3 in the [100] directions have the highest reflectance, and ZrTe3 in the [010] direction has the highest reflectance, even in the long electromagnetic radiation range (up to 10 eV), which is of great significance for the construction of visible optical devices. COMPUTATIONAL METHOD: All computations have been carried out based on density functional theory (DFT) as implemented in the CASTEP code. The pseudo-potential is adopted by the norm conserving, and the exchange correlation functional is adopted by the Perdew-Burke-Ernzerhof in local generalized gradient approximation (GGA).

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CONTEXT: Energy-containing materials such as explosives have attracted considerable interest recently. In the field of high-energy materials, tetrazine and its derivatives can largely meet the requirements of high nitrogen content and oxygen balance. Nitrogen-rich energetic salts are important research subjects. Nitrogen-rich salt of 3,6-dinitramino-1,2,4,5-tetrazine is a high-energy nitrogen-rich material, but there are few related studies. This paper systematically studies the crystal structure and electronic, vibrational, and thermodynamic properties of (NH4)2(DNAT). The lattice parameters of (NH4)2(DNAT) are observed to align well with the experimental values. The properties of electrons are analyzed by band structure and density of states (DOS). The phonon dispersion curves indicate that the compound is dynamically stable. The vibrational modes of bonds and chemical groups are described in detail, and the peaks in the Raman and infrared spectra are assigned to different vibration modes. Based on the vibration characteristics, thermodynamic properties such as enthalpy (H), Helmholtz free energy (F), entropy (S), Gibbs free energy (G), constant volume heat capacity (CV), and Debye temperature (Θ) are analyzed. This article can pave the way for subsequent work or provide data support to other researchers, promoting further research. METHODS: In this study, we utilized the density functional theory (DFT) for our calculations. The exchange-correlation potential and van der Waals interactions were characterized based on the GGA-PBE + G function calculation. We obtained Brillouin zone integrals using Monkhorst-Pack k-point grids, with the k-point of the Brillouin zone set to a 2 × 2 × 2 grid. During the self-consistent field operation, we set the total energy convergence tolerance to 5 × 10-6 eV per atom. The cut-off energy for the calculation was established at 830 eV. Additionally, the states of H (1s1), C (2s2 2p2), N (2s2 2p3), and O (2s2 2p4) were treated as valence electrons in our study.