RESUMEN

BACKGROUND: This study aims to assess the psychological effect of comprehensive nursing intervention (CNI) in elderly patients with perforated peptic ulcer (PPU). METHODS: This protocol will search all potential studies from inception to the present in electronic database sources (Cochrane Library, PUBMED, EMBASE, PsycINFO, WANGFANG, CBM, and CNKI), and other sources (such as clinical trial registry, and conference proceedings). We will not apply limitations to language and publication status. Two independent authors will scan literature, extract data, and appraise study quality. A third author will be invited to solve any disagreements between 2 authors. We will utilize RevMan 5.3 software for statistical analysis. If necessary, we will also carry out subgroup group, sensitivity analysis, and reporting bias. RESULTS: This protocol will summarize high quality evidence to evaluate the psychological effect of CNI in elderly patients with PPU. CONCLUSION: The results of this study may provide evidence to determine whether CNI is effective or not on psychological effect in elderly patients with PPU. STUDY REGISTRATION: INPLASY202080069.

Asunto(s)

Úlcera Péptica Perforada/enfermería , Anciano , Humanos , Úlcera Péptica Perforada/complicaciones , Úlcera Péptica Perforada/psicología , Calidad de Vida , Revisiones Sistemáticas como Asunto

RESUMEN

This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN layer for investigating the strain-controlled recombination mechanism in the system. PL results turned out that tensile stress released samples had better PL performances as their external quantum efficiencies increased to 17%, 7 times larger than the one of regular sample. Detail analysis confirmed they had smaller nonradiative recombination rates ((2.5~2.8)×10-2 s-1 compared to (3.6~4.7)× 10-2 s-1), which was associated with the better crystalline quality and absence of dislocations or cracks. Furthermore, their radiative recombination rates were found more stable and were much higher ((5.7~5.8) ×10-3 s-1 compared to [9~7] ×10-4 s-1) at room temperature. This was ascribed to the suppression of shallow localized states on MQW interfaces, leaving the deep radiative localization centers inside InGaN layers dominating the radiative recombination.