RESUMEN

The effects of geometrical imperfections in electron-optical components are usually evaluated in 3D simulations. These calculations inherently take a long time, require a large amount of memory, and do not directly produce the necessary axial field functions. We present a 2D perturbation method to calculate parasitic fields in misaligned multipole systems. Our method is based on finding an equivalent potential perturbation, similarly to Sturrock's method, but does not rely on the potential being differentiable. The method is directly applicable to both electrostatic and non-saturated magnetic problems. It does not require any 3D data and it is fully compatible with existing finite element method codes such as EOD. The proposed method produces axial field functions with an accuracy of units to a few tens of percents, depending on the number of unperturbed multipole field components used and the geometry. The results can then be used, for instance, to determine the parasitic imaging aberrations of the misaligned optical system using standard methods, in order to evaluate the effect of mechanical design tolerances.

RESUMEN

Standard 3D interpolation polynomials often suffer from numerical errors of the calculated field and lack of node points in the 3D solution. We introduce a novel method for accurate and smooth interpolation of arbitrary electromagnetic fields in the vicinity of the optical axis valid up to 90% of the bore radius. Our method combines Fourier analysis and Gaussian wavelet interpolation and provides the axial multipole field functions and their derivatives analytically. The results are accurate and noiseless, usually up to the 5th derivative. This is very advantageous for further applications, such as accurate particle tracing, and evaluation of aberration coefficients and other optical properties. The proposed method also enables studying the strength and orientation of all multipole field components. To illustrate the capabilities of the proposed algorithm, we present three examples: a magnetic lens with a hole in the polepiece, a saturated magnetic lens with an elliptic polepiece, and an electrostatic 8-electrode multipole.

RESUMEN

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20-200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm(2)). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 °C) than in conventional metalorganic chemical vapor deposition technologies (≈1000 °C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

RESUMEN

Colloidal gold nanoparticles represent technological building blocks which are easy to fabricate while keeping full control of their shape and dimensions. Here, we report on a simple two-step maskless process to assemble gold nanoparticles from a water colloidal solution at specific sites of a silicon surface. First, the silicon substrate covered by native oxide is exposed to a charged particle beam (ions or electrons) and then immersed in a HF-modified solution of colloidal nanoparticles. The irradiation of the native oxide layer by a low-fluence charged particle beam causes changes in the type of surface-terminating groups, while the large fluences induce even more profound modification of surface composition. Hence, by a proper selection of the initial substrate termination, solution pH, and beam fluence, either positive or negative deposition of the colloidal nanoparticles can be achieved.

Asunto(s)

RESUMEN

The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (≈10(1) eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10(1) eV and 10(1) nA/cm(2), respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions.