1.
Sensors (Basel)
; 17(12)2017 Dec 05.
Artículo
en Inglés
| MEDLINE
| ID: mdl-29206162
RESUMEN
A submicron pixel's light and dark performance were studied by experiment and simulation. An advanced node technology incorporated with a stacked CMOS image sensor (CIS) is promising in that it may enhance performance. In this work, we demonstrated a low dark current of 3.2 e-/s at 60 °C, an ultra-low read noise of 0.90 e-·rms, a high full well capacity (FWC) of 4100 e-, and blooming of 0.5% in 0.9 µm pixels with a pixel supply voltage of 2.8 V. In addition, the simulation study result of 0.8 µm pixels is discussed.