RESUMEN

Beta-phase gallium oxide (ß-Ga2O3) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for next-generation power electronics and deep ultraviolet optoelectronics. Key advantages of ß-Ga2O3 include the availability of large-size single-crystal bulk native substrates produced from melt and the precise control of n-type doping during both bulk growth and thin-film epitaxy. A comprehensive understanding of the fundamental growth processes, control parameters, and underlying mechanisms is essential to enable scalable manufacturing of high-performance epitaxial structures. This review highlights recent advancements in the epitaxial growth of ß-Ga2O3 through various techniques, including Molecular Beam Epitaxy (MBE), Metal-Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), Mist Chemical Vapor Deposition (Mist CVD), Pulsed Laser Deposition (PLD), and Low-Pressure Chemical Vapor Deposition (LPCVD). This review concentrates on the progress of Ga2O3 growth in achieving high growth rates, low defect densities, excellent crystalline quality, and high carrier mobilities through different approaches. It aims to advance the development of device-grade epitaxial Ga2O3 thin films and serves as a crucial resource for researchers and engineers focused on UWBG semiconductors and the future of power electronics.

RESUMEN

Thermally induced dielectric and conductivity properties of an Sn-doped ß-Ga2O3 (-201) single crystal were investigated by frequency-domain impedance spectroscopy in the frequency window from 100 Hz to 1 MHz with temperatures between 293 and 873 K. The (-201) plane-orientated single crystalline nature and the presence of an Sn dopant in ß-Ga2O3 were confirmed by X-ray diffraction (XRD) and X-ray photoelectron (XPS) spectroscopy. Two different trends of impedance spectra have been discussed by the modulation of relaxation times and semiconductor to metallic transition after ∼723 K due to activation of a significant number of Sn dopants and their movements with temperature. The negative impedance values were encountered in the Nyquist plots (Z' vs Z″) after 573 K and constitute a reverse movement after 723 K with temperature. The average normalized change (ΔZ'/Δf)/Z0 of impedance exhibits a broad downward relaxation plateau near 723 K, indicating a weak electrical transition. The increases in the positive value of the dielectric constant (εr') below a percolating threshold temperature 573 K is attributed to the interfacial and dipolar polarizations, and the plasma oscillation of delocalized electrons governed by the Drude theory is responsible for the negative dielectric constant above 573 K. The 3D projections of the real dielectric constant create a sharp downward sinkhole near 723 K, indicating the existence of negative dielectric permittivity. The electrical conductivity dramatically changes its trends after 523 K and confirms a transition from hopping conduction (dielectric or semiconductor) following Jonscher's power law to metallic conduction by Drude theory. Below the percolating threshold temperature, a nonoverlapping small polaron tunneling conduction mechanism was unveiled with defect-induced activation energy of 0.21 eV. The Sn-doped ß-Ga2O3 exhibits unique and tailored electromagnetic responses with temperatures that can be associated with a variety of applications in electromagnetic wave manipulations, cloaking devices, antennas, sensors, medical imaging, seismic wave propagation, etc.

RESUMEN

Two-dimensional (2D) semiconductors have attracted much attention regarding their use in flexible electronic and optoelectronic devices, but the inherent poor electron mobility in conventional 2D materials severely restricts their applications. Using first-principles calculations in conjunction with Boltzmann transport theory, we systematically investigated the Si-doped 2D ß-Ga2O3 structure mediated by biaxial strain, where the structural stabilities were determined by formation energy, phonon spectrum, and ab initio molecular dynamic simulation. Initially, the band gap values of Si-doped 2D ß-Ga2O3 increased slightly, followed by a rapid decrease from 2.46 eV to 1.38 eV accompanied by strain modulations from -8% compressive to +8% tensile, which can be ascribed to the bigger energy elevation of the σ* anti-bonding in the conduction band minimum than that of the π bonding in the valence band maximum. Additionally, band structure calculations resolved a direct-to-indirect transition under the tensile strains. Furthermore, a significantly high electron mobility up to 4911.18 cm2 V-1 s-1 was discovered in Si-doped 2D ß-Ga2O3 as the biaxial tensile strain approached 8%, which originated mainly from the decreased quantum confinement effect on the surface. The electrical conductivity was elevated with the increase in tensile strain and the enhancement of temperature from 300 K to 800 K. Our studies demonstrate the tunable electron mobilities and band structures of Si-doped 2D ß-Ga2O3 using biaxial strain and shed light on its great potential in nanoscale electronics.

RESUMEN

We demonstrate a facile and safe anisotropic gas etching technique for ß-Ga2O3 under atmospheric pressure using forming gas, a H2/N2 gas mixture containing 3.96 vol% H2. This etching gas, being neither explosive nor toxic, can be safely exhausted into the atmosphere, simplifying the etching system setup. Thermodynamic calculations confirm the viability of gas-phase etching above 676°C without the formation of Ga droplets. Experimental verification was achieved by etching ( 1 - 02) ß-Ga2O3 substrates within a temperature range of 700-950°C. Moreover, selective-area etching using this method yielded trenches and fins with vertical and flat sidewalls, defined by (100) facets with the lowest surface energy density, demonstrating significant anisotropic etching capability.

This paper introduces a safe, plasma-free anisotropic etching technique for ß-Ga₂O₃ using non-toxic forming gas, achieving high precision and efficiency in semiconductor processing.

RESUMEN

Beta-gallium oxide (ß-Ga2O3) is emerging as a promising ultrawide band gap (UWBG) semiconductor, which is vital for high-power, high-frequency electronics and deep-UV optoelectronics. It is especially significant for flexible wearable electronics, enabling the fabrication of high-performance Ga2O3-based devices at low temperatures. However, the limited crystallinity and pronounced structural defects arising from the low-temperature deposition of Ga2O3 films significantly restrict the heterojunction interface quality and the relevant electrical performance of Ga2O3-based devices. In this work, cuprous oxide (Cu2O)/Zr-doped ß-Ga2O3 heterojunction diodes are fabricated by magnetron sputtering without intentional substrate heating, followed by an investigation into their microstructure and electrical behaviors. Zr doping can markedly enhance the Ga2O3 crystallinity at low substrate temperatures, transforming the amorphous structure of pristine Ga2O3 films into the crystallized ß phase. Moreover, crystalline ß-Ga2O3 facilitates the epitaxial growth of the Cu2O phase, suppressing the formation of detrimental secondary phase CuO at the heterojunction interface. Benefiting from the high-quality heterojunction interface, the Cu2O/Zr-doped ß-Ga2O3 heterojunction diode exhibits a near-ideal electrical behavior with a low ideality factor of 1.6. The consistent electrical parameters extracted from current-voltage (J-V) and capacitance-voltage (C-V) measurements also confirm the high quality of ß-Ga2O3. This work highlights the potential for the low-temperature production of high-quality ß-Ga2O3-based heterojunction devices through Zr doping.

RESUMEN

In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the ß-Ga2O3 Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabricated to investigate the influence of the relative positions of field plates (FPs) and ion implantation on the device performance. The device with the FP of 15 µm and the ion implantation at the edge of the Schottky electrode exhibited a breakdown voltage (Vbr) of 1616 V, a specific on-resistance (Ron,sp) of 5.11 mΩ·cm2, a power figure of merit (PFOM) of 0.511 GW/cm2, and a reverse current density of 1.2 × 10-5 A/cm2 @ -1000 V. Compared to the control device, although the Ron,sp increased by 1 mΩ·cm2, the Vbr of the device increased by 183% and the PFOM increased by 546.8%. Moreover, the reverse leakage current of the device with the FP and NIET structure decreased by three orders of magnitude. The TCAD simulation revealed that the peak electric field at the interface decreased from 7 MV/cm @ -500 V to 4.18 MV/cm @ -1000 V. These results demonstrate the great potential for the ß-Ga2O3 SBD with a FP and NIET structure in power electronic applications.

RESUMEN

A high-performance planar structure metal-semiconductor-metal-type solar-blind photodetector (SBPD) was fabricated on the basis of (010)-plane ß-Ga2O3 thermally oxidized from nonpolar (110)-plane GaN. A full width at half maximum of 0.486° was achieved for the X-ray rocking curve associated with (020)-plane ß-Ga2O3, which is better than most reported results for the heteroepitaxially grown (-201)-plane ß-Ga2O3. As a result of the relatively high crystalline quality, a dark current as low as 6.30 × 10-12 A was achieved at 5 V, while the photocurrent reached 1.86 × 10-5 A under 254 nm illumination at 600 µW/cm2. As a result, the photo-to-dark current ratio, specific detectivity, responsivity, and external quantum efficiency were calculated to be 2.95 × 106, 2.39 × 1012 Jones, 3.72 A/W, and 1815%, respectively. Moreover, the SBPD showed excellent repeatability and stability in the time-dependent photoresponse characteristics with fast relaxation time constants for the rise and decay processes of only 0.238 and 0.062 s, respectively. This study provides a promising approach to fabricate the device-level (010)-plane ß-Ga2O3 film and a new way for the epitaxial growth of (010)-plane ß-Ga2O3 and (110)-plane GaN as mutual substrates.

RESUMEN

As the most stable phase of gallium oxide, ß-Ga2O3 can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7-4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga's figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type Ga2O3 limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of ß-Ga2O3 power diodes and gives a brief introduction to their thermal management and circuit applications.

RESUMEN

The quest for solar-blind photodetectors (SBPDs) with exceptional optoelectronic properties for imaging applications has prompted the investigation of SBPD arrays. Ga2O3, characterized by its ultrawide bandgap and low growth cost, has emerged as a promising material for solar-blind detection. In this study, SBPD arrays were fabricated by weaving Sn-doped ß-Ga2O3 microbelts (MBs). These MBs, which have a conductive core surrounded by a high-resistivity depletion surface layer resulting from the segregation of Sn and oxygen, are woven into a grid structure. Each intersection of the MBs functions as a photodetector pixel, with the intersecting MBs serving as the output electrodes of the pixel. This design simplifies the readout circuit for the photodetector array. The solar-blind photodetector array demonstrates superior solar-blind detection performance, including a dark current of 0.5 pA, a response time of 38.8 µs, a light/dark current ratio of 108, and a responsivity of 300 A/W. This research may provide a feasible strategy for the fabrication of photodetector arrays, thus pushing forward the application of photodetectors in imaging.

RESUMEN

Monoclinic semiconducting ß-Ga2O3 has drawn attention, particularly because its thin film could be achieved via mechanical exfoliation from bulk crystals, which is analogous to van der Waals materials' behavior. For the transistor devices with exfoliated ß-Ga2O3, the channel direction becomes [010] for in-plane electron transport, which changes to vertical [100] near the source/drain (S/D) contact. Hence, anisotropic transport behavior is certainly worth to study but rarely reported. Here we achieve the vertical [100] direction electron mobility of 4.18 cm2/(V s) from Pt/ß-Ga2O3 Schottky diodes with various thickness via radio frequency-transmission line method (RF-TLM), which is recently developed. The specific contact resistivity (ρc) could also be estimated from RF-TLM, to be 4.72 × 10-5 Ω cm2, which is quite similar to the value (5.25 × 10-5 Ω cm2) from conventional TLM proving the validity of RF-TLM. We also fabricate metal-semiconductor field-effect transistors (MESFETs) to study anisotropic transport behavior and contact resistance (RC). RC-free [010] in-plane mobility appears as high as maximum ∼67 cm2/(V s), extracted from total resistance in MESFETs.

RESUMEN

The integration of graphene with semiconductor materials has been studied for developing advanced electronic and optoelectronic devices. Here, we propose ultrahigh photoresponsivity of ß-Ga2O3 photodiodes with a graphene monolayer inserted in a W Schottky contact. After inserting the graphene monolayer, we found a reduction in the leakage current and ideality factor. The Schottky barrier height was also shown to be about 0.53 eV, which is close to an ideal value. This was attributed to a decrease in the interfacial state density and the strong suppression of metal Fermi-level pinning. Based on a W/graphene/ß-Ga2O3 structure, the responsivity and external quantum efficiency reached 14.49 A/W and 7044%, respectively. These values were over 100 times greater than those of the W contact alone. The rise and delay times of the W/graphene/ß-Ga2O3 Schottky barrier photodiodes significantly decreased to 139 and 200 ms, respectively, compared to those obtained without a graphene interlayer (2000 and 3000 ms). In addition, the W/graphene/ß-Ga2O3 Schottky barrier photodiode was highly stable, even at 150 °C.

RESUMEN

Wearable and flexible ß-Ga2O3-based semiconductor devices have attracted considerable attention, due to their outstanding performance and potential application in real-time optoelectronic monitoring and sensing. However, the unavailability of high-quality crystalline and flexible ß-Ga2O3 membranes limits the fabrication of relevant devices. Here, through lattice epitaxy engineering together with the freestanding method, we demonstrate the preparation of a robust bending-resistant and crystalline ß-Ga2O3 (-201) membrane. Based on this, we fabricate a flexible ß-Ga2O3 photodetector device that shows comparable performance in photocurrent responsivity and spectral selectivity to conventional rigid ß-Ga2O3 film-based devices. Moreover, based on the transferred ß-Ga2O3 membrane on a silicon wafer, the PEDOT:PSS/ß-Ga2O3 p-n heterojunction device with self-powered characteristic was constructed, further demonstrating its superior heterogeneous integration ability with other functional materials. Our results not only demonstrate the feasibility of obtaining a high-quality crystalline and flexible ß-Ga2O3 membrane for an integrated device but also provide a pathway to realize flexible optical and electronic applications for other semiconducting materials.

RESUMEN

In this work, we investigate the growth of monoclinic ß-(InxGa1-x)2O3 alloys on top of (010) ß-Ga2O3 substrates via plasma-assisted molecular beam epitaxy. In particular, using different in situ (reflection high-energy electron diffraction) and ex situ (atomic force microscopy, X-ray diffraction, time-of-flight secondary ion mass spectrometry, and transmission electron microscopy) characterization techniques, we discuss (i) the growth parameters that allow for In incorporation and (ii) the obtainable structural quality of the deposited layers as a function of the alloy composition. In particular, we give experimental evidence of the possibility of coherently growing (010) ß-(InxGa1-x)2O3 layers on ß-Ga2O3 with good structural quality for x up to ≈ 0.1. Moreover, we show that the monoclinic structure of the underlying (010) ß-Ga2O3 substrate can be preserved in the ß-(InxGa1-x)2O3 layers for wider concentrations of In (x ≤ 0.19). Nonetheless, the formation of a large amount of structural defects, like unexpected (102̅) oriented twin domains and partial segregation of In is suggested for x > 0.1. Strain relaxes anisotropically, maintaining an elastically strained unit cell along the a* direction vs plastic relaxation along the c* direction. This study provides important guidelines for the low-end side tunability of the energy bandgap of ß-Ga2O3-based alloys and provides an estimate of its potential in increasing the confined carrier concentration of two-dimensional electron gases in ß-(InxGa1-x)2O3/(AlyGa1-y)2O3 heterostructures.

RESUMEN

Self-powered ultraviolet (UV) photodetectors (PDs) are critical for future energy-efficient optoelectronic systems due to their low energy consumption and high sensitivity. In this paper, the vertically alignedß-Ga2O3nanotube arrays (NTs) have been prepared on GaN/sapphire substrate by the thermal oxidation process combined with the dry etching technology, and applied in the UV photoelectrochemical photodetectors (PEC-PDs) for the first time. Based on the large specific surface area ofß-Ga2O3NTs on GaN/sapphire substrates and the solid/liquid heterojunction, the PEC-PDs exhibit excellent self-powered characteristics under 255 nm (UVA) and 365 nm (UVC) light illumination. Under 255 nm (365 nm) light illumination, the maximum responsivity of 49.9 mA W-1(32.04 mA W-1) and a high detectivity of 1.58 × 1011Jones (1.01 × 1011Jones) were achieved for theß-Ga2O3NTs photodetectors at 0 V bias. In addition, the device shows a fast rise/decay time of 8/4 ms (4/2 ms), which is superior to the level of the previously reported self-powered UV PEC-PDs. This high-performance PEC-PD has potential applications in next-generation low-energy UV detection systems.

RESUMEN

Field-emission nanodiodes with air-gap channels based on single ß-Ga2O3 nanowires have been investigated in this work. With a gap of ∼50 nm and an asymmetric device structure, the proposed nanodiode achieves good diode characteristics through field emission in air at room temperature. Measurement results show that the nanodiode exhibits an ultrahigh emission current density, a high enhancement factor of >2300, and a low turn-on voltage of 0.46 V. More impressively, the emission current almost keeps constant over a wide range (8 orders of magnitude) of air pressures below 1 atm. Meanwhile, the fluctuation in field-emission current is below 8.7% during long-time monitoring, which is better than the best reported field-emission device based on ß-Ga2O3 nanostructures. All of these results indicate that ß-Ga2O3 air-gapped nanodiodes are promising candidates for vacuum electronics that can also operate in air.

RESUMEN

Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizingß-Ga2O3via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesizedß-Ga2O3was fabricated as thin film transistors (TFT). Theß-Ga2O3TFT fabricated exhibits remarkable electron mobility (1.28 cm2Vs-1) and a good current ratio (Ion/Ioff) of 2.06 × 105. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene inß-Ga2O3TFT devices, increasing the electrical device mobility by ∼8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that theß-Ga2O3networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.

RESUMEN

In this paper, we present the results of experiments on samples of ß-Ga2O3 single crystals under a project aimed at assessing and improving the scintillation performance of this material by studying scintillation and radioluminescence mechanism and its limitations. In addition to standard experiments, such as scintillation light yields and time profiles, radio-, and thermoluminescence, we developed and tested a new and promising two-beam experiment, in which a sample is excited by an X-ray beam and additionally stimulated by an IR laser diode. Fe and Mg doping compensate for the inherent n-type conductivity of ß-Ga2O3 to obtain semi-insulating single crystals for large-area substrates and wafers. At the same time, residual Fe and Ir are ubiquitous uncontrolled impurities leached from the Ir crucibles used to grow large bulk crystals by the Czochralski method. For these experiments, we selected four samples cut from the Czochralski grown 2-cm diameter ß-Ga2O3 single crystal boules; one with a reduced Fe content, two unintentionally Fe- and Ir-doped (UID) with lower and higher Fe content, and one doped with Mg. We find that steady-state radioluminescence spectra measured at temperatures between 10 and 350 K are dominated by the UV emission peaking at about 350-370 nm. Unfortunately, even for the best sample with a reduced Fe-content, the intensity of this emission drops precipitously with the temperature down to about 10 % at 300 K. From the two-beam experiments, we conclude that recombination via inadvertent Fe impurity involving three charge states (2+, 3+, and 4+) may reduce a steady-state UV emission of ß-Ga2O3 under X-ray excitation by as much as 60-70 %, one-third to one-half of which is due to the recombination (specific for Fe-doped ß-Ga2O3) involving the 4+ and 3+ charge states of Fe and the remaining 50-70 % being due to a more familiar route typical of other oxides, involving the 2+ and 3+ charge states of Fe. These losses are at higher temperatures enhanced by a thermally activated redistribution of self-trapped holes (STHs). In addition, the trapping of electrons by Fe and holes by Mg, Fe, and Ir may be responsible for scintillation light loss and reduction of the zero-time amplitude essential for the fast timing scintillation applications. Despite indirect evidence of competitive recombination in ß-Ga2O3 involving a deep Ir3+/4+ donor level, we could not quantitatively assess losses of the UV steady state radioluminescence light due to the inadvertent Ir impurity.

RESUMEN

The synthesis of ß-Ga2O3 ceramic was achieved using high-energy electron beams for the first time. The irradiation of gallium oxide powder in a copper crucible using a 1.4 MeV electron beam resulted in a monolithic ceramic structure, eliminating powder particles and imperfections. The synthesized ß-Ga2O3 ceramic exhibited a close-to-ideal composition of O/Ga in a 3:2 ratio. X-ray diffraction analysis confirmed a monoclinic structure (space group C2/m) that matched the reference diagram before and after annealing. Photoluminescence spectra revealed multiple luminescence peaks at blue (~2.7 eV) and UV (3.3, 3.4, 3.8 eV) wavelengths for the synthesized ceramic and commercial crystals. Raman spectroscopy confirmed the bonding modes in the synthesized ceramic. The electron beam-assisted method offers a rapid and cost-effective approach for ß-Ga2O3 ceramic production without requiring additional equipment or complex manipulations. This method holds promise for fabricating refractory ceramics with high melting points, both doped and undoped.

RESUMEN

Gallium oxide (Ga2O3) possesses a band gap of approximately 4.9 eV, aligning its detection wavelength within the solar-blind region, making it an ideal semiconductor material for solar-blind photodetectors. This study aims to enhance the performance of Ga2O3ultraviolet (UV) detectors by pre-depositing a Ga2O3seed layer on ac-plane sapphire substrate. The x-ray diffraction and x-ray photoelectron spectroscopy analyses validated that the deposited films, following high-temperature annealing, comprisedß-Ga2O3. Comparing samples with and without a 20 nm seed layer, it was found that the former exhibited fewer oxygen defects and substantially improved crystal quality. The incorporation of the seed layer led to the realization of detectors with remarkably low dark current (≤15.3 fA). Moreover, the photo-to-dark current ratio was enhanced by 30% (surpassing 1.3 × 104) and the response/recovery time reduced to 0.9 s/0.01 s, indicating faster performance. Furthermore, these detectors demonstrated higher responsivity (4.8 mA W-1), improved detectivity (2.49 × 1016Jones), and excellent solar-blind characteristics. This study serves as a foundational stepping toward achieving high-qualityß-Ga2O3thin film and UV detector arrays.

RESUMEN

ß-Ga2O3 nanostructures are attractive wide-band-gap semiconductor materials as they exhibit promising photoelectric properties and potential applications. Despite the extensive efforts on ß-Ga2O3 nanowires, investigations into ß-Ga2O3 nanotubes are rare since the tubular structures are hard to synthesize. In this paper, we report a facile method for fabricating ß-Ga2O3 nanotubes using pre-synthesized GaSb nanowires as sacrificial templates. Through a two-step heating-treatment strategy, the GaSb nanowires are partially oxidized to form ß-Ga2O3 shells, and then, the residual inner parts are removed subsequently in vacuum conditions, yielding delicate hollow ß-Ga2O3 nanotubes. The length, diameter, and thickness of the nanotubes can be customized by using different GaSb nanowires and heating parameters. In situ transmission electron microscopic heating experiments are performed to reveal the transformation dynamics of the ß-Ga2O3 nanotubes, while the Kirkendall effect and the sublimation process are found to be critical. Moreover, photoelectric tests are carried out on the obtained ß-Ga2O3 nanotubes. A photoresponsivity of ~25.9 A/W and a detectivity of ~5.6 × 1011 Jones have been achieved with a single-ß-Ga2O3-nanotube device under an excitation wavelength of 254 nm.