RESUMEN
During the fabrication of lateral-structured photodetectors based on CH3 NH3 PbI3 film, antisolvents represented by toluene are usually used to accelerate the crystallization of perovskite. Using antisolvent not only leads to the formation of shrinkage holes at the bottom of the perovskite layer, but the toxicity of antisolvents would also hinder the industrial preparation of perovskite devices. An antisolvent-free method is a possible solution to avoid these problems. Here, we report a lateral-structured photodetector based on an antisolvent-free method. The lateral photodetector exhibited a high responsivity of 1.75 Aâ W-1 and specific detectivity (D*) of 3.54 × 1012 Jones. In particular, the results indicated that the solvent had an influence on perovskite film morphology, crystallization, and device performance. The prepared CH3 NH3 PbI3 film presented needle-like crystals and low performance with single precursor solvent N,N-dimethylformamide (DMF). In comparison, appropriate mixing of dimethyl sulfoxide (DMSO) could improve the morphology, crystallization, and performance of the film. In addition, the solvent volume ratio of the precursor had a profound effect on the performance of the as-prepared photodetectors. At a DMSO:DMF volume ratio of 5:5, the as-prepared film had massive perovskite crystals and fewer defects, resulting in optimal device performance, which can be explained by Urbach energy.
RESUMEN
Owning to the unique optical and electronic properties, organic-inorganic hybrid perovskites have made impressive progress in photodetection applications. However, achieving ultrabroadband detection over the ultraviolet (UV) to terahertz (THz) range remains a major challenge for perovskite photodetectors. Here, we report an ultrabroadband (UV-THz) dual-mechanism photodetector based on CH3NH3PbI3 films. The photoresponse of the PD in the UV-visible (vis) and near-infrared (NIR)-THz bands is mainly caused by the photoconductive (PC) effect and bolometric effect, respectively. High responsivities ranging from 105 to 102 mA W-1 are acquired within UV-THz bands under 1 V bias voltage at room temperature. Moreover, the device also shows fast rise and decay times of 76 and 126 ns under 1064 nm laser illumination, respectively. This work provides insight into the thermoelectric characteristics of perovskite and offers a new way to realize ultrabroadband photodetectors notably for THz detector at room temperature.
RESUMEN
Perovskite solar cells (PSCs) are promising low-cost photovoltaic technologies with high power conversion efficiency (PCE). The crystalline quality of perovskite materials is crucial to the photovoltaic performance of the PSCs. Herein, a simple approach is introduced to prepare high-quality CH3NH3PbI3 perovskite films with larger crystalline grains and longer carriers lifetime by using magnetic field to control the nucleation and crystal growth. The fabricated planar CH3NH3PbI3 solar cells have an average PCE of 17.84% and the highest PCE of 18.56% using an optimized magnetic field at 80 mT. In contrast, the PSCs fabricated without the magnetic field give an average PCE of 15.52% and the highest PCE of 16.72%. The magnetic field action produces an ordered arrangement of the perovskite ions, improving the crystallinity of the perovskite films and resulting in a higher PCE.
RESUMEN
Two-step dipping is one of the popular low temperature solution methods to prepare organic-inorganic halide perovskite (CH3NH3PbI3) films for solar cells. However, pinholes in perovskite films fabricated by the static growth method (SGM) result in low power conversion efficiency (PCE) in the resulting solar cells. In this work, the static dipping process is changed into a dynamic dipping process by controlled stirring PbI2 substrates in CH3NH3I isopropanol solution. The dynamic growth method (DGM) produces more nuclei and decreases the pinholes during the nucleation and growth of perovskite crystals. The compact perovskite films with free pinholes are obtained by DGM, which present that the big perovskite particles with a size of 350 nm are surrounded by small perovskite particles with a size of 50 nm. The surface coverage of the perovskite film is up to nearly 100%. Such high quality perovskite film not only eliminated pinholes, resulting in reduced charge recombination of the solar cells, but also improves the light harvesting efficiency. As a result, the PCE of the perovskite solar cells is increased from 11% for SGM to 13% for DGM.