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Embedding quantum dots into porous matrices is a very beneficial approach for generating hybrid nanostructures with unique properties. In this contribution we explore strategies to dope nanoporous SiO2 thin films made by atomic layer deposition and selective wet chemical etching with precise control over pore size with CdSe quantum dots. Two distinct strategies were employed for quantum dot deposition: in situ growth of CdSe nanocrystals within the porous matrix via successive ionic layer adsorption reaction, and infiltration of pre-synthesized quantum dots. To address the impact of pore size, layers with 10 nm and 30 nm maximum pore diameter were used as the matrix. Our results show that though small pores are potentially accessible for the in situ approach, this strategy lacks controllability over the nanocrystal quality and size distribution. To dope layers with high-quality quantum dots with well-defined size distribution and optical properties, infiltration of preformed quantum dots is much more promising. It was observed that due to higher pore volume, 30 nm porous silica shows higher loading after treatment than the 10 nm porous silica matrix. This can be related to a better accessibility of the pores with higher pore size. The amount of infiltrated quantum dots can be influenced via drop-casting of additional solvents on a pre-drop-casted porous matrix as well as via varying the soaking time of a porous matrix in a quantum dot solution. Luminescent quantum dots deposited via this strategy keep their luminescent properties, and the resulting thin films with immobilized quantum dots are suited for integration into optoelectronic devices.
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Polymer fibers are considered ideal transmission media for all-optical networks, but their high intrinsic loss significantly limits their practical use. Quantum dot-doped polymer fiber amplifiers are emerging as a promising solution to this issue and are becoming a significant focus of research in both academia and industry. Based on the properties of CdSe/ZnS quantum dots and PMMA material, this study experimentally explores three fabrication methods for CdSe/ZnS quantum dots-doped PMMA fibers: hollow fiber filling, melt-drawing, and melt extrusion. The advantages and disadvantages of each method and key issues in fiber fabrication are analyzed. Utilizing the CdSe/ZnS quantum dots-doped PMMA fibers that were fabricated, we theoretically analyzed the key factors affecting gain performance, including fiber length, quantum dots doping concentration, and signal light intensity. Under the conditions of 1.5 W power and 445 nm laser pumping, a maximum on-off gain of 16.2 dB was experimentally achieved at 635 nm. Additionally, using a white light LED as the signal source, a broadband on-off gain with a bandwidth exceeding 70 nm and a maximum gain of 12.4 dB was observed in the 580-650 nm range. This research will contribute to the development of quantum dots-doped fiber devices and broadband optical communication technology, providing more efficient solutions for future optical communication networks.
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Small metal-rich semiconducting quantum dots (QDs) are promising for solid-state lighting and single-photon emission due to their highly tunable yet narrow emission line widths. Nonetheless, the anionic ligands commonly employed to passivate these QDs exert a substantial influence on the optoelectronic characteristics, primarily owing to strong electron-phonon interactions. In this work, we combine time-domain density functional theory and nonadiabatic molecular dynamics to investigate the excited charge carrier dynamics of Cd28Se17X22 QDs (X = HCOO-, OH-, Cl-, and SH-) at ambient conditions. These chemically distinct but regularly used molecular groups influence the dynamic surface-ligand interfacial interactions in Cd-rich QDs, drastically modifying their vibrational characteristics. The strong electron-phonon coupling leads to substantial transient variations at the band edge states. The strength of these interactions closely depends on the physicochemical characteristics of passivating ligands. Consequently, the ligands largely control the nonradiative recombination rates and emission characteristics in these QDs. Our simulations indicate that Cd28Se17(OH)22 has the fastest nonradiative recombination rate due to the strongest electron-phonon interactions. Conversely, QDs passivated with thiolate or chloride exhibit considerably longer carrier lifetimes and suppressed nonradiative processes. The ligand-controlled electron-phonon interactions further give rise to the broadest and narrowest intrinsic optical line widths for OH and Cl-passivated single QDs, respectively. Obtained computational insights lay the groundwork for designing appropriate passivating ligands on metal-rich QDs, making them suitable for a wide range of applications, from blue LEDs to quantum emitters.
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Self-powered photodetectors with bipolar photoresponse characteristics are expected to play a critical role in the field of secure optical communication, artificial neuromorphic systems, and intelligent color sensors. In this work, asymmetric heterojunction devices exhibiting wavelength-dependent bipolar photoresponse with a structure of Glass/FTO/CdSe/Bi2Se3/Au were fabricated. Under a short wavelength light irradiation, the top CdSe absorber generates a high carrier concentration; the excited carriers are quickly separated by the built-in electric field induced by the FTO/CdSe diode, resulting in a negative photocurrent. For light with wavelengths beyond the CdSe absorption edge, it is absorbed by the bottom Bi2Se3 absorber, and a positive photocurrent can be observed. Therefore, based on the bandgap difference between the top CdSe absorber and the bottom Bi2Se3 absorber, combined with the photogenerated carriers separated by asymmetric back-to-back diode, a wavelength-dependent bipolar response is realized. In this work, by employing this structure, the responsivities of -33.3 and 0.3 mA/W were achieved under the illumination of 405 and 830 nm, respectively. This work provides important indications in the preparation and performance optimization for wavelength-dependent bipolar photodetectors.
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At cryogenic temperatures, the photoluminescence spectrum of CdSe nanoplatelets (NPLs) usually consists of multiple emission lines, the origin of which is still under debate. While there seems to be consensus that both neutral excitons and trions contribute to the NPL emission, the prominent role of trions is rather puzzling. In this work, we demonstrate that Förster resonant energy transfer in stacks of NPLs combined with hole trap states in specific NPLs within the stack trigger trion formation, while single NPL spectra are dominated by neutral excitonic emission. This interpretation is verified by implementing copper (Cu+) dopants into the lattice as intentional hole traps. Trion emission gets strongly enhanced, and due to the large amount of hole trapping Cu+ states in each single NPL, trion formation does not necessarily require stacking of NPLs. Thus, the ratio between trion and neutral exciton emission can be controlled by either changing the amount of stacked NPLs during sample preparation or implementing copper dopants into the lattice which act as additional hole traps.
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This research investigates the structural, morphological, and optical properties of Cadmium Selenide (CdSe) thin films deposited via the Chemical Bath Deposition (CBD) Technique, focusing on the impact of Iron (Fe) doping. Using Cadmium Chloride (CdCl2) and Ferrous chloride (FeCl2) as precursor materials, the research investigates how Fe doping affects the structural and photoelectric characteristics of the films. Employing various characterization methods including X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Fourier-Transform Infrared Spectroscopy (FTIR), and UV-Vis NIR spectroscopy, the study provides a comprehensive analysis of the films. XRD analysis confirms the formation of a cubic structure with a predominant orientation along the (111) plane, consistent with XRD peaks. Additionally, XRD data reveals the degradation of thin films post-annealing. Crystalline size and strain are determined using the Debye-Scherrer and Wilson formulae, while lattice constant and Size-strain plots are derived from X-ray line broadening. The average crystallite size ranges from 12 to 21 nm. Optical band gaps are found to be 2.25 eV, 2.91 eV, 2.87 eV, and 2.85 eV for the samples. Interestingly, a decrease in crystal size with increasing doping concentration correlates with a reduction in bandgap. This investigation offers valuable insights into the fabrication and characterization of CdSe thin films, particularly highlighting the impact of Fe doping on their structural and optical properties. Overall, this study provides valuable insights into the fabrication and characterization of CdSe thin films, emphasizing the importance of precise doping control for tailoring material properties and advancing their applications in photovoltaic and optoelectronic devices.
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Fluorescent nanoparticles known as quantum dots (QDs) have unique properties that make them useful in biomedicine. Specifically, CdSe/ZnS QDs, while good at fluorescing, show toxicity. Due to this, safer alternatives have been developed. This study uses a tetrazolium dye (XTT) viability assay, reactive oxygen species (ROS) fluorescent imaging, and apoptosis to investigate the effect of QD alternatives InP/ZnS, CuInS2/ZnS, and nitrogen-doped carbon dots (NCDs) in liver cells. The liver is a possible destination for the accumulation of QDs, making it an appropriate model for testing. A cancerous liver cell line known as HepG2 and an immortalized liver cell line known as THLE-2 were used. At a nanomolar range of 10-150, HepG2 cells demonstrated no reduced cell viability after 24 h. The XTT viability assay demonstrated that CdSe/ZnS and CuInS2/ZnS show reduced cell viability in THLE-2 cells with concentrations between 50 and 150 nM. Furthermore, CdSe/ZnS- and CuInS2/ZnS-treated THLE-2 cells generated ROS as early as 6 h after treatment and elevated apoptosis after 24 h. To further corroborate our results, apoptosis assays revealed an increased percentage of cells in the early stages of apoptosis for CdSe/ZnS-treated (52%) and CuInS2/ZnS-treated (38%) THLE-2. RNA transcriptomics revealed heavy downregulation of cell adhesion pathways such as wnt, cadherin, and integrin in all QDs except NCDs. In conclusion, NCDs show the least toxicity toward these two liver cell lines. While demonstrating less toxicity than CdSe/ZnS, the metallic QDs (InP/ZnS and CuInS2/ZnS) still demonstrate potential concerns in liver cells. This study serves to explore the toxicity of QD alternatives and better understand their cellular interactions.
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Exciton-polaritons provide a versatile platform for investigating quantum electrodynamics effects in chemical systems, such as polariton-altered chemical reactivity. However, using polaritons in chemical contexts will require a better understanding of their photophysical properties under ambient conditions, where chemistry is typically performed. Here, we used cavity quality factor to control strong light-matter interactions and in particular the excited state dynamics of colloidal CdSe nanoplatelets (NPLs) coupled to a Fabry-Pérot optical cavity. With increasing cavity quality factor, we observe significant population of the upper polariton (UP) state, exemplified by the rare observation of substantial UP photoluminescence (PL). Excitation of the lower polariton (LP) states results in upconverted PL emission from the UP branch due to efficient exchange of population between the LP, UP and the reservoir of dark states present in collectively coupled polaritonic systems. In addition, we measure time scales for polariton dynamics â¼100 ps, implying great potential for NPL based polariton systems to affect photochemical reaction rates. State-of-the-art quantum dynamical simulations show outstanding quantitative agreement with experiments, and thus provide important insight into polariton photophysical dynamics of collectively coupled nanocrystal-based systems. These findings represent a significant step toward the development of practical polariton photochemistry platforms.
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The recent surge of interest in polaritons has prompted fundamental questions about the role of dark states in strong light-matter coupling phenomena. Here, we systematically vary the relative number of dark states by controlling the number of stacked CdSe nanoplatelets confined in a Fabry-Pérot cavity. We find the emission spectrum to change significantly with an increasing number of nanoplatelets, with a gradual shift of the dominant emission intensity from the lower polariton branch to a manifold of dark states. Through accompanying calculations based on a kinetic model, this shift is rationalized by an entropic trapping of excitations by the dark state manifold, while a weak dark state dispersion due to local disorder explains their nonzero emission. Our results point toward the relevance of the dark state concentration to the optical and dynamical properties of cavity-embedded quantum emitters with ramifications for Bose-Einstein condensate formation, polariton lasing, polariton-based quantum transduction schemes, and polariton chemistry.
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Oleic acid-capped CdSe/ZnS quantum dots (QDs) were used to investigate their photoluminescence (PL) response to Hg2+ ions as a function of the surface properties of QDs. Three distinctly-size CdSe/ZnS QDs were obtained by varying the molar ratio of shell precursors, which were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HR-TEM), Fourier-Transform infrared (FT-IR), X-ray photoelectron spectroscopy (XPS), absorption spectroscopy, and time-resolved fluorescence spectroscopy. Results revealed the obtention of zinc blende nanocrystals with sizes ranging from 2.7 to 3.2 nm (± 0.5) and ZnS thickness between 0.3 and 1.0 monolayer (ML). The variation of the [S]/[Zn] molar ratio introduced chemical species that act as traps, affecting the PL properties differently. Depending on the thickness of the shell and chemical speciation on surface, Hg2+ ions could induce quenching or enhancement of PL. Detection of mercury ions was evaluated in terms of Stern-Volmer equation, where the limit of detection (LOD) for the PL quenching system was 11.2 nM, while for the PL enhancing systems were 8.98 nM and 10.7 nM. Results demonstrate the performance of oleic acid-capped CdSe/ZnS QDs to detect Hg2+ and their capacity to turn the PL on/off depending on surface properties.
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Colloidal two-dimensional (2D) nanoplatelets (NPLs) have been extensively studied owing to promising potential in optoelectronic applications. Here, we have reported the preparation of 2D CdSeTe alloy NPLs and investigated their energy and charge transfer with porphyrin molecules. The red shifting in the optical properties suggests the change in the band gaps. Furthermore, the energy and the charge transfer are evident in the composite of CdSeTe alloy NPLs with 5,10,15,20-tetra(4pyridyl)-porphyrin (TpyP) molecules. The quenching in the photoluminescence (PL) spectra and PL decay time supports the energy transfer (~61 % efficiency) and the charge transfer. The thermodynamically feasible hole transfer is evidenced by the band alignment of the alloy NPLs and TpyP molecules, which is further supported by a transient absorption spectroscopy (TAS) study. The TA study found the hole transfer within ~3â ps time scale, proving the effective charge carrier separation for better optoelectronic applications.
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Cation exchange is a versatile method for modifying the material composition and properties of nanostructures. However, control of the degree of exchange and material properties is difficult at the single-particle level. Successive cation exchange from CdSe to Ag2Se has been utilized here on the same individual nanowires to monitor the change of electronic properties in field-effect transistor devices. The transistors were fabricated by direct synthesis of CdSe nanowires on prepatterned substrates followed by optical lithography. The devices were then subjected to cation exchange by submerging them in an exchange solution containing silver nitrate. By removal of the devices from solution and probing the electrical transport properties at different times, the change in electronic properties of individual nanowires could be monitored throughout the entire exchange reaction from CdSe to Ag2Se. Transistor characterization revealed that the electrical conductivity can be tuned by up to 8 orders of magnitude and the charge-carrier mobility by 7 orders of magnitude. While analysis of the material composition by energy dispersive X-ray spectroscopy confirmed successful cation exchange from CdSe to Ag2Se, X-ray fluorescence spectroscopy proved that cation exchange also took place below the contacts. The method presented here demonstrates an efficient way to tune the material composition and access the resulting properties nondestructively at the single-particle level. This approach can be readily applied to many other material systems and can be used to study the electrical properties of nanostructures as a function of material composition or to optimize nanostructure-based devices after fabrication.
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Owing to the long-lived decay of triplet excited state, extensive efforts have been devoted to efficient triplet generation for applications covering triplet-triplet annihilation for photon upconversion, photocycloaddition and photoredox catalysis. Among the candidates, nanocrystal-molecule complexes have received tremendous attention for triplet generation because of easier spin flip and negligible energy loss during intersystem crossing. However, the triplet energy transfer (TET) from nanocrystals (NCs) to molecules can be very complicated in actual situation due to intricate energy level alignment and inevitable defect states, which often involves various decay pathes of the excited state competing with TET. Understanding the detailed carrier dynamics in such complexes is strongly necessary for related applications. Here, a CdSe-TCA (5-tetracene carboxylic acid) complex with a Type-II like energy level alignment is synthesized through precisely adjusting the dimension of CdSe NC. Based on series of spectral measurements, especially the transient absorption (TA) spectroscopy, the results show various carrier dynamics including hole-transfer-mediated TET, Förster resonance energy transfer (FRET) and carrier trapping. Although the carrier trapping by defect states in CdSe NC is revealed not associated with the TET from CdSe to TCA, the FRET is proved to competing with the TET process. Both the FRET and defect states should be refrained for efficient TET in such complexes. This study could provide further insight for understanding the carrier dynamics competition in NC-molecule complexes for triplet generation and benefit related optoelectronics applications.
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A review of the state of research in the development of conductometric gas sensors based on II-VI semiconductors is given. It was shown that II-VI compounds indeed have properties that are necessary for the development of highly efficient gas sensors. In this case, to achieve the required parameters, all approaches developed for metal oxides can be used. At the same time, during a detailed review, it was concluded that sensors based on II-VI compounds have no prospects for appearing on the gas sensor market. The main obstacle is the instability of the surface state, which leads to poor reproducibility of parameters and drift of sensor characteristics during operation.
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This work reports in situ (active) electrochemical control over the coupling strength between semiconducting nanoplatelets and a plasmonic cavity. We found that by applying a reductive bias to an Al nanoparticle lattice working electrode the number of CdSe nanoplatelet emitters that can couple to the cavity is decreased. Strong coupling can be reversibly recovered by discharging the lattice at oxidative potentials relative to the conduction band edge reduction potential of the emitters. By correlating the number of electrons added or removed with the measured coupling strength, we identified that loss and recovery of strong coupling are likely hindered by side processes that trap and/or inhibit electrons from populating the nanoplatelet conduction band. These findings demonstrate tunable, external control of strong coupling and offer prospects to tune selectivity in chemical reactions.
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Photoexcited charge transfer dynamics in CdSe quantum dots (QDs) coupled with carbazole were explored to model QD-molecule systems for light-harvesting applications. The absorption spectra of QDs with different sizes, i.e., Cd35Se20X30L30 (T1), Cd56Se35X42L42 (T2), and Cd84Se56X56L56 (T3) were simulated with quantum dynamical methods, which qualitatively match the reported experimental spectra. The carbazole is attached with a 3-amino group at the apex position of T1 (namely T1-3A-Cz), establishing proper electronic communication between T1 and carbazole. The spectra of T1-3A-Cz is 0.22 eV red-shifted compared to T1. A time-dependent perturbation was applied in tune with the lowest energy peak (3.63 eV) of T1-3A-Cz to investigate the charge transfer dynamics, which revealed an ultrafast charge separation within the femtosecond time scale. The electronic structure showed a favorable energy alignment between T1 and carbazole in T1-3A-Cz. The LUMO of carbazole was situated below the conduction band of the QD, while the HOMO of carbazole mixed perfectly with the top of the valence band of the QD, developing the interfacial charge transfer states. These states promoted the photoexcited electron transfer directly from the CdSe core to carbazole. A rapid and enhanced charge separation occurred with the laser field strength increasing from 0.001 to 0.005 V/Å. However, T1 connected to the other positions of carbazole did not show charge separation effectively. The photoinduced charge transfer is negligible in the case of T2-carbazole systems due to poor electronic coupling, and it is not observed in T3-carbazole systems. So, the T1-3A-Cz model acts as a perfect donor-acceptor QD-molecule nanocomposite that can harvest photon energy efficiently. Further enhancement of charge transfer can be achieved by coupling more carbazoles to the T1 QD (e.g., T1-3A-Cz2) due to the extension of hole delocalization between T1 and the carbazoles.
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Solution-processed colloidal cadmium chalcogenide nanoplatelets (NPLs)-based photodetectors (PD) are promising materials for next-generation optoelectronic devices due to their excellent optical properties. Here, we report on ultrafast carrier relaxation dynamics of four monolayer (4â ML) Ag-doped CdSe (Ag: CdSe) NPLs using ultrafast transient absorption spectroscopy and their photodetectors applications. A broad dopant emission is observed at around 650â nm with a large FWHM of ~431â meV and band edge emission at 515â nm. The intragap dopant state acts as a hole acceptor, which leads to better charge separation. The ultrafast transient absorption spectroscopy study shows faster carrier recombination dynamics with a hole transfer time scale of ~10â ps in Ag-doped CdSe NPLs. This supports the excited hole capture phenomenon at the dopant state. Ag-doped CdSe NPLs-based PD performed better than undoped CdSe NPLs with detectivity and responsivity values of 1.3×1010 Jones and 2.4â mA/W, respectively.
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Here, strongly orientation-dependent lateral photoconductivity of a CdSe monolayer colloidal quantum wells (CQWs) possessing short-chain ligands is reported. A controlled liquid-air self-assembly technique is utilized to deliberately engineer the alignments of CQWs into either face-down (FO) or edge-up (EO) orientation on the substrate as opposed to randomly oriented (RO) CQWs prepared by spin-coating. Adapting planar configuration metal-semiconductor-metal (MSM) photodetectors, it is found that lateral conductivity spans ≈2 orders of magnitude depending on the orientation of CQWs in the film in the case of utilizing short ligands. The long native ligands of oleic acid (OA) are exchanged with short-chain ligands of 2-ethylhexane-1-thiol (EHT) to reduce the inter-platelet distance, which significantly improved the photoresponsivity from 4.16, 0.58, and 4.79 mA W-1 to 528.7, 6.17, and 94.2 mA W-1, for the MSM devices prepared with RO, FO, and EO, before and after ligands exchange, respectively. Such CQW orientation control profoundly impacts the photodetector performance also in terms of the detection speed (0.061 s/0.074 s for the FO, 0.048 s/0.060 s for the EO compared to 0.10 s/0.16 s for the RO, for the rise and decay time constants, respectively) and the detectivity (1.7 × 1010, 2.3 × 1011, and 7.5 × 1011 Jones for the FO, EO, and RO devices, respectively) which can be further tailored for the desired optoelectronic device applications. Attributed to charge transportation in colloidal films being proportional to the number of hopping steps, these findings indicate that the solution-processed orientation of CQWs provides the ability to tune the photoconductivity of CQWs with short ligands as another degree of freedom to exploit and engineer their absorptive devices.
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This paper reports how CdSe core-only nanoplatelets (NPLs) coupled with plasmonic Al nanoparticle lattices can exhibit exciton-polariton lasing. By improving a procedure to synthesize monodisperse 4-monolayer CdSe NPLs, we could resolve polariton decay dynamics and pathways. Experiment and theory confirmed that the system is in the strong coupling regime based on anticrossings in the dispersion diagrams and magnitude of the Rabi-splitting values. Notably, polariton lasing is observed only for cavity lattice periodicities that exhibit specific dispersive characteristics that enable polariton accumulation. The threshold of polariton lasing is 25-fold lower than the reported photon lasing values from CdSe NPLs in similar cavity designs. This open-cavity platform offers a simple approach to control exciton polaritons anticipated to benefit quantum information processing, optoelectronics, and chemical reactions.
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The spin Hamiltonian parameters and defect structures are theoretically studied for the substitutional Mn2+ at the core of CdSe nanocrystals and in the bulk materials from the perturbation calculations of spin Hamiltonian parameters for trigonal tetrahedral 3d5 clusters. Both the crystal-field and charge transfer contributions are taken into account in the calculations from the cluster approach. The impurity-ligand bond angles are found to be about 1.84° larger and 0.10° smaller in the CdSe:Mn2+ nanocrystals and bulk materials, respectively, than those (≈109.37°) of the host Cd2+ sites. The quantitative criterion of occupation (at the core or surface) for Mn2+ in CdX (X = S, Se, Te) nanocrystals is presented for the first time based on the inequations of hyperfine structure constants (HSCs). This criterion is well supported by the experimental HSCs data of Mn2+ in CdX nanocrystals. The previous assignments of signals SI as Mn2+ at the core of CdS nanocrystals are renewed as Mn2+ at the surface based on the above criterion. The present studies would be helpful to achieve convenient determination of occupation for Mn2+ impurities in CdX semiconductor nanocrystals by means of spectral (e.g., HSCs) analysis.