RESUMEN
The efficiency of copper indium gallium selenide (CIGS) solar cells that use transparent conductive oxide (TCO) as the top electrode decreases significantly as the device area increases owing to the poor electrical properties of TCO. Therefore, high-efficiency, large-area CIGS solar cells require the development of a novel top electrode with high transmittance and conductivity. In this study, a microgrid/TCO hybrid electrode is designed to minimize the optical and resistive losses that may occur in the top electrode of a CIGS solar cell. In addition, the buffer layer of the CIGS solar cells is changed from the conventional CdS buffer to a dry-processed wide-band gap ZnMgO (ZMO) buffer, resulting in increased device efficiency by minimizing parasitic absorption in the short-wavelength region. By optimizing the combination of ZMO buffer and the microgrid/TCO hybrid electrode, a device efficiency of up to 20.5% (with antireflection layers) is achieved over a small device area of 5 mm × 5 mm (total area). Moreover, CIGS solar cells with an increased device area of up to 20 mm × 70 mm (total area) exhibit an efficiency of up to 19.7% (with antireflection layers) when a microgrid/TCO hybrid electrode is applied. Thus, this study demonstrates the potential for high-efficiency, large-area CIGS solar cells with novel microgrid electrodes.
RESUMEN
Zinc sulfide (ZnS) thin films prepared using the chemical bath deposition (CBD) method have demonstrated great viability in various uses, encompassing photonics, field emission devices, field emitters, sensors, electroluminescence devices, optoelectronic devices, and are crucial as buffer layers of solar cells. These semiconducting thin films for industrial and research applications are popular among researchers. CBD appears attractive due to its simplicity, cost-effectiveness, low energy consumption, low-temperature compatibility, and superior uniformity for large-area deposition. However, numerous parameters influence the CBD mechanism and the quality of the thin films. This study offers a comprehensive review of the impact of various parameters that can affect different properties of ZnS films grown on CBD. This paper provides an extensive review of the film growth and structural and optical properties of ZnS thin films influenced by various parameters, which include complexing agents, the concentration ratio of the reactants, stirring speed, humidity, deposition temperature, deposition time, pH value, precursor types, and annealing temperature environments. Various studies screened the key influences on the CBD parameters concerning the quality of the resulting films. This work will motivate researchers to provide additional insight into the preparation of ZnS thin films using CBD to optimize this deposition method to its fullest potential.
RESUMEN
In order to improve the power conversion efficiency (PCE) of Cu(In,Ga)Se2 (CIGS) solar cells, a BaTiO3 (BTO) layer was inserted into the Cu(In,Ga)Se2. The performances of the BTO-coupled CIGS solar cells with structures of Mo/CIGS/CdS/i-ZnO/AZO, Mo/BTO/CIGS/CdS/i-ZnO/AZO, Mo/CIGS/BTO/CdS/i-ZnO/AZO, Mo/CIGS/CdS/BTO/i-ZnO/AZO, Mo/CIGS/BTO/i-ZnO/AZO, Mo/CIGS/CdS/BTO/AZO, and Mo/ CIGS/CdS(5 nm)/BTO(5 nm)/i-ZnO/AZO were systematically studied via the SCAPS-1D software. It was found that the power conversion efficiency (PCE) of a BTO-coupled CIGS solar cell with a device configuration of Mo/CIGS/CdS/BTO/AZO was 24.53%, and its open-circuit voltage was 931.70 mV. The working mechanism for the BTO-coupled CIGS solar cells with different device structures was proposed. Our results provide a novel strategy for improving the PCE of solar cells by combining a ferroelectric material into the p-n junction materials.
RESUMEN
Growth of Cu(In,Ga)Se2 (CIGS) absorbers under Cu-poor conditions gives rise to incorporation of numerous defects into the bulk, whereas the same absorber grown under Cu-rich conditions leads to a stoichiometric bulk with minimum defects. This suggests that CIGS absorbers grown under Cu-rich conditions are more suitable for solar cell applications. However, the CIGS solar cell devices with record efficiencies have all been fabricated under Cu-poor conditions, despite the expectations. Therefore, in the present work, both Cu-poor and Cu-rich CIGS cells are investigated, and the superior properties of the internal interfaces of the Cu-poor CIGS cells, such as the p-n junction and grain boundaries, which always makes them the record-efficiency devices, are shown. More precisely, by employing a correlative microscopy approach, the typical fingerprints for superior properties of internal interfaces necessary for maintaining a lower recombination activity in the cell is discovered. These are a Cu-depleted and Cd-enriched CIGS absorber surface, near the p-n junction, as well as a negative Cu factor (Ƨ) and high Na content (>1.5 at%) at the grain boundaries. Thus, this work provides key factors governing the device performance (efficiency), which can be considered in the design of next-generation solar cells.
RESUMEN
The classical high-temperature synthesis process of Cu(In,Ga)Se2 (CIGS) solar cells limits their applications on high-temperature intolerant substrates. In this study, a novel low-temperature (400 °C) fabrication strategy of CIGS solar cells is reported using the bismuth (Bi)-doping method, and its growth-promoting mechanism is systematically studied. Different concentrations of Bi are incorporated into pure chalcopyrite quaternary target sputtered-CIGS films by controlling the thickness of the Bi layer. Bi induces considerable grain growth improvement, and an average of approximately 3% absolute efficiency enhancement is achieved for Bi-doped solar cells in comparison with the Bi-free samples. Solar cells doped with a 50 nm Bi layer yield the highest efficiency of 13.04% (without any antireflective coating) using the low-temperature technology. The copper-bismuth-selenium compounds (Cu-Bi-Se, mainly Cu1.6Bi4.8Se8) are crucial in improving the crystallinity of absorbers during the annealing process. These Bi-containing compounds are conclusively observed at the grain boundaries and top and bottom interfaces of CIGS films. The growth promotion is found to be associated with the superior diffusion capacity of Cu-Bi-Se compounds in CIGS films, and these liquid compounds function as carriers to facilitate crystallization. Bi atoms do not enter the CIGS lattices, and the band gaps (Eg) of absorbers remain unchanged. Bi doping reduces the number of CIGS grain boundaries and increases the copper vacancy content in CIGS films, thereby boosting the carrier concentrations. Cu-Bi-Se compounds in grain boundaries significantly enhance the conductivity of grain boundaries and serve as channels for carrier transport. The valence band, Fermi energy level (EF), and conduction band of Bi-doped CIGS films all move downward. This band shift strengthens the band bending of the CdS/CIGS heterojunction and eventually improves the open circuit voltage (Voc) of solar cells. An effective doping method and a novel mechanism can facilitate the low-temperature preparation of CIGS solar cells.
RESUMEN
In this paper, we propose an optimized structure of thin Cu(In,Ga)Se2 (CIGS) solar cells with a grating aluminum oxide (Al2O3) passivation layer (GAPL) providing nano-sized contact openings in order to improve power conversion efficiency using optoelectrical simulations. Al2O3 is used as a rear surface passivation material to reduce carrier recombination and improve reflectivity at a rear surface for high efficiency in thin CIGS solar cells. To realize high efficiency for thin CIGS solar cells, the optimized structure was designed by manipulating two structural factors: the contact opening width (COW) and the pitch of the GAPL. Compared with an unpassivated thin CIGS solar cell, the efficiency was improved up to 20.38% when the pitch of the GAPL was 7.5-12.5 µm. Furthermore, the efficiency was improved as the COW of the GAPL was decreased. The maximum efficiency value occurred when the COW was 100 nm because of the effective carrier recombination inhibition and high reflectivity of the Al2O3 insulator passivation with local contacts. These results indicate that the designed structure has optimized structural points for high-efficiency thin CIGS solar cells. Therefore, the photovoltaic (PV) generator and sensor designers can achieve the higher performance of photosensitive thin CIGS solar cells by considering these results.
RESUMEN
Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly waste processing. We replace the toxic chemical bath deposited CdS buffer layer from our Cu(In,Ga)(S,Se)2 (CIGS)-based solar cells with a benign inkjet-printed and annealed Zn(O,S) layer using 230â¯000 times less solvent and 64â¯000 times less chemicals. The wetting and final thickness of the Zn(O,S) layer on the CIGS is controlled by a UV ozone treatment and the drop spacing, whereas the annealing temperature and atmosphere determine the final chemical composition and band gap. The best solar cell using a Zn(O,S) air-annealed layer had an efficiency of 11%, which is similar to the best conventional CdS buffer layer device fabricated in the same batch. Improving the Zn(O,S) wetting and annealing conditions resulted in the best device efficiency of 13.5%, showing the potential of this method.
RESUMEN
Plasma-enhanced atomic layer deposition (PEALD) of TiN thin films were investigated as an effective Se diffusion barrier layer for Cu (In, Ga) Se2 (CIGS) solar cells. Before the deposition of TiN thin film on CIGS solar cells, a saturated growth rate of 0.67 Å/cycle was confirmed using tetrakis(dimethylamido)titanium (TDMAT) and N2 plasma at 200 °C. Then, a Mo (≈30 nm)/PEALD-TiN (≈5 nm)/Mo (≈600 nm) back contact stack was fabricated to investigate the effects of PEALD-TiN thin films on the Se diffusion. After the selenization process, it was revealed that ≈5 nm-thick TiN thin films can effectively block Se diffusion and that only the top Mo layer prepared on the TiN thin films reacted with Se to form a MoSe2 layer. Without the TiN diffusion barrier layer, however, Se continuously diffused along the grain boundaries of the entire Mo back contact electrode. Finally, the adoption of a TiN diffusion barrier layer improved the photovoltaic efficiency of the CIGS solar cell by approximately 10%.
RESUMEN
As an emerging route to further lower the production cost, reducing the thickness of Cu(In,Ga)Se2 (CIGS) absorber has drawn substantial attention and has been intensively studied in recent years. However, thickness-induced change still limits the device performance of thin CIGS solar cells. Herein, by examining a series of submicron CIGS solar cells with varied Cu content through their photovoltaic (PV) performance, the optimal Cu content in these submicron CIGS devices is found to be lower than that of the normal thickness CIGS devices. Electrical and compositional characterizations reveal that reduced thickness makes absorber vulnerable to the shunt paths formed with high Cu content. By intentionally lowering the Cu content in submicron CIGS, shunt resistance (Rsh) of the devices is significantly improved and therefore a high fill factor (FF) is achieved. Moreover, RbF postdeposition treatment (PDT) can passivate the shunt paths in the high Cu content samples to a very good extent, manifesting by the significantly improved FF.
RESUMEN
Zinc oxide films that are prepared by radio frequency (RF) sputtering are widely used as window layers in copper indium gallium diselenide (CIGS) solar cells. To reduce their production cost, the electrodeposition method for preparing Cl-doped zinc oxide (ZnO:Cl), rather than sputtering, was studied. The electrodeposition parameters of injected current density and the pH of the electrolyte solution were studied. A moderate current density was used to yield high quality zinc oxides. The pH of the electrolyte greatly affected the formation of ZnO films. The pH value of the electrolyte that ensured that zinc oxides of high quality are obtained was close to seven. Electrodeposited ZnO:Cl films had higher transmittance than ZnO:Al films in the near-infrared region and so they can be used to improve the performance of solar cells. Our experiments revealed that the CIGS solar cells with electrodeposited ZnO:Cl films as a window layer were slightly more efficient than those with sputtered ZnO:Al films.
RESUMEN
With record cell efficiency of 21.7%, CIGS solar cells have demonstrated to be a very promising photovoltaic (PV) technology. However, their market penetration has been limited due to the inherent high cost of the cells. In this work, to lower the cost of CIGS solar cells, all nonvacuum-processed CIGS solar cells were designed and developed. CIGS absorber was prepared by the annealing of electrodeposited metallic layers in a chalcogen atmosphere. Nonvacuum-deposited Ag nanowires (NWs)/AZO transparent electrodes (TEs) with good transmittance (92.0% at 550 nm) and high conductivity (sheet resistance of 20 Ω/â¡) were used to replace the vacuum-sputtered window layer. Additional thermal treatment after device preparation was conducted at 220 °C for a few of minutes to improve both the value and the uniformity of the efficiency of CIGS pixel cell on 5 × 5 cm substrate. The best performance of the all-nonvacuum-fabricated CIGS solar cells showed an efficiency of 14.05% with Jsc of 34.82 mA/cm(2), Voc of 0.58 V, and FF of 69.60%, respectively, which is comparable with the efficiency of 14.45% of a reference cell using a sputtered window layer.
RESUMEN
We demonstrate an effective room-temperature chemical solution treatment, by using thioacetamide (S treatment) or thioacetamide-InCl3 (In-S treatment) solution, on Cu(In,Ga)Se2 (CIGSe) surface to engineer the ZnS(O,OH)/CIGSe interface and junction quality, leading to enhanced efficiency and minimized metastability of flexible solar cells. The control device without treatment reveals a relatively low efficiency of 8.15%, which is significantly improved to 9.74% by In-S treatment, and 10.39% by S treatment. Results of X-ray photoelectron spectroscopy suggest that S is incorporated into CIGSe surface forming CIGSSe by S treatment, whereas a thin In-S layer is formed on CIGSe surface by In-S treatment with reduced amount of S diffusing into CIGSe. PL spectra and TRPL lifetime further reveal that S incorporation into CIGS surface may substitute the OSe and/or directly occupy the vacant anion site (VSe), resulting in the effective passivation of the recombination centers at CIGSe surface. Moreover, reducing the concentrations of VSe may thereby decrease the density of (VCu-VSe) acceptors, which can minimize the metastability of ZnS(O,OH)/CIGSe solar cells. With S treatment, the light soaking (LS) time of ZnS(O,OH)/CIGSe device is reduced approximately to one-half of control one. Our approach can be potentially applied for alternative Cd-free buffer layers to achieve high efficiency and low metastability.
RESUMEN
Defect control in Cu(In,Ga)Se2 (CIGS) materials, no matter what the defect type or density, is a significant issue, correlating directly to PV performance. These defects act as recombination centers and can be briefly categorized into interface recombination and Shockley-Read-Hall (SRH) recombination, both of which can lead to reduced PV performance. Here, we introduce an electrochemical passivation treatment for CIGS films that can lower the oxygen concentration at the CIGS surface as observed by X-ray photoelectron spectrometer analysis. Temperature-dependent J-V characteristics of CIGS solar cells reveal that interface recombination is suppressed and an improved rollover condition can be achieved following our electrochemical treatment. As a result, the surface defects are passivated, and the power conversion efficiency performance of the solar cell devices can be enhanced from 4.73 to 7.75%.
RESUMEN
This work studies the use of gold (Au) and silver (Ag) nanoparticles in multicrystalline silicon (mc-Si) and copper-indium-gallium-diselenide (CIGS) solar cells. Au and Ag nanoparticles are deposited by spin-coating method, which is a simple and low cost process. The random distribution of nanoparticles by spin coating broadens the resonance wavelength of the transmittance. This broadening favors solar cell applications. Metal shadowing competes with light scattering in a manner that varies with nanoparticle concentration. Experimental results reveal that the mc-Si solar cells that incorporate Au nanoparticles outperform those with Ag nanoparticles. The incorporation of suitable concentration of Au and Ag nanoparticles into mc-Si solar cells increases their efficiency enhancement by 5.6% and 4.8%, respectively. Incorporating Au and Ag nanoparticles into CIGS solar cells improve their efficiency enhancement by 1.2% and 1.4%, respectively. The enhancement of the photocurrent in mc-Si solar cells is lower than that in CIGS solar cells, owing to their different light scattering behaviors and material absorption coefficients.