RESUMEN
The conversion efficiency of a 90 fs high-power laser pulse focused onto a solid target into x-ray Kalpha line emission was measured. By using three different elements as target material (Si, Ti, and Co), interesting candidates for fast x-ray diffraction applications were selected. The Kalpha output was measured with toroidally bent crystal monochromators combined with a GaAsP Schottky diode. Optimization was performed for different laser intensities as well as for different density scale lengths of a preformed plasma. These different scale lengths were realized by prepulses of different intensities and delay times with respect to the main pulse. Whereas the Kalpha yield varied by a factor of 1.8 for different laser intensities, the variation of the density scale length could provide a gain factor up to 4.6 for the Kalpha output.
RESUMEN
Ultrashort bursts of silicon K alpha x-ray radiation from femtosecond-laser-produced plasmas have been generated. A cross-correlation measurement employing a laser-triggered ultrafast structural change of a CdTe crystal layer (320 nm) shows a K alpha pulse duration between 200 fs and 640 fs. This result is corroborated by particle in cell simulations combined with a Monte-Carlo electron stopping code and calculations on the structural changes of the crystal lattice.