RESUMEN
The epidermis of swollen storage roots in purple cultivars of turnip "Tsuda" (Brassica rapa) accumulates anthocyanin in a light-dependent manner, especially in response to UV-A light, of which the mechanism is unclear. In this study, we mutagenized 15,000 seeds by 0.5% (v/v) ethyl methane sulfonate (EMS) and obtained 14 mutants with abnormal anthocyanin production in their epidermis of swollen storage roots. These mutants were classified into two groups: the red mutants with constitutive anthocyanin accumulation in their epidermis of storage roots even in underground parts in darkness and the white mutants without anthocyanin accumulation in the epidermis of storage roots in aboveground parts exposed to sunlight. Test cross analysis demonstrated that w9, w68, w204, r15, r21, r30 and r57 contained different mutations responsible for their phenotypic variations. Further genetic analysis of four target mutants (w9, w68, w204 and r15) indicated that each of them was controlled by a different recessive gene. Intriguingly, the expression profiles of anthocyanin biosynthesis genes, including structural and regulatory genes, coincided with their anthocyanin levels in the epidermis of storage roots in the four target mutants. We proposed that potential genes responsible for the mutations should be upstream factors of the anthocyanin biosynthesis pathway in turnips, which provided resources to further investigate the mechanisms of light-induced anthocyanin accumulation.
Asunto(s)
Antocianinas/genética , Vías Biosintéticas , Brassica rapa/genética , Mutación , Antocianinas/metabolismo , Brassica rapa/metabolismo , Brassica rapa/efectos de la radiación , Metanosulfonato de Etilo/metabolismo , Regulación de la Expresión Génica de las Plantas , Genes de Plantas , Mutagénesis , Mutágenos/metabolismo , Raíces de Plantas/genética , Raíces de Plantas/metabolismo , Semillas/genética , Semillas/metabolismo , Luz Solar , Rayos UltravioletaRESUMEN
The performance of a diode-end-pumped passively Q-switched dual-wavelength Nd:GGG laser operating at 932.9 and 936.5 nm with V(3+):YAG as the saturable absorber was demonstrated for the first time to the best of our knowledge. The maximum dual-wavelength average output power of 150 mW was achieved with a T = 2% output coupler under the absorbed pump power of 2.55 W, corresponding to the optical-to-optical conversion and slope efficiency of 5.9% and 8.0%, respectively. The minimum pulse width was 395 ns with the pulse repetition frequency of 140 kHz, which was attained with a T = 5% output coupler under the absorbed pump power of 2.55 W.
Asunto(s)
Láseres de Estado Sólido , Refractometría/instrumentación , Diseño de Equipo , Análisis de Falla de EquipoRESUMEN
The performance of a diode-pumped passively Q-switched Nd:Gd(0.5)Y(0.5)VO(4) laser at 1.34 microm with V(3+):YAG as the saturable absorber was demonstrated for the first time to the best of our knowledge. The focal lengths of thermal lens in the diode-end-pumped Nd:Gd(0.5)Y(0.5)VO(4) laser for the 1.34 microm transition was experimentally investigated, with the corresponding proportion constant estimated to be approximately1.5x10(4) W/mm. For the passive Q-switching operation, the maximum average output power of 0.96 W was achieved under the pump power of 7.28 W, corresponding to optical-to-optical conversion and slope efficiency of 13.2% and 17.6%, respectively. The minimum pulse width attained was 47.8 ns with the pulse repetition frequency of 76 kHz, with the single pulse energy and peak power estimated to be 8.7 microJ and 182 W, respectively.