RESUMEN
Bovine infectious rhinotracheitis (IBR), caused by bovine alphaherpesvirus 1 (BoAHV1), poses significant challenges to the global cattle industry due to its high contagiousness and economic impact. In our study, we successfully isolated a BoAHV1 strain from suspected infected bovine nasal mucus samples in Yanji city, revealing genetic similarities with strains from Sichuan, Egypt, and the USA, while strains from Xinjiang, Beijing, Hebei, and Inner Mongolia showed more distant associations, indicating potential cross-border transmission. Additionally, our investigation of BoAHV1 infection dynamics within host cells revealed early upregulation of gB, which is critical for sustained infection, while the expression of gC and gD showed variations compared to previous studies. These findings enhance our understanding of BoAHV1 diversity and infection kinetics, underscoring the importance of international collaboration for effective surveillance and control strategies. Furthermore, they lay the groundwork for the development of targeted therapeutics and vaccines to mitigate the impact of IBR on the cattle industry.
RESUMEN
The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III-V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial III-nitride films from their substrates. This method builds on a nanoepitaxial lateral overgrowth (NELO) process that provides III-Nitride films with low dislocation densities. NELO is accomplished using a nanoporous mask layer patterned on GaN substrates. Chemical removal of the SiO2 layer after growth of III-Nitride overlayers causes fracture at the interface between the GaN film and the original GaN substrate, resulting in free-standing GaN films with nanostructured surfaces on one side. These layers can be transferred to other substrates, and the nano-structured surface can be used in photonic devices, or planarized for power devices.
RESUMEN
Dense, crystalline arrays of InGaN nanorings, nanodots, and nanoarrows have been fabricated on GaN substrates by template-assisted nano-area selective growth. To create the nanostructures, we have used nanoporous anodic alumina films as templates to pattern nanopores in an SiO2 transfer layer, and then used this patterned SiO2 layer as a template for nitride growth by metalorganic chemical vapor deposition. We have varied the diameter of the deposited nitride nanostructures from 35 to 250 nm by changing the initial anodic alumina template structure. In addition, by controlling the nitride growth time we have created various types of nanostructures, from nanorings to nanoarrows. This structural evolution begins with the nucleation and formation of a nanoring structure, followed by coalescence and growth to form faceted nanodots, and finally lateral overgrowth to form faceted nanoarrows.